MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600HG-90H ● IC .................................................................. 600 A ● VCES ...................................................... 4500 V ● High Insulated Type ● 1-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 ±0.5 (4) (2) C C E (3) E (1) 4-M8 NUTS 57 ±0.25 17 ±0.1 57 ±0.25 4 2 3 1 9 ±0.1 >PET+PBT< E >PET+PBT< G 28.5 ±0.5 42.5 ±0.5 41 ±0.5 61.2 ±0.5 18 ±0.3 screwing depth min. 7.7 16.5 ±0.3 screwing depth min. 16.5 5 ±0.15 +1.0 0 LABEL 38 40.4 ±0.5 6-φ7 MOUNTING HOLES 30.7 ±0.5 +1.0 0 3-M4 NUTS C 48 CIRCUIT DIAGRAM 22 ±0.3 140 ±0.5 G E 124 ±0.25 44 ±0.3 C HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 1 MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Note 2) Conditions VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C DC, Tc = 100°C Pulse DC Pulse Tc = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Ratings 4500 ± 20 600 1200 600 1200 7500 10200 5100 –40 ~ +150 –40 ~ +125 –40 ~ +125 10 (Note 1) (Note 1) Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VCC = 3200V, VCE ≤ VCES, VGE = 15V, Tj = 125°C Unit V V A A A A W V V °C °C °C µs ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25°C Tj = 125°C ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) IGES Cies Coes Cres Qg Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Turn-on delay time Turn-on rise time Turn-on switching energy (Note 5) Turn-off delay time Turn-off fall time Turn-off switching energy (Note 5) Emitter-collector voltage (Note 2) Reverse recovery time (Note 2) Reverse recovery charge (Note 2) Reverse recovery energy (Note 2), (Note 5) VCE = 10 V, IC = 60 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCE(sat) td(on) tr Eon(10%) td(off) tf Eoff(10%) VEC trr Qrr Erec(10%) VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C VCC = 2250 V, IC = 600 A, VGE = ±15 V, Tj = 25°C IC = 600 A (Note 4) Tj = 25°C VGE = 15 V Tj = 125°C VCC = 2250 V, IC = 600 A, VGE = ±15 V RG = 15 Ω, Tj = 125°C, Ls = 120 nH Inductive load VCC = 2250 V, IC = 600 A, VGE = ±15 V RG = 15 Ω, Tj = 125°C, Ls = 120 nH Inductive load IE = 600 A VGE = 0 V (Note 4) VCC = 2250 V, IE = 600 A, VGE = ±15 V RG = 15 Ω, Tj = 125°C, Ls = 120 nH Inductive load Tj = 25°C Tj = 125°C Min — — 5.0 — — — — — — — — — Limits Typ — 8 6.0 — 108 8 2.4 10 3.45 3.70 — — Max 3.5 35 7.0 0.5 — — — — — — 2.40 1.20 — 2.80 — J/P — — — — 6.00 1.20 µs µs — 1.70 — J/P — — 4.80 4.15 — — V — — 1.80 µs — 610 — µC — 0.67 — J/P Unit mA V µA nF nF nF µC V µs µs HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 2 MITSUBISHI HVIGBT MODULES CM600HG-90H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm Min — — — Limits Typ — — 9.0 Max 16.5 33.0 — Min 7.0 3.0 1.0 — 600 26 56 — — Limits Typ — — — 1.00 — — — 27 0.19 Max 15.0 6.0 3.0 — — — — — — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC’+EE’ Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance Conditions M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw Tc = 25°C Unit N·m N·m N·m kg — mm mm nH mΩ Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 3 MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 1200 1200 VCE = 20V Tj = 125°C VGE = 20V 1000 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) 1000 VGE = 15V 800 VGE = 12V VGE = 10V 600 VGE = 8V 400 200 800 600 400 200 Tj = 25°C Tj = 125°C 0 0 1 2 3 4 5 0 6 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 1200 12 10 1200 VGE = 15V 1000 EMITTER CURRENT (A) COLLECTOR CURRENT (A) 1000 800 600 400 200 800 600 400 200 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 0 0 1 2 3 4 5 0 6 COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0 1 2 3 4 5 6 7 8 EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 4 MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 7 5 VCE = 2250V, IC = 600A Tj = 25°C 3 2 15 CAPACITANCE (nF) GATE-EMITTER VOLTAGE (V) Cies 102 7 5 3 2 101 7 5 3 2 Coes 100 Cres 7 5 3 2 2 3 5 7 100 2 3 5 0 -5 -10 VGE = 0V, Tj = 25°C f = 100kHz 10-1 -1 10 10 5 7 101 2 3 -15 5 7 102 0 5 10 15 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 8 10 VCC = 2250V, IC = 600A VGE = ±15V, Tj = 125°C Inductive load VCC = 2250V, VGE = ±15V RG = 15Ω, Tj = 125°C Inductive load SWITCHING ENERGIES (J/P) SWITCHING ENERGIES (J/P) 8 6 Eon 4 Eoff 2 Eon 6 4 Eoff 2 Erec 0 0 500 1000 Erec 0 1500 0 10 20 30 40 50 60 GATE RESISTOR (Ω) COLLECTOR CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 5 MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 102 VCC = 2250V, VGE = ±15V RG = 15Ω, Tj = 125°C Inductive load 7 5 REVERSE RECOVERY TIME (µs) 3 SWITCHING TIMES (µs) 2 101 7 5 td(off) tf 3 2 td(on) 100 104 VCC = 2250V, VGE = ±15V RG = 15Ω, Tj = 125°C Inductive load 7 5 3 3 2 2 101 103 lrr 7 5 7 5 3 3 2 2 trr 100 102 7 5 7 5 3 3 3 2 2 2 7 5 tr 10-1 1 10 2 3 4 5 7 102 2 3 4 5 7 103 10-1 1 10 2 3 4 5 7 104 2 3 4 5 7 102 REVERSE RECOVERY CURRENT (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101 2 3 4 5 7 103 2 3 4 5 7 104 EMITTER CURRENT (A) COLLECTOR CURRENT (A) 1.2 Rth(j–c)Q = 16.5K/kW Rth(j–c)R = 33.0K/kW 1.0 n 0.8 Z th( j –c ) ( t ) = 0.6 0.4 Ri 1–exp Σ i=1 NORMALIZED TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS – t ti 1 2 3 4 Ri [K/kW] 0.0059 0.0978 0.6571 0.2392 τ i [sec] 0.0002 0.0074 0.0732 0.4488 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 6 MITSUBISHI HVIGBT MODULES CM600HG-90H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 8000 1500 VCC ≤ 3200V, VGE = ±15V Tj = 125°C, RG ≥ 15Ω VCC ≤ 3200V, VGE = ±15V Tj = 125°C, RG ≥ 15Ω COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) HIGH POWER SWITCHING USE INSULATED TYPE 1000 500 0 1000 2000 3000 4000 6000 4000 2000 0 5000 COLLECTOR-EMITTER VOLTAGE (V) 0 1000 2000 3000 4000 5000 COLLECTOR-EMITTER VOLTAGE (V) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE RECOVERY CURRENT (A) 1500 VCC ≤ 3200V, di/dt ≤ 2200A/µs Tj = 125°C 1000 500 0 0 1000 2000 3000 4000 5000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 7