IRF IRF7105QTRPBF Advanced process technology Datasheet

PD - 96102B
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IRF7105QPbF
HEXFET® Power MOSFET
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Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S1
N-CHANNEL MOSFET
1
8
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
N-Ch
P-Ch
VDSS
25V
-25V
RDS(on)
0.10Ω
0.25Ω
ID
3.5A
-2.3A
D1
P-CHANNEL MOSFET
Top View
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the
lastest processing techniques to achieve extremely low on-resistance
per silicon area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
IRF7105QPbF
Standard Pack
Package
Type
Form
Quantity
IRF7105QTRPbF
SO-8
Tape and Reel
IRF7105QPbF
SO-8
Tube
Base part number Orderable part number
SO-8
EOL Notice
Replacement Part Number
4000
EOL 527
95
EOL 529
Please search the EOL part number on IR’s
website for guidance
Absolute Maximum Ratings
Parameter
I D @ TA = 25°C
I D @ TA = 70°C
IDM
P D @TC = 25°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
3.5
2.8
14
-2.3
-1.8
-10
A
2.0
0.016
± 20
3.0
Units
W
W/°C
V
V/nS
°C
-3.0
-55 to + 150
Thermal Resistance Ratings
Parameter
RθJA
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Maximum Junction-to-Ambient
Min.
Typ.
Max.
Units

62.5
°C/W
1
05/20/14
END OF LIFE
IRF7105QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V (BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
V GS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
I GSS
Gate-to-Source Forward Leakage
Qg
Total GateCharge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
LS
Internal Drain Inductace
Internal Source Inductance
C iss
Input Capacitance
C oss
Output Capacitance
Crss
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
25
-25

1.0
-1.0

Typ. Max.

0.030
-0.015
0.083 0.10
0.14 0.16
0.16 0.25
0.30 0.40
3.0
-3.0
4.3
3.1
2.0
-2.0

25
-25
±100
9.4 27
10
25
1.7
1.9
3.1
2.8
7.0 20
12
40
9.0 20
13
40
45
90
45
90
25
50
37
50
4.0
6.0
330
290
250
210
61

Units
V
V/°C
Ω
V
S
µA
nC
ns
nH
pF
Conditions
VGS = 0V, I D = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, I D = 1.0A
VGS = 4.5V, ID = 0.50A
VGS = -10V, ID = -1.0A
VGS = -4.5V, I D = -0.50A
VDS = VGS, I D = 250µA
VDS = VGS, I D = -250µA
VDS = 15V, I D = 3.5A
VDS = -15V, I D = -3.5A
VDS = 20V, VGS = 0V
VDS = -20V, VGS = 0V,
VDS = 20V, VGS = 0V, TJ = 55°C
VDS = -20V, V GS = 0V, TJ = 55°C
VGS = ± 20V
N-Channel
I D = 2.3A, VDS = 12.5V, VGS = 10V

P-Channel
I D = -2.3A, VDS = -12.5V, VGS = -10V
N-Channel
VDD = 25V, I D = 1.0A, RG = 6.0Ω,
RD = 25Ω
P-Channel
VDD = -25V, ID = -1.0A, RG = 6.0Ω,
RD = 25Ω

Between lead , 6mm (0.25in.)from
package and center of die contact
N-Channel
VGS = 0V, V DS = 15V, = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
I SM
Pulsed Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
Min. Typ. Max. Units
Conditions

2.0

-2.0
A

-9.2

1.2
TJ = 25°C, IS = 1.3A, VGS = 0V
V

-1.2
TJ = 25°C, IS = -1.3A, VGS = 0V

36
54
N-Channel
ns

69 100
TJ = 25°C, IF = 1.3A, di/dt = 100A/µs

41
75
P-Channel

nC
TJ = 25°C, I F = -1.3A, di/dt = 100A/µs

90 180
Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
N-Channel ISD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature.
P-Channel I SD ≤ -2.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2
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IRF7105QPbF
ID , Drain-to-Source Current ( A )
ID , Drain-to-Source Current ( A )
N-Channel
VDS , Drain-to-Source Voltage ( V )
VDS , Drain-to-Source Voltage ( V )
ID , Drain-to-Source Current ( A )
( Normalized)
Fig 2. Typical Output Characteristics
RDS (on) , Drain-to-Source On Resistance
Fig 1. Typical Output Characteristics
VGS , Gate-to-Source Voltage ( V )
Fig 4. Normalized On-Resistance
Vs. Temperature
C , Capacitance ( pF )
VGS , Gate-to-Source Voltage ( V )
Fig 3. Typical Transfer Characteristics
TJ , Junction Temperature ( °C )
V DS , Drain-to-Source Voltage ( V )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
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QG , Total Gate Charge ( nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
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IRF7105QPbF
I D , Drain Current ( A )
I SD , Reverse Drain Current ( A )
N-Channel
V DS , Drain-to-Source Voltage ( V )
VSD , Source-to-Drain Voltage ( V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
RD
VDS
I D , Drain Current ( A )
VGS
D.U.T.
RG
+
V
- DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VDS
TA , Ambient Temperature ( °C )
90%
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
10%
VGS
td(on)
50KΩ
12V
t d(off)
tf
Fig 10b. Switching Time Waveforms
.2μF
.3μF
D.U.T.
+
V
- DS
QG
10V
VGS
QGS
3mA
QGD
VG
IG
ID
Current Sampling Resistors
Fig 11a. Gate Charge Test Circuit
4
tr
Charge
Fig 11b. Basic Gate Charge Waveform
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IRF7105QPbF
-ID , Drain-to-Source Current ( A )
-ID , Drain-to-Source Current ( A )
P-Channel
-V DS , Drain-to-Source Voltage ( V )
-VDS , Drain-to-Source Voltage ( V )
-ID , Drain-to-Source Current ( A )
( Normalized)
Fig 13. Typical Output Characteristics
RDS (on) , Drain-to-Source On Resistance
Fig 12. Typical Output Characteristics
-V GS , Gate-to-Source Voltage ( V )
Fig 15. Normalized On-Resistance
Vs. Temperature
C , Capacitance ( pF )
-V GS , Gate-to-Source Voltage ( V )
Fig 14. Typical Transfer Characteristics
TJ , Junction Temperature ( °C )
-VDS , Drain-to-Source Voltage ( V )
QG , Total Gate Charge ( nC )
Fig 16. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 17. Typical Gate Charge Vs.
Gate-to-Source Voltage
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5
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IRF7105QPbF
-ID , Drain Current ( A )
-ISD , Reverse Drain Current ( A )
P-Channel
VDS , Drain-to-Source Voltage ( V )
VSD , Source-to-Drain Voltage ( V )
Fig 18. Typical Source-Drain Diode
Forward Voltage
Fig 19. Maximum Safe Operating Area
RD
VDS
-ID , Drain Current ( A )
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 21a. Switching Time Test Circuit
VDS
TA , Ambient Temperature ( °C )
90%
Fig 20. Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
10%
VGS
td(on)
50KΩ
12V
t d(off)
tf
Fig 21b. Switching Time Waveforms
.2μF
.3μF
D.U.T.
+VDS
QG
-10V
VGS
QGS
-3mA
QGD
VG
IG
ID
Current Sampling Resistors
Fig 22a. Gate Charge Test Circuit
6
tr
Charge
Fig 22b. Basic Gate Charge Waveform
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IRF7105QPbF
N & P-Channel
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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END OF LIFE
IRF7105QPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T

Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+

-
-

+
**

RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
+
-
*
VDD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 24. For N and P Channel HEXFETS
8
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IRF7105QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
e1
6X
e
e1
A
0.25 [.010]
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
A1
MAX
K x 45°
C
8X b
MILLIMETERS
MAX
A
5
INCHES
MIN
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET )
INTERNAT IONAL
RECTIFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY SIT E CODE
LOT CODE
PART NUMBER
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
END OF LIFE
IRF7105QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRF7105QPbF
†
Qualification Information
Industrial †
Qualification level
(per JEDEC JESD47F††guidelines)
Moisture Sensitivity Level
MSL1
SO-8
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes

Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
5/8/2014
Comments
• Added ordering information to reflect the End-Of-life
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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11

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