ON NTNS4C69NTCG Single n-channel small signal mosfet Datasheet

NTNS4C69N
Small Signal MOSFET
30 V, 820 mA, Single N−Channel SOT−883
(XDFN3) 1.0 x 0.6 x 0.4 mm Package
Features
• Single N−Channel MOSFET
• Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for
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Extremely Thin Environments such as Portable Electronics
• Low RDS(on) Solution in Ultra Small 1.0 x 0.6 mm Package
• 1.8 V Gate Drive
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
MOSFET
RDS(on) MAX
V(BR)DSS
0.155 W @ 4.5 V
Compliant
0.168 W @ 3.7 V
Applications
•
•
•
•
ID MAX
0.180 W @ 3.3 V
30 V
High Side Switch
High Speed Interfacing
Level Shift and Translate
Optimized for DC−DC Converter Power Management in Ultra
Portable Solutions
0.220 W @ 2.5 V
0.450 W @ 1.8 V
N−Channel MOSFET
D (3)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGS
±12
V
ID
820
mA
Continuous Drain
Current (Note 1)
Power Dissipation (Note 1)
Steady
State
TA = 25°C
TA = 85°C
590
t≤5s
TA = 25°C
970
Steady
State
TA = 25°C
t≤5s
TA = 25°C
Pulsed Drain Current
tp = 10 ms
PD
mW
156
mA
TJ,
TSTG
-55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
156
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Units
Junction-to-Ambient – Steady State (Note 1)
RθJA
800
°C/W
Junction-to-Ambient – t ≤ 5 s (Note 1)
RθJA
570
1. Surface Mounted on FR4 Board using the minimum recommended pad size,
(or 2 mm2), 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
January, 2016 − Rev. 0
MARKING
DIAGRAM
220
2.4
© Semiconductor Components Industries, LLC, 2016
G (1)
S (2)
IDM
Operating Junction and Storage
Temperature
820 mA
1
3
2 1
SOT−883
(XDFN3)
CASE 506CB
AA M
AA = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NTNS4C69NTCG
SOT−883
(Pb−Free)
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTNS4C69N/D
NTNS4C69N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
30
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 24 V
Gate-to-Source Leakage Current
IGSS
VDS = 0 V, VGS = 12 V
VGS(TH)
VGS = VDS, ID = 10 mA
V
17
TJ = 25°C
mV/°C
1.0
mA
100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Gate Threshold
Temperature Coefficient
Drain-to-Source On Resistance
VGS(TH)/TJ
0.65
1.1
−3.0
RDS(on)
VGS = 4.5 V, ID = 300 mA
0.127
0.155
VGS = 3.7 V, ID = 250 mA
0.135
0.168
VGS = 3.3 V, ID = 200 mA
0.140
0.180
VGS = 2.5 V, ID = 150 mA
0.170
0.220
VGS = 1.8 V, ID = 100 mA
0.300
0.450
Forward Transconductance
gFS
VDS = 5 V, ID = 200 mA
2.0
Source−Drain Diode Voltage
VSD
VGS = 0 V, IS = 100 mA
0.7
V
mV/°C
W
S
1.0
V
CHARGES & CAPACITANCES
Input Capacitance
CISS
75
VGS = 0 V, f = 1 MHz,
VDS = 15 V
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
3.0
Total Gate Charge
QG(TOT)
0.9
Threshold Gate Charge
QG(TH)
0.1
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 4.5 V, VDS = 15 V,
ID = 200 mA
pF
34
nC
0.2
0.1
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
4.5
VGS = 4.5 V, VDD = 15 V,
ID = 200 mA, RG = 2 W
tf
ns
3.5
9.0
7.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTNS4C69N
TYPICAL CHARACTERISTICS
4.5
5
3
2.2 V
2
2.0 V
1
1.8 V
0
1.6 V
1.4 V
4.0 4.5 5.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
3.5
3.0
2.5
2.0
TJ = 25°C
1.5
1.0
TJ = 125°C
0
0.5
1.0
1.5
2.0
2.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 0.3 A
400
350
300
250
200
150
100
2.5
2.0
3.0
3.5
4.0
4.5
5.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
400
380
360
340
320
300
280
260
240
220
200
180
160
140
120
100
3.0
TJ = 25°C
VGS = 1.8 V
VGS = 3.7 V
VGS = 2.5 V
VGS = 3.3 V
VGS = 4.5 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
1.5
TJ = −55°C
0
450
1.5
VDS = 5 V
0.5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
2.5 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Normalized)
4.0
4
10,000
VGS = 10 V
ID = 0.3 A
TJ = 25°C
1000
1.4
IDSS, LEAKAGE (nA)
ID, DRAIN CURRENT (A)
VGS = 4.5 V to 2.9 V
1.3
1.2
1.1
1.0
TJ = 85°C
100
TJ = 125°C
10
1
0.9
0.1
0.8
0.7
−50
TJ = 150°C
0.01
−25
0
25
50
75
100
125
150
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTNS4C69N
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
1000
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
100
Coss
10
Crss
1
0
5
10
15
20
25
VDS = 15 V
ID = 0.2 A
TJ = 25°C
9
8
7
6
5
4
3
QGS
QGD
2
1
0
0
30
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
2.0
1
VGS = 0 V
IS, SOURCE CURRENT (A)
VGS = 4.5 V
VDS = 15 V
ID = 0.2 A
t, TIME (ns)
10
td(off)
tf
10
td(on)
tr
1
0.1
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.01
0.001
1
10
0.3
100
0.4
0.5
0.6
0.7
0.8
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
0.9
NTNS4C69N
PACKAGE DIMENSIONS
SOT−883 (XDFN3), 1.0x0.6, 0.35P
CASE 506CB
ISSUE A
ÉÉÉ
ÉÉÉ
0.10 C
0.10 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
A B
D
PIN ONE
REFERENCE
E
DIM
A
A1
b
D
D2
e
E
E2
L
TOP VIEW
NOTE 3
0.10 C
A
MILLIMETERS
MIN
MAX
0.340 0.440
0.000 0.030
0.075 0.200
0.950 1.075
0.620 BSC
0.350 BSC
0.550 0.675
0.425 0.550
0.170 0.300
0.10 C
3X
A1
SIDE VIEW
C
RECOMMENDED
SOLDER FOOTPRINT*
SEATING
PLANE
1.10
D2
2X
0.43
1
0.41
0.55
E2
e/2
1
e
b
C A B
2X
0.10
0.05
M
M
C
3X
2X
L
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
ON Semiconductor and the
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NTNS4C69N/D
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