IPA60R180P7S MOSFET 600VCoolMOSªP7PowerTransistor PG-TO220FP TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentESDcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler. Features •Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness •Significantreductionofswitchingandconductionlosses •ExcellentESDrobustness>2kV(HBM)forallproducts •BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm²) •LargeportfoliowithgranularRDS(on)selectionqualifiedforavarietyof industrialandconsumergradeapplicationsaccordingtoJEDEC (J-STD20andJESD22) Drain Pin 2 Gate Pin 1 Source Pin 3 Benefits •Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages •Simplifiedthermalmanagementduetolowswitchingandconduction losses •Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection •Suitableforawidevarietyofapplicationsandpowerranges Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 180 mΩ Qg.typ 25 nC ID,pulse 53 A Eoss@400V 2.9 µJ Body diode di/dt 900 A/µs Type/OrderingCode Package IPA60R180P7S PG-TO 220 FullPAK Final Data Sheet Marking 60S180P7 1 RelatedLinks see Appendix A Rev.2.0,2017-06-13 600VCoolMOSªP7PowerTransistor IPA60R180P7S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2017-06-13 600VCoolMOSªP7PowerTransistor IPA60R180P7S 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 18 11 A TC=25°C TC=100°C - 53 A TC=25°C - - 56 mJ ID=4.0A; VDD=50V; see table 10 EAR - - 0.28 mJ ID=4.0A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 4.0 A - MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 26 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque - - - 50 Ncm M2.5 screws IS - - 18.0 A TC=25°C Diode pulse current IS,pulse - - 53 A TC=25°C Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=18A,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 900 A/µs VDS=0...400V,ISD<=18A,Tj=25°C see table 8 Insulation withstand voltage VISO - - 2500 V Vrms,TC=25°C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) 1) Limited by Tj max. Maximum Duty Cycle D = 0.50; TO-220 equivalent Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical Rg 2) Final Data Sheet 3 Rev.2.0,2017-06-13 600VCoolMOSªP7PowerTransistor IPA60R180P7S 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 4.85 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - °C/W - Soldering temperature, wavesoldering only allowed at leads - - 260 °C Final Data Sheet Tsold 4 1.6mm (0.063 in.) from case for 10s Rev.2.0,2017-06-13 600VCoolMOSªP7PowerTransistor IPA60R180P7S 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.5 4 V VDS=VGS,ID=0.28mA - 10 1 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 1000 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.145 0.34 0.180 - Ω VGS=10V,ID=5.6A,Tj=25°C VGS=10V,ID=5.6A,Tj=150°C Gate resistance RG - 11 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1081 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 19 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 36 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 381 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 14 - ns VDD=400V,VGS=13V,ID=5.6A, RG=10.0Ω;seetable9 Rise time tr - 12 - ns VDD=400V,VGS=13V,ID=5.6A, RG=10.0Ω;seetable9 Turn-off delay time td(off) - 85 - ns VDD=400V,VGS=13V,ID=5.6A, RG=10.0Ω;seetable9 Fall time tf - 8 - ns VDD=400V,VGS=13V,ID=5.6A, RG=10.0Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 6 - nC VDD=400V,ID=5.6A,VGS=0to10V Gate to drain charge Qgd - 8 - nC VDD=400V,ID=5.6A,VGS=0to10V Gate charge total Qg - 25 - nC VDD=400V,ID=5.6A,VGS=0to10V Gate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=5.6A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 5 Rev.2.0,2017-06-13 600VCoolMOSªP7PowerTransistor IPA60R180P7S Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=5.6A,Tj=25°C 175 - ns VR=400V,IF=2A,diF/dt=100A/µs; see table 8 - 1.3 - µC VR=400V,IF=2A,diF/dt=100A/µs; see table 8 - 15 - A VR=400V,IF=2A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.0,2017-06-13 600VCoolMOSªP7PowerTransistor IPA60R180P7S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 30 1 µs 101 25 10 µs 100 µs 100 1 ms 10 ms 10-1 ID[A] Ptot[W] 20 15 DC 10-2 10 10-3 5 0 10-4 0 25 50 75 100 125 10-5 150 100 101 102 TC[°C] 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 µs 10 µs 1 10 0.5 100 µs 100 1 ms 0.2 100 10 ms ZthJC[K/W] 0.1 10-1 ID[A] DC 10-2 0.05 0.02 10-1 0.01 -3 10 single pulse -4 10 10-5 100 101 102 103 10-2 10-5 10-4 10-3 VDS[V] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-2 10-1 100 tp[s] ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,2017-06-13 600VCoolMOSªP7PowerTransistor IPA60R180P7S Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 70 45 20 V 20 V 10 V 40 60 8V 35 7V 30 10 V 8V 7V 50 6V ID[A] ID[A] 40 30 25 20 5.5 V 15 6V 20 10 5V 5 4.5 V 5.5 V 10 5V 0 4.5 V 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.700 3.000 6V 5.5 V 2.500 RDS(on)[Ω] 7V 10 V 0.500 20 V RDS(on)[normalized] 6.5 V 2.000 1.500 1.000 0.500 0.300 0 10 20 30 40 0.000 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=5.6A;VGS=10V 8 Rev.2.0,2017-06-13 600VCoolMOSªP7PowerTransistor IPA60R180P7S Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 80 10 9 8 25 °C 60 120 V 7 400 V 40 VGS[V] ID[A] 6 150 °C 5 4 3 20 2 1 0 0 2 4 6 8 10 0 12 0 5 VGS[V] 10 15 20 25 125 150 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=5.6Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 60 50 101 IF[A] EAS[mJ] 40 125 °C 30 25 °C 100 20 10 10-1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 VSD[V] 100 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=4.0A;VDD=50V 9 Rev.2.0,2017-06-13 600VCoolMOSªP7PowerTransistor IPA60R180P7S Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 690 680 670 104 660 650 640 Ciss 103 C[pF] VBR(DSS)[V] 630 620 610 102 600 Coss 590 580 101 570 560 Crss 550 540 -50 -25 0 25 50 75 100 125 150 100 0 100 200 Tj[°C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 5 4 Eoss[µJ] 3 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.0,2017-06-13 600VCoolMOSªP7PowerTransistor IPA60R180P7S 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.0,2017-06-13 600VCoolMOSªP7PowerTransistor IPA60R180P7S 6PackageOutlines 1 2 3 DIMENSIONS A A1 A2 b b1 b2 b3 b4 c D D1 E e H L L1 Q MILLIMETERS MIN. MAX. 4.50 4.90 2.34 2.85 2.86 2.42 0.65 0.90 0.95 1.38 0.95 1.51 0.65 1.38 0.65 1.51 0.40 0.63 15.67 16.15 8.97 9.83 10.00 10.65 2.54 28.70 29.75 13.75 12.78 2.83 3.45 3.00 3.30 3.50 3.15 DOCUMENT NO. Z8B00003319 REVISION 07 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 27.01.2017 Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches Final Data Sheet 12 Rev.2.0,2017-06-13 600VCoolMOSªP7PowerTransistor IPA60R180P7S 7AppendixA Table11RelatedLinks • IFXCoolMOSP7Webpage:www.infineon.com • IFXCoolMOSP7applicationnote:www.infineon.com • IFXCoolMOSP7simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.0,2017-06-13 600VCoolMOSªP7PowerTransistor IPA60R180P7S RevisionHistory IPA60R180P7S Revision:2017-06-13,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-06-13 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2017InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.0,2017-06-13