DMTH4007SPS Green 40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI Product Summary Features BVDSS RDS(ON) Max 40V 7.6mΩ @ VGS = 10V ID Max TC = +25°C (Note 9) 100A Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch. Rated to +175°C – Ideal for High Ambient Temperature Environments Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH4007SPSQ) Applications Mechanical Data Power Management DC-DC Converters Motor Control ® Case: POWERDI 5060-8 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) ® POWERDI 5060-8 Pin1 Top View Bottom View Internal Schematic S D S D S D G D Top View Pin Configuration Ordering Information (Note 4) Part Number DMTH4007SPS-13 Notes: Case ® POWERDI 5060-8 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. POWERDI is a registered trademark of Diodes Incorporated. DMTH4007SPS Document number: DS37358 Rev. 4 - 2 1 of 8 www.diodes.com November 2015 © Diodes Incorporated DMTH4007SPS Marking Information D D D D = Manufacturer’s Marking H4007SS = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 to 53) H4007SS YY WW S S S G Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) Continuous Drain Current (Note 6) TA = +25°C TA = +70°C TC = +25°C (Note 9) TC = +100°C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.3mH Avalanche Energy, L=0.3mH ID ID Value 40 ±20 15.7 13.1 100 Units V V A A IS IDM IAS EAS 77 100 120 20 60 A A A mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 2.8 53 136 1.1 -55 to +175 Units W °C/W W °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Notes: TA = +25°C TC = +25°C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). POWERDI is a registered trademark of Diodes Incorporated. DMTH4007SPS Document number: DS37358 Rev. 4 - 2 2 of 8 www.diodes.com November 2015 © Diodes Incorporated DMTH4007SPS Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 40 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 32V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD 2 — — — 4.9 — 4 7.6 1.2 V mΩ V VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 0V, IS = 20A Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — 2,082 790 113 0.46 41.9 10 11.5 7 11.5 15.6 8.8 29.9 23 — — — — — — — — — — — — — pF VDS = 25V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 20A, VGS = 10V ns VDD = 30V, VGS = 10V, ID = 20A, RG = 3Ω ns nC IF = 20A, di/dt = 100A/μs 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limited. POWERDI is a registered trademark of Diodes Incorporated. DMTH4007SPS Document number: DS37358 Rev. 4 - 2 3 of 8 www.diodes.com November 2015 © Diodes Incorporated DMTH4007SPS 50.0 30 40.0 VGS=6.0V 30.0 VGS=10.0V VGS=4.5V 20.0 10.0 VDS= 5.0V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=5.0V VGS=4.0V 20 15 125℃ 10 150℃ 5 175℃ VGS=3.5V 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 10.00 9.00 VGS=6.0V 8.00 7.00 6.00 VGS=10V 5.00 4.00 3.00 2.00 1.00 0.00 0 0 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) -55℃ 0 0.0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 6 50 45 40 35 30 25 20 15 ID=20A 10 5 0 10 15 20 25 30 35 40 45 50 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 5 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2.2 0.012 VGS=10V 0.01 150℃ 125℃ 175℃ 0.008 85℃ 0.006 25℃ -55℃ 0.004 0.002 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85℃ 25℃ 2 1.8 1.6 VGS=10V, ID=20A 1.4 1.2 1 0.8 0.6 0.4 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMTH4007SPS Document number: DS37358 Rev. 4 - 2 4 of 8 www.diodes.com November 2015 © Diodes Incorporated DMTH4007SPS 0.01 VGS(TH), GATE THRESHOLD VOLTAGE (V) 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.009 0.008 0.007 VGS=10V, ID=20A 0.006 0.005 0.004 0.003 0.002 0.001 3.5 3 2.5 ID=1mA 2 ID=250μA 1.5 1 0 0.5 -50 -25 0 25 50 75 100 125 150 175 -50 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 30 10000 VGS=0V, TA=150℃ 20 VGS=0V, TA=175℃ 15 VGS=0V, TA=85℃ 10 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS=0V, TA=125℃ 25 IS, SOURCE CURRENT (A) -25 VGS=0V, TA=25℃ 5 VGS=0V, TA=-55℃ Ciss 1000 Coss Crss 100 0 10 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 1.5 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 40 1000 10 R DS(on) Limited PW = 1µs VDS=30V, ID=20A 6 VGS (V) ID , DRAIN CURRENT (A) 8 4 100 PW = 1s PW = 100ms 10 PW = 1ms PW = 100µs 1 2 PW = 10ms TJ (m ax ) = 175°C PW = 10µs TC = 25°C 0 0 5 10 15 20 25 30 35 Qg,TOTAL GATE CHARGE (nC) Figure 11. Gate Charge 40 45 .1 .1 V GS = 10V Single Pulse DUT on Infinite Heatsink 10 1 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated. DMTH4007SPS Document number: DS37358 Rev. 4 - 2 5 of 8 www.diodes.com November 2015 © Diodes Incorporated DMTH4007SPS 1 D=0.9 r(t), TRANSIENT THERMAL RESISTANCE D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC (t)=r(t) * RθJC RθJC=1.05℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance POWERDI is a registered trademark of Diodes Incorporated. DMTH4007SPS Document number: DS37358 Rev. 4 - 2 6 of 8 www.diodes.com November 2015 © Diodes Incorporated DMTH4007SPS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. ® POWERDI 5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G POWERDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 — b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 — — L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. POWERDI®5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X G Y(4x) Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 POWERDI is a registered trademark of Diodes Incorporated. DMTH4007SPS Document number: DS37358 Rev. 4 - 2 7 of 8 www.diodes.com November 2015 © Diodes Incorporated DMTH4007SPS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMTH4007SPS Document number: DS37358 Rev. 4 - 2 8 of 8 www.diodes.com November 2015 © Diodes Incorporated