INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP60R280E6，IIPP60R280E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 13.8 A IDM Drain Current-Single Pulsed 40 A PD Total Dissipation @TC=25℃ 104 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.2 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP60R280E6，IIPP60R280E6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =0.25mA 600 VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.43mA 2.5 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 3.5 V VGS=10V; ID=6.5A 0.28 Ω Gate-Source Leakage Current VGS=20V; VDS=0V 0.1 μA IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V 1 μA VSD Diode forward voltage IF=6.5A; VGS = 0V isc website：www.iscsemi.cn 2 0.9 V isc & iscsemi is registered trademark