AP3N1R8MT
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
D
▼ Simple Drive Requirement
▼ Ultra Low On-resistance
30V
RDS(ON)
1.89mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
4
165A
S
D
Description
AP3N1R8 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
.
Parameter
Drain Current (Chip), VGS @ 10V
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
4
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
5
Rating
Units
30
V
+20
V
165
A
40.6
A
32.5
A
300
A
83.3
W
5
W
28.8
mJ
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
3
Value
Units
1.5
℃/W
25
℃/W
1
201603311
AP3N1R8MT
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=20A
-
-
1.89
mΩ
VGS=4.5V, ID=20A
-
-
3.6
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
120
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=20A
-
38
60
nC
Qgs
Gate-Source Charge
VDS=15V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
22
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
14
-
ns
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
52
-
ns
tf
Fall Time
VGS=10V
-
42
-
ns
Ciss
Input Capacitance
VGS=0V
-
3030 4850
pF
Coss
Output Capacitance
VDS=25V
Crss
Rg
-
820
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
420
-
pF
Gate Resistance
f=1.0MHz
-
1.3
2.6
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
47
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
57
-
nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec, 60 C/W at steady state.
4.Package limitation current is 100A .
o
5.Starting Tj=25 C , VDD=30V , L=0.1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3N1R8MT
200
320
10V
8.0V
7.0V
6.0V
5.0V
V G = 4.0 V
ID , Drain Current (A)
240
10V
8.0V
7.0V
6.0V
5.0V
V G =4.0V
o
T C =150 C
160
ID , Drain Current (A)
o
T C =25 C
160
120
80
80
40
0
0
0
0.4
0.8
1.2
1.6
0
2
V DS , Drain-to-Source Voltage (V)
0.8
1.2
1.6
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
2.4
I D =20A
V G =10V
I D =20A
2.2
2
.
Normalized RDS(ON)
T C =25 o C
RDS(ON) (mΩ)
0.4
1.6
1.2
0.8
1.8
0.4
1.6
2
4
6
8
-100
10
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
100
I D = 250uA
Normalized VGS(th)
1.6
IS(A)
10
T j =150 o C
T j =25 o C
1
1.2
0.8
0.4
0.1
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3N1R8MT
10
f=1.0MHz
4000
VGS , Gate to Source Voltage (V)
I D =20A
V DS =15V
8
C (pF)
3000
6
C iss
2000
4
1000
C oss
C rss
2
0
0
0
10
20
30
40
50
1
60
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Operation in this
area limited by
RDS(ON)
100
ID (A)
100us
.
10
1ms
10ms
100ms
DC
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
1
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x R thjc + T c
0.001
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
200
200
V DS =5V
160
ID , Drain Current (A)
ID , Drain Current (A)
160
120
Limited by package
80
120
80
T j =150 o C
40
40
0
0
T j =25 o C
o
T j = -55 C
25
50
75
100
T C , Case Temperature (
125
o
C)
Fig 11. Drain Current v.s. Case
Temperature
150
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP3N1R8MT
2
120
I D =1mA
100
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
80
60
40
0.4
20
0
0
-100
-50
T
0
j
50
100
150
0
, Junction Temperature ( o C)
50
100
150
o
T C , Case Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
20
T j =25 o C
RDS(ON) (mΩ)
16
12
.
8
4
4.5V
V GS =10V
0
0
20
40
60
80
100
120
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP3N1R8MT
MARKING INFORMATION
Part Number
3N1R8
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6