Vishay MUH1PD Surface mount ultrafast rectifier Datasheet

New Product
MUH1PB thru MUH1PD
Vishay General Semiconductor
Surface Mount Ultrafast Rectifiers
FEATURES
®
• Very low profile - typical height of 0.65 mm
eSMP Series
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low power losses
• Ultrafast recovery times for high frequency
Top View
Bottom View
MicroSMP
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020C,
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
100 V, 150 V, 200 V
IFSM
10 A
trr
25 ns
VF at IF = 1.0 A
0.82 V
IR
1 μA
TJ max.
175 °C
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds AC/AC and DC/DC converters.
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
MUH1PB
MUH1PC
MUH1PD
HB
HC
HD
100
150
200
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
10
A
TJ, TSTG
- 55 to + 175
°C
Operating junction and storage temperature range
Document Number: 89124
Revision: 19-Apr-11
V
For technical questions within your region, please contact one of the following:
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
MUH1PB thru MUH1PD
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 0.5 A
TA = 25 °C
IF = 1.0 A
Maximum instantaneous
forward voltage
VF (1)
IF = 0.5 A
TA = 125 °C
IF = 1.0 A
TA = 25 °C
Maximum reverse current
Rated VR
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Typical softness factor (tb/ta)
IF = 1.0 A, dI/dt = 200 A/μs,
VR = 200 V
Typical reverse recovery current
Typical stored charge
Typical junction capacitance
IR (2)
TA = 125 °C
IF = 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 0.1 IRM
Typical reverse recovery time
SYMBOL
TA = 25 °C
TYP.
MAX.
0.90
-
1.0
1.05
0.72
-
0.82
0.90
-
1.0
3.0
15
19
25
29
40
UNIT
V
μA
trr
TA = 125 °C
4.0 V, 1 MHz
ns
S
0.5
-
IRM
3.4
4.6
A
Qrr
45
-
nC
CJ
10
-
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RJA
Typical thermal resistance
MUH1PB
MUH1PC
(1)
MUH1PD
UNIT
166
RJM (1)
°C/W
40
Note
(1) Free air, mounted on recommended copper pad area. Thermal resistance R
JA - from junction to ambient, RJM - and junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MUH1PD-M3/89A
0.006
89A
4500
7" diameter plastic tape and reel
MUH1PDHM3/89A (1)
0.006
89A
4500
7" diameter plastic tape and reel
Note
(1) Automotive grade
RATINGS AND CHARACTERISTICS CURVES
1.2
1.2
1.0
1.0
D = 0.8
Average Power Loss (W)
Average Forward Rectified Current (A)
(TA = 25 °C unless otherwise noted)
0.8
0.6
0.4
TM Measured
at the Cathode Band Terminal
0.2
D = 0.5
D = 0.3
D = 0.2
0.8
D = 1.0
0.6
T
D = 0.1
0.4
0.2
D = tp/T
tp
0
0
95
105
115
125
135
145
155
165
175
0
0.2
0.4
0.6
0.8
1.0
1.2
Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
Document Number: 89124
[email protected], [email protected], [email protected]
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
MUH1PB thru MUH1PD
Vishay General Semiconductor
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 175 °C
10
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.1
10
TA = 25 °C
0.01
0.2
1
0.4
0.6
0.8
1.2
1
1.4
1.6
1.8
2.0
0.1
2.2
1
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
Fig. 5 - Typical Junction Capacitance
100
1000
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10
Reverse Voltage (V)
TA = 175 °C
10
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
20
30
40
50
60
70
80
90
100
10
1
0.01
0.001
10
Junction to Ambient
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
MicroSMP
0.059 (1.50)
0.043 (1.10)
Cathode Band
0.055 (1.40)
0.047 (1.20)
0.030 (0.75)
0.022 (0.55)
0.039 (0.98)
0.031 (0.78)
0.091 (2.30)
0.083 (2.10)
0.106 (2.70)
0.091 (2.30)
0.030 (0.75)
0.022 (0.55)
Mounting Pad Layout
0.079
(2.00)
0.029 (0.73)
0.025 (0.63)
0.043
(1.10)
0.011 (0.27)
0.005 (0.12)
Document Number: 89124
Revision: 19-Apr-11
0.032
(0.80)
0.032
(0.80)
0.020 (0.50)
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
Revision: 11-Mar-11
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