Diodes DMN6040SVTQ-13 60v n-channel enhancement mode mosfet Datasheet

DMN6040SVTQ
60V N-CHANNEL ENHANCEMENT MODE MOSFET
V(BR)DSS
Features and Benefits








ID
RDS(ON) Max
TA = +25°C
44mΩ @ VGS = 10V
5.0A
60mΩ @ VGS = 4.5V
4.3A
60V
100% Unclamped Inductive Switch (UIS) Test in Production
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,


making it ideal for high efficiency power management applications.



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

DC-DC Converters
Power Management Functions
Backlighting

TSOT26
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
D 1
6
D
D 2
5
D
G 3
4
S
Top View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information (Note 5)
Part Number
DMN6040SVTQ-7
DMN6040SVTQ-13
Notes:
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
32D
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
…
…
Feb
2
DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
2017
E
Mar
3
32D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
YM
ADVANCE INFORMATION
Product Summary
2018
F
Apr
4
2019
G
May
5
2020
H
Jun
6
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2021
I
Jul
7
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
December 2015
© Diodes Incorporated
DMN6040SVTQ
ADVANCE INFORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
t<10s
Continuous Drain Current (Note 7) VGS = 5V
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 0.1mH
Avalanche Energy (Note 8) L = 0.1mH
ID
Value
60
±20
5.0
4.0
ID
6.3
5.0
A
ID
4.3
3.4
A
5.4
4.3
2.1
30
14.2
10
ID
IS
IDM
IAR
EAR
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Symbol
TA = +25°C
TA = +70°C
Steady State
t<10s
TA = +25°C
TA = +70°C
Steady State
t<10s
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Notes:
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.2
0.75
106
69
1.8
1.1
68
44
20
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.
DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
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DMN6040SVTQ
100
PW = 10µs
Single Pulse
RJA = 72C/W
RJA(t) = r(t) * RJA
TJ - TA = P * RJA(t)
80
ID, DRAIN CURRENT (A)
P(PK), PEAK TRANSIENT POIWER (W)
60
40
10
RDS(on)
Limited
DC
1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
0.1
PW = 100µs
20
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
1
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
100
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
100
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 72C/W
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
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10
100
1,000
December 2015
© Diodes Incorporated
DMN6040SVTQ
ADVANCE INFORMATION
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60






100
100
V
nA
nA
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS(TH)
RDS(ON)
|YFS|
VSD

30
35
4.5
0.7
3
44
60

1.2
V
Static Drain-Source On-Resistance
1




VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.3A
VGS = 4.5V, ID = 4A
VDS = 10V, ID = 4.3A
VGS = 0V, IS = 1A
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR














1,287
57
44
1.2
22.4
10.4
4.9
3.0
6.6
8.1
20.1
4.0
18
11.9














Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
mΩ
S
V
Test Condition
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 30V, ID = 4.3A
ns
VGS = 10V, VDD = 30V, RG = 6Ω,
ID = 4.3A
ns
nC
IS = 4.3A, dI/dt = 100A/μs
IS = 4.3A, dI/dt = 100A/μs
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
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DMN6040SVTQ
20
20
VDS = 5.0V
16
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
12
8
12
8
TA = 150°C
TA = 125°C
4
4
TA = 85°C
T A = 25°C
0
0
0.5
1.0
1.5
2.0
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristic
3.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.10
0.09
0.08
0.07
0.06
0.05
VGS = 4.5V
0.04
0.03
VGS = 10V
0.02
0.01
0
0
4
8
12
16
ID, DRAIN-SOURCE CURRENT
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
TA = -55°C
0
1
2
3
4
VGS, GATE-SOURCE VOLTAGE
Fig. 5 Typical Transfer Characteristics
5
0.10
0.08
0.06
ID = 3.5A
ID = 4.5A
0.04
0.02
20
0
0
1
2
3
4
5
6
7
8
9
V GS, GATE-SOURCE VOLTAGE (V)
Fig. 7 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
2.4
0.10
0.09
2.2
VGS = 4.5V
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
ADVANCE INFORMATION
16
TA = 150°C
0.08
0.07
TA = 125°C
0.06
0.05
T A = 85°C
0.04
TA = 25°C
0.03
0.02
TA = -55°C
0.01
VGS = 10V
ID = 10A
2.0
1.8
1.6
1.4
VGS = 4.5V
ID = 5A
1.2
1.0
0.8
0.6
0.4
0.2
0
0
4
8
12
16
ID, DRAIN CURRENT
Fig. 8 Typical On-Resistance vs.
Drain Current and Temperature
DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
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0
50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 9 On-Resistance Variation with Temperature
December 2015
© Diodes Incorporated
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
4.0
0.10
0.08
VGS = 4.5V
ID = 500mA
0.06
0.04
VGS = 2.5V
ID = 200mA
0.02
3.5
3.0
2.5
ID = 1mA
2.0
1.5
ID = 250µA
1.0
0.5
0
- 50
0
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Fig. 11 Gate Threshold Variation vs. Ambient Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 10 On-Resistance Variation with Temperature
CT, JUNCTION CAPACITANCE (pF)
20
IS, SOURCE CURRENT (V)
16
TA = 25°C
12
8
4
Ciss
Coss
Crss
f = 1MHz
0
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 12 Diode Forward Voltage vs. Current
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
30
VDS = 30V
ID = 4.3A
VGS GATE THRESHOLD VOLTAGE (V)
ADVANCE INFORMATION
DMN6040SVTQ
0
5
10
15
20
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate Charge
DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
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DMN6040SVTQ
Package Outline Dimensions
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
TSOT26
D
e1
01(4x)
E1/2
E/2
E1
c
E
Gauge Plane
0
L
e
Seating Plane
L2
01(4x)
b
A2
A1
A
Seating Plane
TSOT26
Dim
Min
Max
Typ
A
1.00


A1
0.010 0.100

A2
0.840 0.900

D
2.800 3.000 2.900
E
2.800 BSC
E1
1.500 1.700 1.600
b
0.300 0.450

c
0.120 0.200

e
0.950 BSC
e1
1.900 BSC
L
0.30
0.50
L2
0.250 BSC
θ
0°
8°
4°
θ1
4°
12°

All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
TSOT26
C
Dimensions Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
Y1
Y
X
DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
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ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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Copyright © 2015, Diodes Incorporated
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DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
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