HFA04SD20S thru HFA04SD60S ® Pb HFA04SD20S thru HFA04SD60S Pb Free Plating Product 4.0 Ampere Surface Mount Type Ultra Fast Recovery Rectifier Diodes ¬ ¬ ¬ APPLICATIONS ¬ ¬ ¬ ¬ TO-252/D-PAK Ultrafast Recovery Time Unit : inch (mm) .264(6.7) .248(6.3) Soft Recovery Characteristics Low Recovery Loss .098(2.5) .082(2.1) Low Forward Voltage .024(0.6) .016(0.4) .063(1.6) .047(1.2) .216(5.5) .200(5.1) 4 High Surge Current Capability Low Leakage Current .106(2.7) .090(2.3) 2 Freewheeling, Snubber, Clamp 3 1 Inversion Welder PFC/Amplifier Ultrasonic Cleaner and Welder Converter & Chopper LEFT PIN RIGHT PIN UPS/LED SMPS/HID .02(.5) .032(0.8) .012(0.3) .09 .09 (2.3) (2.3) Plating Power Supply .040(1.0) MIN. .225(5.7) .209(5.3) Features ¬ ¬ ¬ ¬ ¬ ¬ .071(1.8) .051(1.3) BOTTOM SIDE HEAT SINK Note: Pins Left & Right must be electrically connected at the printed circuit board. 4 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SYMBOLS Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 4.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance Operating junction and storage temperature range VRRM VRMS VDC HFA04SD20S HFA04SD40S HFA04SD60S 200 140 200 400 280 400 600 420 600 UNITS VOLTS VOLTS VOLTS I(AV) 4.0 Amps IFSM 125 Amps VF 0.95 1.3 1.7 Volts IR 10.0 300.0 MA trr 17-25 ns CJ RQJA TJ,TSTG 58.0 47.0 -65 to +150 pF C/W C Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. Rev.07C © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ HFA04SD20S thru HFA04SD60S ® G FIG. 1- FORWARD CURRENT DERATING CURVE 4.0 Single Phase Half Wave 60Hz Resistive or inductive Load 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES RATINGS AND CHARACTERISTIC CURVES HFA04SD20S thru HFA04SD60S FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 120 90 60 30 175 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C HFA04SD20S HFA04SD40S HFA04SD60S 04350 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0 -./012 B`R<WHT]-F/:aE b]`-c2c2RW 1,000 100 10 TJ=100 C 1 0.01 0 100 10 TJ=25 C TRANSIENT THERMAL IMPEDANCE, C/W 200 10 REVERSE VOLTAGE,VOLTS Rev.07C © 2006 Thinki Semiconductor Co., Ltd. 40 60 80 100 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 1 1.0 20 PERCENTAGE OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF TJ=25 C 0.1 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0.1 100 NUMBER OF CYCLES AT 60 Hz 0.1 1 10 100 100 t,PULSE DURATION,sec. Page 2/2 http://www.thinkisemi.com/