ZSELEC D15XB05 15a glass passivated bridge rectifier Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
D15XB05-D15XB100
15A GLASS PASSIVATED BRIDGE RECTIFIER
Features
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Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 240A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
5S
A
K
B
Mechanical Data
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Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx)
Marking: Type Number
H
20.30
17.00
18.00
M
D
3.80
4.20
P
E
7.30
7.70
G
9.80
10.20
H
2.00
2.40
I
0.90
1.10
J
2.30
2.70
3.0 X 45°
K
R
I
E
30.30
19.70
C
G
29.70
C
N
D
Max
A
B
S
J
Min
L
Lead Free Finish/RoHS Complian
_
Dim
E
L
4.40
4.80
M
3.40
3.80
N
3.10
3.40
P
2.50
2.90
R
0.60
0.80
S
10.80
11.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
@ TC = 100°C
D15XB D15XB D15XB D15XB
20
05
10
40
D15XB D15XB D15XB
Unit
80
100
60
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
15
A
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
IFSM
240
A
Forward Voltage (per element)
@ IF = 7.5A DC
VFM
1.05
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
IR
10
500
µA
I2t
240
A 2s
I2t Rating for Fusing (t < 8.3ms) (Note 1)
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes:
Cj
60
pF
RqJC
0.8
°C/W
Tj, TSTG
-65 to +150
°C
1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm copper plate heat sink.
D15XB05-D15XB100
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Z ibo Seno Electronic Engineering Co., Ltd.
D15XB05-D15XB100
Resistive or
inductive load
With heatsink
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
15
10
5.0
Without heatsink
0
40
120
80
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
0
Tj = 25°C
Pulse width: 300µs
10
1.0
0.1
0.01
0
0.4
1.2
1.6
2.0
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
160
100
Single Half-Sine Wave
(JEDEC Method)
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FWD. SURGE CURRENT (A)
250
100
200
100
10
Tj = 25°C
Tj = 25°C
0
1
10
1.0
100
f = 1 MHz
1.0
IR, INSTANTANEOUS REVERSE CURRENT (µA)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
100
1000
Tj = 125°C
100
Tj = 100°C
10
Tj = 50°C
1.0
Tj = 25°C
0.1
0
D15XB05-D15XB100
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
80
100
120
20
40
60
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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