STMicroelectronics M27V402-200B4TR 4 mbit 256kb x 16 low voltage uv eprom and otp eprom Datasheet

M27V402
4 Mbit (256Kb x 16) Low Voltage UV EPROM and OTP EPROM
■
LOW VOLTAGE READ OPERATION:
3V to 3.6V
■
FAST ACCESS TIME: 120ns
■
LOW POWER CONSUMPTION:
– Active Current 15mA at 5MHz
40
40
– Standby Current 20µA
■
PROGRAMMING VOLTAGE: 12.75V ± 0.25V
■
PROGRAMMING TIME: 100µs/byte (typical)
■
ELECTRONIC SIGNATURE
1
1
FDIP40W (F)
PDIP40 (B)
– Manufacturer Code: 20h
– Device Code: 8Dh
DESCRIPTION
The M27V402 is a low voltage, low power 4 Mbit
UV erasable and electrically programmable
EPROM, ideally suited for handheld and portable
microprocessor systems requiring large programs.
It is organized as 262,144 by 16 bits.
The M27V402 operates in the read mode with a
supply voltage as low as 3V. The decrease in operating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP40W (window ceramic frit-seal package)
has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the
device by following the programming procedure.
Table 1. Signal Names
A0-A17
Address Inputs
Q0-Q15
Data Outputs
E
Chip Enable
G
Output Enable
VPP
Program Supply
VCC
Supply Voltage
VSS
Ground
May 1998
PLCC44 (K)
TSOP40 (N)
10 x 20 mm
Figure 1. Logic Diagram
VCC
VPP
18
16
A0-A17
E
Q0-Q15
M27V402
G
VSS
AI01819
1/15
M27V402
1
40
2
39
3
38
4
37
5
36
6
35
7
34
8
33
9
32
10
31
M27V402
11
30
12
29
13
28
14
27
15
26
16
25
17
24
18
23
19
22
20
21
VCC
A17
A16
A15
A14
A13
A12
A11
A10
A9
VSS
A8
A7
A6
A5
A4
A3
A2
A1
A0
Q13
Q14
Q15
E
VPP
NC
VCC
A17
A16
A15
A14
VPP
E
Q15
Q14
Q13
Q12
Q11
Q10
Q9
Q8
VSS
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
G
Figure 2B. LCC Pin Connections
1 44
Q12
Q11
Q10
Q9
Q8
VSS
NC
Q7
Q6
Q5
Q4
12
M27V402
34
A13
A12
A11
A10
A9
VSS
NC
A8
A7
A6
A5
23
Q3
Q2
Q1
Q0
G
NC
A0
A1
A2
A3
A4
Figure 2A. DIP Pin Connections
AI01820
AI01862
Warning: NC = Not Connected.
Figure 2C. TSOP Pin Connections
A9
A10
A11
A12
A13
A14
A15
A16
A17
VCC
VPP
E
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
1
10
11
20
40
M27V402
(Normal)
31
30
21
AI01821
2/15
VSS
A8
A7
A6
A5
A4
A3
A2
A1
A0
G
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
VSS
For applications where the content is programmed
only one time and erasure is not required, the
M27V256 is offered in PDIP40, PLCC44 and
TSOP40 (10 x 20 mm) packages.
DEVICE OPERATION
The operating modes of the M27V402 are listed in
the Operating Modes table. A single power supply
is required in the read mode. All inputs are TTL
levels except for VPP and 12V on A9 for Electronic
Signature.
Read Mode
The M27V402 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G) is the output control and should
be used to gate data to the output pins,
independent of device selection. Assuming that
the addresses are stable, the address access time
(tAVQV) is equal to the delay from E to output
(tELQV). Data is available at the output after a delay
of t GLQV from the falling edge of G, assuming that
E has been low and the addresses have been
stable for at least tAVQV-t GLQV.
M27V402
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
Ambient Operating Temperature (3)
–40 to 125
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
VIO (2)
Input or Output Voltage (except A9)
–2 to 7
V
Supply Voltage
–2 to 7
V
–2 to 13.5
V
–2 to 14
V
TA
VCC
VA9 (2)
A9 Voltage
Program Supply Voltage
VPP
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns.
3. Depends on range.
Table 3. Operating Modes
E
G
A9
VPP
Q0-Q15
Read
VIL
V IL
X
V CC or VSS
Data Out
Output Disable
VIL
VIH
X
V CC or VSS
Hi-Z
VIL Pulse
VIH
X
VPP
Data In
Verify
VIH
V IL
X
VPP
Data Out
Program Inhibit
VIH
VIH
X
VPP
Hi-Z
Standby
VIH
X
X
V CC or VSS
Hi-Z
Electronic Signature
VIL
V IL
VID
VCC
Codes
Mode
Program
Note: X = VIH or VIL, VID = 12V ± 0.5V.
Table 4. Electronic Signature
Identifier
A0
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
Hex Data
Manufacturer’s Code
VIL
0
0
1
0
0
0
0
0
20h
Device Code
VIH
1
0
0
0
1
1
0
1
8Dh
Standby Mode
The M27V402 has a standby mode which reduces
the supply current from 20mA to 20µA with low
voltage operation VCC ≤ 3.6V, see Read Mode DC
Characteristics table for details. The M27V402 is
placed in the standby mode by applying a CMOS
high signal to the E input. When in the standby
mode, the outputs are in a high impedance state,
independent of the G input.
3/15
M27V402
Table 5. AC Measurement Conditions
High Speed
Standard
Input Rise and Fall Times
≤ 10ns
≤ 20ns
Input Pulse Voltages
0 to 3V
0.4V to 2.4V
1.5V
0.8V and 2V
Input and Output Timing Ref. Voltages
Figure 3. AC Testing Input Output Waveform
Figure 4. AC Testing Load Circuit
1.3V
High Speed
1N914
3V
1.5V
3.3kΩ
0V
DEVICE
UNDER
TEST
Standard
2.4V
OUT
CL
2.0V
0.8V
0.4V
AI01822
CL = 30pF for High Speed
CL = 100pF for Standard
CL includes JIG capacitance
AI01823B
Table 6. Capacitance (1) (TA = 25 °C, f = 1 MHz)
Symbol
C IN
COUT
Parameter
Input Capacitance
Output Capacitance
Test Condit ion
Min
Max
Unit
VIN = 0V
6
pF
VOUT = 0V
12
pF
Note: Sampled only, not 100% tested.
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, the product features a 2 line control function which accommodates the use of multiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
4/15
For the most efficient use of these two control
lines, E should be decoded and used as the primary device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselected memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
M27V402
Table 7. Read Mode DC Characteristics (1)
(TA = 0 to 70°C, –20 to 70°C, –20 to 85°C or –40 to 85°C; VCC = 3.3V ± 10%; VPP = VCC)
Symbol
Parameter
Test Condition
Min
Max
Unit
0V ≤ VIN ≤ V CC
±10
µA
0V ≤ VOUT ≤ VCC
±10
µA
E = VIL, G = VIL, IOUT = 0mA,
f = 5MHz, VCC = 3.6V
20
mA
E = VIH
1
mA
E > VCC – 0.2V, VCC = 3.6V
20
µA
VPP = VCC
10
µA
ILI
Input Leakage Current
ILO
Output Leakage Current
ICC
Supply Current
ICC1
Supply Current (Standby) TTL
ICC2
Supply Current (Standby) CMOS
IPP
Program Current
VIL
Input Low Voltage
–0.3
0.8
V
VIH (2)
Input High Voltage
2
VCC + 1
V
VOL
Output Low Voltage
0.4
V
VOH
IOL = 2.1mA
Output High Voltage TTL
IOH = –400µA
2.4
V
Output High Voltage CMOS
IOH = –100µA
VCC–0.7V
V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
2. Maximum DC voltage on Output is VCC +0.5V.
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, ICC, has three segments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
the transient current peaks is dependent on the
output capacitive and inductive loading of the device.
The associated transient voltage peaks can be
suppressed by complying with the two line output
control and by properly selected decoupling capacitors. It is recommended that a 0.1µF ceramic
capacitor be used on every device between VCC
and VSS. This should be a high frequency capacitor of low inherent inductance and should be
placed as close to the device as possible. In addition, a 4.7µF bulk electrolytic capacitor should be
used between VCC and VSS for every eight devices. The bulk capacitor should be located near the
power supply connection point.The purpose of the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M27V402 are in the ’1’
state. Data is introduced by selectively programming ’0’s into the desired bit locations. Although
only ’0’s will be programmed, both ’1’s and ’0’s can
be present in the data word. The only way to
change a ’0’ to a ’1’ is by die exposure to ultraviolet
light (UV EPROM). The M27V402 is in the programming mode when VPP input is at 12.75V, G ia
at VIH and E is pulsed to VIL. The data to be programmed is applied to 16 bits in parallel to the data
output pins.
The levels required for the address and data inputs are TTL. VCC is specified to be 6.25V ±
0.25V.
5/15
M27V402
Table 8. Read Mode AC Characteristics (1)
(TA = 0 to 70°C, –20 to 70°C, –20 to 85°C or –40 to 85°C; VCC = 3.3V ± 10%; VPP = VCC)
M27V402
Symbol
Alt
Parameter
Test Condition
-120
Min
tAVQV
tACC
Address Valid to
Output Valid
tELQV
tCE
tGLQV
-150
Max
Min
-200
Max
Min
Unit
Max
E = VIL, G = VIL
120
150
200
ns
Chip Enable Low to
Output Valid
G = VIL
120
150
200
ns
tOE
Output Enable Low to
Output Valid
E = VIL
60
80
100
ns
tEHQZ (2)
tDF
Chip Enable High to
Output Hi-Z
G = VIL
0
50
0
50
0
50
ns
tGHQZ (2)
tDF
Output Enable High to
Output Hi-Z
E = VIL
0
50
0
50
0
50
ns
tAXQX
tOH
Address Transition to
Output Transition
E = VIL, G = VIL
5
0
0
ns
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
Figure 5. Read Mode AC Waveforms
VALID
A0-A17
tAVQV
tAXQX
E
tGLQV
tEHQZ
G
tELQV
Q0-Q15
tGHQZ
Hi-Z
DATA OUT
AI00731
6/15
M27V402
Table 9. Programming Mode DC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Symbol
Parameter
Test Conditio n
Min
0 ≤ V IN ≤ VCC
Max
Unit
±10
µA
50
mA
50
mA
ILI
Input Leakage Current
ICC
Supply Current
IPP
Program Current
V IL
Input Low Voltage
–0.3
0.8
V
VIH
Input High Voltage
2
VCC + 0.5
V
VOL
Output Low Voltage
0.4
V
VOH
Output High Voltage TTL
VID
A9 Voltage
E = VIL
IOL = 2.1mA
IOH = –400µA
2.4
V
11.5
12.5
V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
Table 10. Programming Mode AC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Symbol
Alt
Parameter
Test Condition
Min
Max
tAVEL
tAS
Address Valid to Chip Enable Low
2
µs
tQVEL
tDS
Input Valid to Chip Enable Low
2
µs
tVPHEL
tVPS
VPP High to Chip Enable Low
2
µs
t VCHEL
tVCS
VCC High to Chip Enable Low
2
µs
tELEH
tPW
Chip Enable Program Pulse Width
95
tEHQX
tDH
Chip Enable High to Input Transition
2
µs
tQXGL
tOES
Input Transition to Output Enable Low
2
µs
tGLQV
tOE
Output Enable Low to Output Valid
tGHQZ
tDFP
Output Enable High to Output Hi-Z
0
tGHAX
tAH
Output Enable High to Address
Transition
0
105
Unit
µs
100
ns
130
ns
ns
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
2. Sampled only, not 100% tested.
7/15
M27V402
Figure 6. Programming and Verify Modes AC Waveforms
VALID
A0-A17
tAVEL
Q0-Q15
DATA OUT
DATA IN
tQVEL
tEHQX
VPP
tVPHEL
tGLQV
tGHQZ
VCC
tVCHEL
tGHAX
E
tELEH
tQXGL
G
PROGRAM
VERIFY
AI00730
Figure 7. Programming Flowchart
VCC = 6.25V, VPP = 12.75V
n=0
E = 100µs Pulse
NO
++n
= 25
YES
FAIL
NO
VERIFY
++ Addr
YES
Last
Addr
NO
YES
CHECK ALL WORDS
1st: VCC = 6V
2nd: VCC = 4.2V
AI00726C
8/15
PRESTO II Programming Algorithm
PRESTO II Programming Algorithm allows the
whole array to be programmed with a guaranteed
margin, in a typical time of 26.5 seconds. Programming with PRESTO II consists of applying a
sequence of 100µs program pulses to each byte
until a correct verify occurs (see Figure 7). During
programming and verify operation, a MARGIN
MODE circuit is automatically activated in order to
guarantee that each cell is programmed with
enough margin. No overprogram pulse is applied
since the verify in MARGIN MODE at V CC much
higher than 3.6V provides necessary margin to
each programmed cell.
Program Inhibit
Programming of multiple M27V402s in parallel
with different data is also easily accomplished. Except for E, all like inputs including G of the parallel
M27V402 may be common. A TTL low level pulse
applied to a M27V402’s E input, with VPP at
12.75V, will program that M27V402. A high level E
input inhibits the other M27V402s from being programmed.
Program Verify
A verify (read) should be performed on the programmed bits to determine that they were correctly programmed. The verify is accomplished with G
at VIL, E at VIH, VPP at 12.75V and VCC at 6.25V.
M27V402
On-Board Programming
The M27V402 can be directly programmed in the
application circuit. See the relevant Application
Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25°C ± 5°C ambient temperature range that is required when programming the M27V402. To activate the ES mode,
the programming equipment must force 11.5V to
12.5V on address line A9 of the M27V402 with
VPP=VCC=5V. Two identifier bytes may then be
sequenced from the device outputs by toggling address line A0 from VIL to VIH. All other address
lines must be held at VIL during Electronic Signature mode. Byte 0 (A0=VIL) represents the manufacturer code and byte 1 (A0=VIH) the device
identifier code. For the STMicroelectronics
M27V402, these two identifier bytes are given in
Table 4 and can be read-out on outputs Q0 to Q7.
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristics of the M27V402 is
such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000Å. It should be noted that sunlight
and some type of fluorescent lamps have wavelengths in the 3000-4000Å range. Research
shows that constant exposure to room level fluorescent lighting could erase a typical M27V402 in
about 3 years, while it would take approximately 1
week to cause erasure when exposed to direct
sunlight. If the M27V402 is to be exposed to these
types of lighting conditions for extended periods of
time, it is suggested that opaque labels be put over
the M27V402 window to prevent unintentional erasure. The recommended erasure procedure for
the M27V402 is exposure to short wave ultraviolet
light which has a wavelength of 2537Å. The integrated dose (i.e. UV intensity x exposure time) for
erasure should be a minimum of 15 W-sec/cm2.
The erasure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with
12000 µW/cm2 power rating. The M27V402
should be placed within 2.5 cm (1 inch) of the lamp
tubes during the erasure. Some lamps have a filter
on their tubes which should be removed before
erasure.
9/15
M27V402
Table 11. Ordering Information Scheme
Example:
M27V402
-120 K
1
TR
Device Type
Speed
-120 = 120 ns
-150 = 150 ns
-200 = 200 ns
Package
F = FDIP40W
B = PDIP40
K = PLCC44
N = TSOP40: 10 x 20mm
Temperature Range
1 = –0 to 70°C
4 = –20 to 70°C
5 = –20 to 85°C
6 = –40 to 85°C
Optio n
TR =Tape & Reel Packing
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you.
10/15
M27V402
Table 12. FDIP40W - 40 pin Ceramic Frit-seal DIP, with window, Package Mechanical Data
Symb
mm
Typ
inches
Min
Max
A
Typ
Min
5.72
Max
0.225
A1
0.51
1.40
0.020
0.055
A2
3.91
4.57
0.154
0.180
A3
3.89
4.50
0.153
0.177
B
0.41
0.56
0.016
0.022
B1
–
–
–
–
C
1.45
0.23
0.30
0.009
0.012
D
51.79
52.60
2.039
2.071
–
–
1.900
–
–
0.600
D2
48.26
E
15.24
E1
–
–
13.06
13.36
0.057
–
–
0.514
0.526
e
2.54
–
–
0.100
–
–
eA
14.99
–
–
0.590
–
–
eB
16.18
18.03
0.637
0.710
L
3.18
S
1.52
2.49
–
–
α
4°
11°
N
40
∅
7.62
0.125
0.060
0.098
–
–
4°
11°
0.300
40
Figure 8. FDIP40W - 40 pin Ceramic Frit-seal DIP, with window, Package Outline
A2
A3
A1
B1
B
A
L
e
α
eA
D2
C
eB
D
S
N
∅
E1
E
1
FDIPW-a
Drawing is not to scale.
11/15
M27V402
Table 13. PDIP40 - 40 pin Plastic DIP, 600 mil width, Package Mechanical Data
mm
Symb
inches
Typ
Min
Max
Typ
Min
Max
A
4.45
–
–
0.175
–
–
A1
0.64
0.38
–
0.025
0.015
–
A2
3.56
3.91
0.140
0.154
B
0.38
0.53
0.015
0.021
B1
1.14
1.78
0.045
0.070
C
0.20
0.31
0.008
0.012
D
51.78
52.58
2.039
2.070
–
–
–
–
E
14.80
16.26
0.583
0.640
E1
13.46
13.99
0.530
0.551
D2
48.26
1.900
e1
2.54
–
–
0.100
–
–
eA
15.24
–
–
0.600
–
–
eB
15.24
17.78
0.600
0.700
L
3.05
3.81
0.120
0.150
S
1.52
2.29
0.060
0.090
α
0°
15°
0°
15°
N
40
40
Figure 9. PDIP40 - 40 pin Plastic DIP, 600 mil width, Package Outline
A2
A1
B1
B
A
L
e1
α
eA
D2
C
eB
D
S
N
E1
E
1
PDIP
Drawing is not to scale.
12/15
M27V402
Table 14. PLCC44 - 44 lead Plastic Leaded Chip Carrier, square, Package Mechanical Data
mm
inches
Symb
Typ
Min
Max
A
4.20
A1
Min
Max
4.70
0.165
0.185
2.29
3.04
0.090
0.120
A2
–
0.51
–
0.020
B
0.33
0.53
0.013
0.021
B1
0.66
0.81
0.026
0.032
D
17.40
17.65
0.685
0.695
D1
16.51
16.66
0.650
0.656
D2
14.99
16.00
0.590
0.630
E
17.40
17.65
0.685
0.695
E1
16.51
16.66
0.650
0.656
E2
14.99
16.00
0.590
0.630
–
–
–
–
0.00
0.25
0.000
0.010
–
–
–
–
e
1.27
F
R
0.89
N
Typ
0.050
0.035
44
CP
44
0.10
0.004
Figure 10. PLCC44 - 44 lead Plastic Leaded Chip Carrier, square, Package Outline
D
D1
A1
A2
1 N
B1
E1 E
Ne
e
D2/E2
F
B
0.51 (.020)
1.14 (.045)
A
Nd
R
CP
PLCC
Drawing is not to scale.
13/15
M27V402
Table 15. TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 20mm, Package Mechanical Data
mm
inches
Symb
Typ
Min
Max
A
Typ
Min
1.20
Max
0.047
A1
0.05
0.15
0.002
0.006
A2
0.95
1.05
0.037
0.041
B
0.17
0.27
0.007
0.011
C
0.10
0.21
0.004
0.008
D
19.80
20.20
0.780
0.795
D1
18.30
18.50
0.720
0.728
E
9.90
10.10
0.390
0.398
-
-
-
-
L
0.50
0.70
0.020
0.028
α
0°
5°
0°
5°
N
40
e
0.50
0.020
40
CP
0.10
0.004
Figure 11. TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 20mm, Package Outline
A2
1
N
e
E
B
N/2
D1
A
CP
D
DIE
C
TSOP-a
Drawing is not to scale
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A1
α
L
M27V402
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