DMPH6050SK3Q Q MOSFET 60V +175°C P-CHANNEL ENHANCEMENT MODE Green Product Summary RDS(ON) max ID max TC = +25°C 50mΩ @ VGS = -10V -23.6A 70mΩ @ VGS = -4.5V -20A BVDSS ADVANCED INFORMATION -60V Features Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low Qg – Minimizes Switching Loss Low RDS(ON) – Minimizes On State Loss Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Engine Management Systems Body Control Electronics DC-DC Converters Case: TO252 (DPAK) Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.315 grams (Approximate) TO252 D G S Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMPH6050SK3Q-13 Notes: Case TO252 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information TO252 H6050S YYWW DMPH6050SK3Q Document number: DS37293 Rev. 4 - 2 =Manufacturer’s Marking H6050S = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 15 = 2015) WW = Week Code (01 to 53) 1 of 7 www.diodes.com July 2015 © Diodes Incorporated DMPH6050SK3Q Q Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage ADVANCED INFORMATION Continuous Drain Current (Note 7) VGS = -10V TC = +25°C TC = +70°C TA = +25°C TA = +70°C Steady State Steady State Value -60 ±20 -23.6 -19 ID A -7.2 -6.0 -40 -3.8 -25 31 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 7) Avalanche Current (Note 8) L = 0.1mH Avalanche Energy (Note 8) L = 0.1mH Units V V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Steady State Steady State Symbol PD RJA PD RJA RJC TJ, TSTG Value 1.9 80 3.8 39 3 -55 to +175 Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250μA VDS = -60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) -3 50 70 -1.2 V Static Drain-Source On-Resistance -1 — mΩ VDS = VGS, ID = -250μA VGS = -10V, ID = -7A VGS = -4.5V, ID = -7A VGS = 0V, IS = -1A Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD — — — — -0.7 Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — 1,377 87 68 12 12 25 3.8 4.9 5.3 8.6 49.4 29.7 14.2 — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns nS — 7.9 — nC V Test Condition VDS = -30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -30V, ID = -5A VDS = -30V, VGS = -10V, RG = 3Ω, ID = -5A IF = -5A, di/dt = 100A/μs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMPH6050SK3Q Document number: DS37293 Rev. 4 - 2 2 of 7 www.diodes.com July 2015 © Diodes Incorporated 30.0 DMPH6050SK3Q Q 30 VGS = -10V VDS = -5.0V VGS = -5.0V 25.0 25 ID, DRAIN CURRENT (A) VGS = -4.5V ID, DRAIN CURRENT (A) VGS = -4.0V 15.0 VGS = -3.5V 10.0 20 15 TA = 175C 10 TA = 150 C TA = 85C TA = 125 C 5.0 0.0 0 TA = -55C VGS = -3.0V 0.5 1 1.5 2 2.5 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.100 0.090 0.080 0.070 0.060 VGS = -4.5V 0.050 0.040 VGS = -10V 0.030 0.020 0.010 0.000 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TA = 25C 5 VGS = -2.5V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.3 0.25 0.2 ID = -7A 0.15 ID = -5A 0.1 0.05 30 0 0 2 4 6 8 10 12 14 16 18 V GS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 20 2.4 0.12 VGS = -4.5V 2.2 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCED INFORMATION 20.0 TA = 175C TA = 150C 0.08 TA = 125C TA = 85C 0.06 TA = 25C 0.04 TA = -55C 0.02 2 1.8 VGS = -10V ID = -10A 1.6 1.4 1.2 1 VGS = -4.5V ID = -5A 0.8 0.6 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMPH6050SK3Q Document number: DS37293 Rev. 4 - 2 30 3 of 7 www.diodes.com 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature July 2015 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () 3 0.09 0.08 VGS = -4.5V ID = -5A 0.07 0.06 0.05 VGS = -10V ID = -10A 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 30 25 2.5 -ID = 250µA 2 -I D = 1mA 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 100000 TA = 175°C IDSS, LEAKAGE CURRENT (nA) -IS, SOURCE CURRENT (A) 10000 20 TA= 175C TA= 150C 15 TA= 125C 10 TA= 85C TA= 25C 5 T A= -55C TA = 150°C 1000 0 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 1 0.1 0 5 10 15 20 25 30 35 40 45 50 55 60 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Drain-Source Leakage Current vs. Voltage 10 V GS, GATE-SOURCE VOLTAGE (V) f = 1MHz CT, JUNCTION CAPACITANCE (pF) ADVANCED INFORMATION 0.1 DMPH6050SK3Q Q Ciss 1000 Coss 100 Crss 10 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Typical Junction Capacitance DMPH6050SK3Q Document number: DS37293 Rev. 4 - 2 40 8 VDS = -30V ID = -5A 6 4 2 0 0 4 of 7 www.diodes.com 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 12 Gate-Charge Characteristics 25 July 2015 © Diodes Incorporated r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthjc (t) = r(t) * Rthjc Single Pulse 0.001 0.000001 Rthjc = 2.8°C/W Duty Cycle, D = t1/ t2 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 100 PW = 10µs R DS(on) Limited ID, DRAIN CURRENT (A) ADVANCED INFORMATION 1 DMPH6050SK3Q Q PW = 1µs 10 PW = 1s PW = 100ms PW = 1ms PW = 100µ s 1 TJ (m ax ) = 175°C TA = 25°C V GS = 10V Single Pulse DUT on 1 * MRP Board 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 14 SOA, Safe Operation Area DMPH6050SK3Q Document number: DS37293 Rev. 4 - 2 5 of 7 www.diodes.com July 2015 © Diodes Incorporated DMPH6050SK3Q Q Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E A b3 D c A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a ADVANCED INFORMATION 7°±1° L3 L A1 TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm 2.74REF Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMPH6050SK3Q Document number: DS37293 Rev. 4 - 2 6 of 7 www.diodes.com July 2015 © Diodes Incorporated DMPH6050SK3Q Q IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMPH6050SK3Q Document number: DS37293 Rev. 4 - 2 7 of 7 www.diodes.com July 2015 © Diodes Incorporated