ACE ACE3926E Dual n-channel 20-v mosfet Datasheet

ACE3926E
Dual N-Channel 20-V MOSFET
Description
The ACE3926E utilize a high cell density trench process to provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
Features
•
•
•
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications
•
•
•
Power Routing
Li Ion Battery Packs
Level Shifting and Driver Circuits
Absolute Maximum Ratings
Parameter
Symbol
Limit
Units
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
TA=25℃
Continuous Drain Current a
ID
TA=70℃
Pulsed Drain Current b
Continuous Source Current (Diode Conduction)
a
TA=25℃
Power Dissipation a
TA=70℃
Operating temperature / storage temperature
13
10
A
IDM
50
A
IS
7
A
PD
2.5
1.5
TJ/TSTG -55~150
W
℃
THERMAL RESISTANCE RATINGS
Symbol
Parameter
Maximum Junction-to-Ambient
a
t <= 10 sec
Steady State
RθJA
Maximum
83
120
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1
1
ACE3926E
Dual N-Channel 20-V MOSFET
Packaging Type
DFN3*3-8L
Ordering information
ACE3926E NN + H
Halogen - free
Pb - free
NN : DFN3*3-8L
VER 1.1
2
ACE3926E
Dual N-Channel 20-V MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 uA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ±12 V
±10
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
1
IDSS
On-State Drain Current
Drain-Source On-Resistance
A
A
Diode Forward Voltage
Min
Typ
VDS = 5 V, VGS = 4.5 V
RDS(ON)
Max Unit
0.4
V
10
VDS = 16V, VGS = 0 V, TJ = 55°C
ID(on)
A
Forward Transconductance
Test Conditions
Static
20
nA
uA
A
VGS = 4.5 V ID = 2 A
10
VGS = 2.5 V, ID =1.6 A
14
mΩ
gFS
VDS =15 V, ID = 2 A
3
S
VSD
IS = 3.5 A, VGS = 0 V
0.8
V
Dynamic
b
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
3.7
Turn-On Delay Time
td(on)
178
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
902
Input Capacitance
Ciss
1225
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
15
VDS = 10V, VGS = 4.5 V, ID = 2 A
VDS = 10 V, RL = 5 Ω,
ID = 2 A, VGEN = 4.5 V , RGEN = 6 Ω,
VDS = 15 V, VGS = 0 V, f = 1 Mhz
1.9
nC
332
1939
151
ns
pF
123
Note :
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing
VER 1.1
3
ACE3926E
Dual N-Channel 20-V MOSFET
Typical Performance Characteristics
ID-Drain Current (A)
1.On-Resistance vs. Drain Current
VGS - Gate-to-Source Voltage (V)
2. Transfer Characteristics
VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
VGS - Gate-to-Source Voltage (V)
4. Drain-to-Source Forward Voltage
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
VDS-Drain-to-Source Voltage (V)
6. Capacitance
VER 1.1
4
ACE3926E
Dual N-Channel 20-V MOSFET
Typical Performance Characteristics
Qg - Total Gate Charge (nC)
7. Gate Charge
VDS (V)
8. Normalized On-Resistance Vs
Junction Temperature
VDS Drain to Source Voltage (V)
9. Safe Operating Area
t1 TIME (sec)
10.Single Pulse Maximum Power Dissipation
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
VER 1.1
5
ACE3926E
Dual N-Channel 20-V MOSFET
Packing Information
DFN3*3-8L
SYMBOLS
A
A1
b
c
D
E
E1
e
L
L1
Θ1
DIMENSIONS IN MILLIMETERS
MIN
NOM
MAX
0.700
0.80
0.900
0.00
0.05
0.24
0.30
0.35
0.08
0.152
0.25
2.90BSC
2.80BSC
2.30BSC
0.65BSC
0.20
0.375
0.450
0
0.100
0
10
12
DIENSIONS IN INCHES
MIN
NOM
MAX
0.0276
0.0315
0.0354
0.000
0.002
0.009
0.012
0.014
0.003
0.006
0.010
0.114BSC
0.110BSC
0.091BSC
0.026BSC
0.008
0.0148
0.0177
0
0.004
0
10
12
Unit: mm
VER 1.1
6
ACE3926E
Dual N-Channel 20-V MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
7
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