Fairchild FQT4N20LTF N-channel qfetâ® mosfet 200 v, 0.85 a, 1.40 î© Datasheet

March 2013
N-Channel QFET® MOSFET
200 V, 0.85 A, 1.40 Ω
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
• 0.85 A, 200 V, RDS(on)=1.35 Ω(Typ.)@VGS=10 V, ID=0.425 A
• Low Gate Charge (Typ. 4 nC)
• Low Crss (Typ. 6 pF)
• 100% Avalanche Tested
• Low Level Gate Drive Requirments Allowing Direct Operation
From Logic Drives
D
!
D
"
G!
S
G
Absolute Maximum Ratings
Symbol
VDSS
ID
! "
"
"
SOT-223
!
S
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 70°C)
FQT4N20L
200
Unit
V
0.85
A
0.68
A
3.4
A
IDM
Drain Current
VGSS
Gate-Source Voltage
± 20
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
52
mJ
IAR
Avalanche Current
(Note 1)
0.85
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
0.22
5.5
2.2
0.018
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient *
Typ
--
Max
57
Unit
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
FQT4N20L Rev. C0
www.fairchildsemi.com
FQT4N20L N-Channel MOSFET
FQT4N20L
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
200
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.16
VDS = 200 V, VGS = 0 V
--
--
1
µA
VDS = 160 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1.0
--
2.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.425 A
VGS = 5 V, ID = 0.425 A
--
1.10
1.13
1.35
1.40
Ω
gFS
Forward Transconductance
VDS = 30 V, ID = 0.425 A
--
1.42
--
S
--
240
310
pF
--
36
45
pF
--
6
8
pF
ns
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100 V, ID = 3.8 A,
RG = 25 Ω
(Note 4, 5)
VDS = 160 V, ID = 3.8 A,
VGS = 5 V
(Note 4, 5)
--
7
25
--
70
150
ns
--
15
40
ns
--
40
90
ns
--
4.0
5.2
nC
--
1.0
--
nC
--
1.9
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
0.85
ISM
--
--
3.4
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 0.85 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 3.8 A,
dIF / dt = 100 A/µs
(Note 4)
--
90
--
ns
--
0.25
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 108mH, IAS = 0.85A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 3.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
FQT4N20L Rev. C0
www.fairchildsemi.com
FQT4N20L N-Channel MOSFET
Electrical Characteristics
0
ID , Drain Current [A]
10
Bottom :
VGS
10 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
ID , Drain Current [A]
Top :
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
0
10
150℃
25℃
-55℃
※ Notes :
1. VDS = 30V
2. 250μ s Pulse Test
-1
10
-1
-1
0
10
10
1
10
10
0
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
6
IDR , Reverse Drain Current [A]
RDS(on) , [ Ω ]
Drain-Source On-Resistance
8
VGS = 5 V
0
10
VGS = 10V
4
2
0
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
-1
0
2
4
6
8
10
0.2
0.4
0.6
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
450
10
Capacitance [pF]
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
150
100
Crss
50
VGS, Gate-Source Voltage [V]
Ciss
250
200
1.2
1.4
1.6
1.8
12
VDS = 40V
350
300
1.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
400
0.8
VSD , Source-Drain Voltage [V]
VDS = 100V
8
VDS = 160V
6
4
2
※ Note : ID = 3.8 A
0
-1
10
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
FQT4N20L Rev. C0
0
0
1
2
3
4
5
6
7
8
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
FQT4N20L N-Channel MOSFET
Typical Characteristics
(Continued)
3.0
1.2
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
RDS(ON) , (Normalized)
Drain-Source On-Resistance
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 0.425 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.0
1
Operation in This Area
is Limited by R DS(on)
10
10 ms
100 ms
ID, Drain Current [A]
ID, Drain Current [A]
0.8
100 µs
1 ms
0
10
0.6
DC
-1
10
0.4
※ Notes :
-2
10
0.2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.0
25
-3
10
-1
10
0
1
10
2
10
10
50
75
Figure 9. Maximum Safe Operating Area
125
150
Figure 10. Maximum Drain Current
vs. Case Temperature
2
D = 0 .5
10
※ N o te s :
1 . Z θ J C( t ) = 5 7 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 / t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .2
1
0 .1
0 .0 5
10
0 .0 2
0
PDM
0 .0 1
θ JC
(t), T h e rm a l R e s p o n s e
10
100
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
t1
Z
s in g le p u ls e
10
t2
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
FQT4N20L Rev. C0
www.fairchildsemi.com
FQT4N20L N-Channel MOSFET
Typical Characteristics
FQT4N20L N-Channel MOSFET
Gate Charge Test Circuit & Waveform
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
5V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
5V
10%
td(on)
tr
td(off)
t on
t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2001 Fairchild Semiconductor Corporation
FQT4N20L Rev. C0
ID (t)
VDS (t)
VDD
tp
Time
www.fairchildsemi.com
FQT4N20L N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2001 Fairchild Semiconductor Corporation
FQT4N20L Rev. C0
www.fairchildsemi.com
FQT4N20L N-Channel MOSFET
Package Dimensions
3.00 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.89)
(0.95)
(0.46)
1.60 ±0.20
2.30 TYP
©2001 Fairchild Semiconductor Corporation
FQT4N20L Rev. C0
0.70 ±0.10
(0.95)
7.00 ±0.30
(0.60)
+0.04
0.06 –0.02
(0.60)
3.50 ±0.20
1.75 ±0.20
MAX1.80
0.65 ±0.20
0.08MAX
SOT-223
°
10
+0.10
0.25 –0.05
0°~
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2001 Fairchild Semiconductor Corporation
FQT4N20L Rev. C0
www.fairchildsemi.com
FQT4N20L N-Channel MOSFET
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