DMP2010UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI V(BR)DSS -20V Features RDS(ON) Max ID Max TC = +25°C Low RDS(ON) – Ensures On State Losses Are Minimized -42A Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) 9.5mΩ @ VGS = -4.5V 12.5mΩ @ VGS = -2.5V Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications Case: POWERDI®3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) Load Switch Power Management Functions POWERDI®3333-8 D Pin 1 S S S G G D D D S D Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMP2010UFG-7 DMP2010UFG-13 Notes: Case POWERDI®3333-8 POWERDI®3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW ADVANCE INFORMATION INFORMATION ADVANCE NEW PRODUCT Product Summary S49 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 = 2015) WW = Week Code (01 to 53) S49 POWERDI is a registered trademark of Diodes Incorporated. DMP2010UFG Document number: DS37848 Rev. 2 - 2 1 of 7 www.diodes.com September 2015 © Diodes Incorporated DMP2010UFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION INFORMATION ADVANCE NEW PRODUCT Characteristic Symbol Drain-Source Voltage Gate-Source Voltage VDSS VGSS TA = +25°C TC = +25°C Continuous Drain Current, VGS = -4.5V (Note 6) ID Maximum Continuous Body Diode Forward Current (Note 6) Value -20 ±10 Unit V V -12.7 -42 A IS IDM -3 A Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) -80 A Avalanche Current, L=0.1mH (Note 7) IAS -35 A Avalanche Energy, L=0.1mH (Note 7) EAS 64 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Symbol PD RJA PD RJA RJC TJ, TSTG Steady State Steady State Value 0.9 136 2.3 54 4 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 — — — — — — -1 ±100 µA VGS(TH) Static Drain-Source On-Resistance RDS(ON) VSD -0.4 — — — — — — -0.7 -1.2 9.5 12.5 -1.2 Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 3350 527 460 10.7 50 103 6.0 14.4 9.7 30 235 110 64 60 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V nA V mΩ V Test Condition VGS = 0V, ID = -1mA VDS = -16V, VGS = 0V VGS = ±8V, VDS = 0V VDS = VGS, ID = -250µA VGS = -4.5V, ID = -3.6A VGS = -2.5V, ID = -3.6A VGS = 0V, IS = -10A pF VDS = -10V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -10V, ID = -3.6A ns VDD = -10V, VGS = -4.5V, RGEN = 4.7Ω, ID = -3.6A ns nC IF = -3.6A, di/dt = 100A/µs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMP2010UFG Document number: DS37848 Rev. 2 - 2 2 of 7 www.diodes.com September 2015 © Diodes Incorporated DMP2010UFG 30 30.0 VGS= -2.0V VDS= -5V 25 20.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS= -2.5V VGS= -3.0V VGS= -4.0V 15.0 VGS= -4.5V 10.0 VGS= -1.5V 5.0 20 15 10 85℃ 125℃ 5 25℃ 150℃ VGS= -1.2V 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0 2 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.015 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 -55℃ 0 0.0 0.012 VGS= -2.5V 0.009 VGS= -4.5V 0.006 0.003 0.02 0.018 0.016 0.014 0.012 0.01 ID= -3.6A 0.008 0.006 0.004 0.002 0 0 0 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 10 2.5 0.015 VGS= -4.5V 0.012 85℃ 125℃ 150℃ 0.009 25℃ -55℃ 0.006 0.003 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION INFORMATION ADVANCE NEW PRODUCT 25.0 2 VGS= -4.5V, ID= -5A 1.5 1 VGS= -2.5V, ID= -5A 0.5 0 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature POWERDI is a registered trademark of Diodes Incorporated. DMP2010UFG Document number: DS37848 Rev. 2 - 2 3 of 7 www.diodes.com September 2015 © Diodes Incorporated 0.015 VGS= -2.5V, ID= -5A 0.01 VGS= -4.5V, ID= -5A 0.005 1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.02 1 ID= -1mA 0.8 ID= -250μA 0.6 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 30 100000 150℃ IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) 25 VGS=0V, TJ=125℃ 20 VGS=0V, TJ=150℃ 15 VGS=0V, TJ=85℃ 10 VGS=0V, TJ=25℃ 5 10000 125℃ 1000 85℃ 100 25℃ 10 1 VGS=0V, TJ=-55℃ 0.1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakage Current vs. Voltage 1.5 10000 10 f=1MHz Ciss 8 VGS (V) CT, JUNCTION CAPACITANCE (pF) ADVANCE INFORMATION INFORMATION ADVANCE NEW PRODUCT DMP2010UFG 1000 Coss 6 VDS= -10V, ID= -3.6A 4 Crss 2 0 100 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Typical Junction Capacitance 20 0 10 20 30 40 50 60 70 80 Qg (nC) Figure 12. Gate Charge 90 100 POWERDI is a registered trademark of Diodes Incorporated. DMP2010UFG Document number: DS37848 Rev. 2 - 2 4 of 7 www.diodes.com September 2015 © Diodes Incorporated DMP2010UFG 100 PW =100μs ID, DRAIN CURRENT (A) 10 PW =1ms 1 PW =10ms PW =100ms TJ(MAX)=150℃ TC=25℃ Single Pulse DUT on 1*MRP board VGS= -4.5V 0.1 0.01 0.01 0.1 PW =1s PW =10s DC 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION INFORMATION ADVANCE NEW PRODUCT RDS(ON) Limited D=0.5 D=0.3 D=0.9 0.1 D=0.7 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA (t)=r(t) * RθJA RθJA=136℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 14. Transient Thermal Resistance POWERDI is a registered trademark of Diodes Incorporated. DMP2010UFG Document number: DS37848 Rev. 2 - 2 5 of 7 www.diodes.com September 2015 © Diodes Incorporated DMP2010UFG Package Outline Dimensions ADVANCE INFORMATION INFORMATION ADVANCE NEW PRODUCT Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A1 A3 A Seating Plane D L(4x) D2 1 Pin #1 ID b2(4x) E E2 e1 8 z(4x) b POWERDI®3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 e 0.65 e1 0.79 0.89 0.84 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm L1(3x) e Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X3 X2 8 Y2 X1 Y1 Y3 Y Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 1 X C POWERDI is a registered trademark of Diodes Incorporated. DMP2010UFG Document number: DS37848 Rev. 2 - 2 6 of 7 www.diodes.com September 2015 © Diodes Incorporated DMP2010UFG ADVANCE INFORMATION INFORMATION ADVANCE NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMP2010UFG Document number: DS37848 Rev. 2 - 2 7 of 7 www.diodes.com September 2015 © Diodes Incorporated