Single P-Channel Trench MOSFET, -30V, -35.6A, 17.0mΩ General Description Features The MDU3605 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. VDS = -30V ID = -35.6A @VGS = -10V RDS(ON) < 17.0mΩ @VGS = -10V < 27.0mΩ @VGS = -5V Applications Load Switch General purpose applications Smart Module for Note PC Battery D D D D D D D D D G S S S G G S S S S PowerDFN56 Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS -30 V VGSS ±25 V o Continuous Drain Current TC=25 C (Silicon limited) (1) -35.6 ID o TA=25 C Pulsed Drain Current IDM -80.0 o TC=25 C Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range A 35.7 PD o TA=25 C A -9.4 W 2.5 EAS 78.1 TJ, Tstg -55~150 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Resistance, Junction-to-Case August. 2011. Version 1.1 1 Symbol Rating RθJA 50 RθJC 3.5 Unit o C/W MagnaChip Semiconductor Ltd. MDU3605– Single P-Channel Trench MOSFET MDU3605 Part Number Temp. Range MDU3605RH -55~150 C o Package Packing RoHS Status PowerDFN56 Tape & Reel Halogen Free Electrical Characteristics (Ta = 25oC unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V -30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.0 -2.0 -3.0 Drain Cut-Off Current IDSS VDS = -30V, VGS = 0V - Gate Leakage Current IGSS VGS = ±25V, VDS = 0V - - ±0.1 VGS = -10V, ID = -8A - 13.5 17.0 VGS = -5V, ID = -8A 20.0 27.0 VDS = -5V, ID = -8A 21.5 - 22.0 - Drain-Source ON Resistance Forward Transconductance RDS(ON) gFS -1 V µA mΩ S Dynamic Characteristics Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Gate Resistance Rg Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time - Qg VDS = -15V, ID = -8A VGS = -10V VDS = -15V, VGS = 0V, f = 1.0MHz f = 1.0MHz VGS = -10V ,VDS = -15V, ID = -8A, RGEN = 3Ω tf - 3.3 - - 4.3 - - 1035 - - 150 - - 260 - - 6.4 - - 12.0 - - 12.4 - - 52.1 - - 8.9 - -1.0 nC pF Ω ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = -1A, VGS = 0V IF = -8A, di/dt = 100A/µs - -0.71 - 30.8 - 26.4 V ns - nC Note : 1. 2. Surface mounted RF4 board with 2oz. Copper. Starting TJ=25°C, L=1.0mH, IAS= -11.0A VDD=-20.0V, VGS=-10.0V. Tested at IAS=-8.5A. August. 2011. Version 1.1 2 MagnaChip Semiconductor Ltd. MDU3605– Single P-Channel Trench MOSFET Ordering Information -10.0V 45 35 40 -5.0V RDS(ON) [mΩ ] -8.0V 30 -ID [A] 30 -6.0V 35 VGS=-4.0V 25 20 VGS=-3.5V 15 25 VGS=-5V 20 VGS=-10V 15 10 10 VGS=-3.0V 5 5 VGS=-2.5V 0 0 1 2 3 4 0 5 0 10 20 -VDS [V] 40 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 40 *Note; ID=-8A *Note ; ID=-8A 35 1.6 30 1.4 1.2 RDS(ON) [mΩ ] RDS(ON), (Normalized) Drain-Source On-Resistance [mΩ ] 30 -ID [A] VGS=-10V 25 20 1.0 15 0.8 10 0.6 -50 5 -25 0 25 50 75 100 125 150 2 3 4 5 TJ, Junction Temperature [℃] 6 7 8 9 10 -VGS [V] Fig.4 On-Resistance Variation with Gate to Source Voltage Fig.3 On-Resistance Variation with Temperature 30 ※ Notes : VGS = 0V * Note ; VDS=-5V -IS, Reverse Drain Current [A] 25 -ID [A] 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 10 0.0 -VGS [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, Source-Drain voltage [V] Fig.5 Transfer Characteristics August. 2011. Version 1.1 1 10 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDU3605– Single P-Channel Trench MOSFET 40 50 1500 * Note :VDS = -15V ID = -8A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 8 Capacitance [pF] 1200 -VGS [V] 6 4 2 Ciss 900 600 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 300 Crss 0 0 5 10 15 20 25 0 30 0 5 10 15 -Qg [nC] Fig.7 Gate Charge Characteristics 10 3 10 2 10 1 20 25 30 -VDS [V] Fig.8 Capacitance Characteristics 50 30 10 ms 100 ms Operation in This Area is Limited by R DS(on) 10 -ID [A] -ID [A] 40 20 1s 10s DC 0 10 Single Pulse TJ=Max Rated TC=25℃ 10 -1 10 -1 10 0 10 1 10 0 2 25 50 75 100 125 150 TC [℃] -VDS [V] Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Ambient Temperature 1 10 Zθ JC, Thermal Response D=0.5 0 0.2 10 0.1 0.05 0.02 -1 10 0.01 single pulse -2 * Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [s] Fig.11 Transient Thermal Response Curve August. 2011. Version 1.1 4 MagnaChip Semiconductor Ltd. MDU3605– Single P-Channel Trench MOSFET 10 PowerDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified Dimension MILLIMETERS Min A 0.90 1.10 b 0.33 0.51 C 0.20 0.34 D1 4.50 5.10 D2 - 4.22 E 5.90 6.30 E1 5.50 6.10 E2 - 4.30 e August. 2011. Version 1.1 5 Max 1.27BSC H 0.41 0.71 K 0.20 - L 0.51 0.71 α 0° 12° MagnaChip Semiconductor Ltd. MDU3605– Single P-Channel Trench MOSFET Package Dimension MDU3605– Single P-Channel Trench MOSFET DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. August. 2011. Version 1.1 6 MagnaChip Semiconductor Ltd.