PD - 96426 AUTOMOTIVE GRADE • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and • • • • • • • • AUIRF7759L2TR AUIRF7759L2TR1 Automotive DirectFET® Power MOSFET V(BR)DSS 75V RDS(on) typ. 1.8mΩ max. 2.3mΩ ID (Silicon Limited) 160A Qg 200nC other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead Free, RoHS Compliant and Halogen Free Automotive Qualified * D SC M2 S S S S S S S D DirectFET® ISOMETRIC L8 Applicable DirectFET® Outline and Substrate Outline SB G S M4 L4 L6 L8 Description The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRF7759L2TR(1) to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Max. Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TC = 100°C PD @TA = 25°C EAS IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation Power Dissipation Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Soldering Temperature Operating Junction and Storage Temperature Range f f e f f c g f h g g Units 75 ±20 160 113 26 375 640 125 63 3.3 257 V A W See Fig.18a, 18b, 16, 17 270 -55 to + 175 mJ A mJ °C Thermal Resistance RθJA RθJA RθJA RθJ-Can RθJ-PCB e j k Parameter Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Can Junction-to-PCB Mounted Linear Derating Factor fl f Typ. Max. Units ––– 12.5 20 ––– ––– 45 ––– ––– 1.2 0.5 °C/W 0.83 W/°C HEXFET® is a registered trademark of International Rectifier. www.irf.com 1 03/28/12 AUIRF7759L2TR/TR1 Static Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Min. Drain-to-Source Breakdown Voltage 75 ––– ––– ΔΒVDSS/ΔTJ RDS(on) VGS(th) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.02 1.8 ––– 2.3 Gate Threshold Voltage Gate Threshold Voltage Coefficient Forward Transconductance 2.0 ––– 74 3.0 -11 ––– 4.0 ––– ––– Drain-to-Source Leakage Current ––– ––– ––– ––– Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– ΔVGS(th)/ΔTJ gfs IDSS IGSS Conditions Typ. Max. Units BVDSS VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 2mA mΩ VGS = 10V, ID = 96A V i V VDS = VGS, ID = 250μA mV/°C VDS = 25V, ID = 96A S VDS = 75V, VGS = 0V 20 μA VDS = 60V, VGS = 0V, TJ = 125°C 250 VGS = 20V 100 nA VGS = -20V -100 Dynamic Characteristics @ TJ = 25°C (unless otherwise stated) Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Coss Coss Total Gate Charge Pre-Vth Gate-to-Source Charge ––– ––– 200 37 300 ––– Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– ––– 11 62 91 ––– 93 ––– ––– ––– 73 60 ––– ––– ––– ––– ––– Output Charge Gate Resistance Turn-On Delay Time ––– 1.1 18 Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– 37 80 33 ––– ––– ––– Input Capacitance Output Capacitance ––– ––– 12222 1465 ––– ––– Reverse Transfer Capacitance Output Capacitance Output Capacitance ––– ––– ––– 609 7457 955 ––– ––– ––– nC VDS = 38V VGS = 10V ID = 96A See Fig. 9 nC VDS = 16V, VGS = 0V Ω ns VDD = 38V, VGS = 10V ID = 96A i RG=1.8Ω VGS = 0V VDS = 25V pF ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 60V, f=1.0MHz Diode Characteristics @ TJ = 25°C (unless otherwise stated) Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current g (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Surface mounted on 1 in. square Cu (still air). Notes through are on page 10 2 Min. Typ. Max. Units ––– ––– 160 ––– ––– 640 ––– ––– 1.3 V ––– ––– 64 150 96 225 ns nC A Mounted to a PCB with small clip heatsink (still air) Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 96A, VGS = 0V TJ = 25°C, IF = 96A, VDD = 38V i di/dt = 100A/μs i Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) www.irf.com AUIRF7759L2TR/TR1 Qualification Information † Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level Machine Model LARGE-CAN MSL1 Class M4 (+/- 800V) (per AEC-Q101-002) Human Body Model ESD Class H2 (+/- 6000V) (per AEC-Q101-001) Charged Device Model RoHS Compliant N/A (per AEC-Q101-005) Yes † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF7759L2TR/TR1 1000 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 10 1000 VGS 15V 10V 7.00V 5.50V 5.00V 4.50V 4.00V 3.75V TOP 100 1 3.75V 0.1 ≤60μs PULSE WIDTH BOTTOM VGS 15V 10V 7.00V 5.50V 5.00V 4.50V 4.00V 3.75V 3.75V 10 ≤60μs PULSE WIDTH Tj = 25°C Tj = 175°C 0.01 0.1 1 10 1 100 0.1 V DS, Drain-to-Source Voltage (V) 1.95 TA= 25°C VGS= 7.0V ( Typical R DS(on) mΩ) ID = 96A 6 1.85 T J = 125°C 4 VGS= 8.0V VGS= 10V 1.75 2 VGS= 15V T J = 25°C 1.65 0 4 6 8 10 12 14 16 18 15 20 30 45 60 75 90 105 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 3. Typical On-Resistance vs. Gate Voltage Fig 4. Typical On-Resistance vs. Drain Current 1000 2.5 VDS = 25V ≤60μs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 V DS, Drain-to-Source Voltage (V) 8 2 100 10 T J = 175°C TJ = 25°C TJ = -40°C 1 0.1 ID = 96A VGS = 10V 2.0 1.5 1.0 0.5 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics 4 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics RDS(on), Drain-to -Source On Resistance (m Ω) 1 -60 -20 20 60 100 140 180 TJ , Junction Temperature (°C) Fig 6. Normalized On-Resistance vs. Temperature www.irf.com AUIRF7759L2TR/TR1 1000 T J = 175°C 4.0 ISD, Reverse Drain Current (A) VGS(th) , Gate threshold Voltage (V) 4.5 3.5 3.0 2.5 2.0 ID = 1.0A ID = 1.0mA ID = 250μA 1.5 1.0 TJ = 25°C TJ = -40°C 100 10 1 VGS = 0V 0.5 0.1 -75 -50 -25 0 25 50 75 100 125 150 175 0.2 T J , Temperature ( °C ) Fig 7. Typical Threshold Voltage vs. Junction Temperature 100000 0.8 1.0 1.2 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd 500 TJ = 25°C C oss = C ds + C gd C, Capacitance (pF) Gfs, Forward Transconductance (S) 0.6 Fig 8. Typical Source-Drain Diode Forward Voltage 600 400 300 T J = 175°C 200 Ciss 10000 Coss Crss 1000 V DS = 25V 100 20μs PULSE WIDTH 0 100 0 50 100 150 200 250 300 1 ID,Drain-to-Source Current (A) 10 100 VDS, Drain-to-Source Voltage (V) Fig 9. Typical Forward Transconductance vs. Drain Current Fig 10. Typical Capacitance vs.Drain-to-Source Voltage 14 200 ID= 96A 12 VDS= 60V VDS= 38V 160 VDS= 15V 10 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 0.4 VSD, Source-to-Drain Voltage (V) 8 6 4 120 80 40 2 0 0 0 50 100 150 200 250 300 QG, Total Gate Charge (nC) Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage www.irf.com 25 50 75 100 125 150 175 T C , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 5 AUIRF7759L2TR/TR1 1200 EAS , Single Pulse Avalanche Energy (mJ) 10000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 1000 100 100μsec DC 1msec 10 1 10msec Tc = 25°C Tj = 175°C Single Pulse ID 15.39A 23.97A BOTTOM 96A TOP 800 600 400 200 0.1 0 0 1 10 100 25 50 VDS, Drain-to-Source Voltage (V) 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy vs. Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 τJ R1 R1 τJ τ1 R2 R2 R3 R3 τC τ τ2 τ1 τ2 τ3 τ3 Ci= τi/Ri Ci i/Ri 0.001 1E-005 0.0001 τ4 τ4 Ri (°C/W) τi (sec) 0.10804 0.000171 0.61403 0.053914 0.45202 0.006099 0.00001 0.036168 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 R4 R4 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 150°C and Tstart =25°C (Single Pulse) 100 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 16. Typical Avalanche Current vs.Pulsewidth 6 www.irf.com AUIRF7759L2TR/TR1 EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 96A 250 200 150 100 50 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 14, 17: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 17. Maximum Avalanche Energy vs. Temperature V(BR)DSS 15V DRIVER L VDS tp D.U.T RG + - VDD IAS VGS 20V A 0.01Ω tp I AS Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms Id Vds Vgs L VCC DUT 0 20K 1K S Vgs(th) Qgodr VGS RG RD VDS 90% D.U.T. + - 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 20a. Switching Time Test Circuit www.irf.com Qgs2 Qgs1 Fig 19b. Gate Charge Waveform Fig 19a. Gate Charge Test Circuit VDS Qgd VDD 10% VGS td(on) tr t d(off) tf Fig 20b. Switching Time Waveforms 7 AUIRF7759L2TR/TR1 Driver Gate Drive D.U.T - - - RG * • • • • D.U.T. ISD Waveform Reverse Recovery Current VDD ** P.W. Period *** + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + Period P.W. + + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 21. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs Automotive DirectFET® Board Footprint, L8 (Large Size Can). Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations G = GATE D = DRAIN S = SOURCE D D D S S S S S S S S G D D D Note: For the most current drawing please refer to IR website at http://www.irf.com/package 8 www.irf.com AUIRF7759L2TR/TR1 Automotive DirectFET® Outline Dimension, L8 Outline (LargeSize Can). Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations DIMENSIONS CODE A B C D E F G H J K L L1 M P R METRIC MIN MAX 9.05 9.15 6.85 7.10 5.90 6.00 0.55 0.65 0.58 0.62 1.18 1.22 0.98 1.02 0.73 0.77 0.38 0.42 1.35 1.45 2.55 2.65 5.35 5.45 0.68 0.74 0.09 0.17 0.02 0.08 IMPERIAL MIN MAX 0.356 0.360 0.270 0.280 0.232 0.236 0.022 0.026 0.023 0.024 0.046 0.048 0.039 0.040 0.029 0.030 0.015 0.017 0.053 0.057 0.100 0.104 0.211 0.215 0.027 0.029 0.003 0.007 0.001 0.003 Automotive DirectFET® Part Marking "AU" = GATE AND AUTOMOTIVE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at http://www.irf.com/package www.irf.com 9 AUIRF7759L2TR/TR1 Automotive DirectFET® Tape & Reel Dimension (Showing component orientation). LOADED TAPE FEED DIRECTION NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as AUIRF7759L2TR). For 1000 parts on 7" reel, order AUIRF7759L2TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4000) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MAX MIN CODE MIN MAX MIN MAX MAX A 7.000 N.C 12.992 N.C N.C 330.00 N.C 177.80 B 0.795 N.C 0.795 20.20 N.C 20.20 N.C N.C C 0.331 0.504 12.80 0.50 12.98 13.20 13.50 0.520 D 0.059 N.C 0.059 1.50 N.C 1.50 N.C 2.50 E 2.460 3.900 99.00 100.00 N.C 62.48 N.C 3.940 F N.C N.C 0.53 22.40 N.C 0.880 N.C N.C G N.C 0.650 16.40 0.720 N.C N.C 18.40 N.C H 0.630 0.630 15.90 N.C 19.40 0.760 16.00 N.C NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS METRIC IMPERIAL MIN MIN MAX MAX 4.69 0.476 12.10 11.90 0.154 3.90 0.161 4.10 0.623 0.642 16.30 15.90 0.291 7.40 0.299 7.60 0.283 0.291 7.40 7.20 0.390 9.90 0.398 10.10 0.059 N.C 1.50 N.C 0.059 1.50 0.063 1.60 Note: For the most current drawing please refer to IR website at http://www.irf.com/package Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET® Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. 10 Starting TJ = 25°C, L = 0.056mH, RG = 25Ω, IAS = 96A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Rθ is measured at TJ of approximately 90°C. www.irf.com AUIRF7759L2TR/TR1 Ordering Information Base part number Package Type AUIRF7759L2 DirectFET2 Large Can www.irf.com Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 1000 Complete Part Number AUIRF7759L2TR AUIRF7759L2TR1 11 AUIRF7759L2TR/TR1 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 12 www.irf.com