Sanken MGF65A3H Trench field stop igbts with fast recovery diode Datasheet

VCE = 650 V, IC = 30 A
Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A3H, MGF65A3H, FGF65A3H
Description
KGF65A3H, MGF65A3H, and FGF65A3H are 650 V
Field Stop IGBTs. Sanken original trench structure
decreases gate capacitance, and achieves high speed
switching and switching loss reduction. Thus, Field Stop
IGBTs can improve the efficiency of your circuit.
Data Sheet
Package
TO247-3L
TO3P-3L
(4)
(4)
Features
●
●
●
●
Low Saturation Voltage
High Speed Switching
With Integrated Fast Recovery Diode
RoHS Compliant
●
●
●
●
●
●
VCE ------------------------------------------------------ 650 V
IC (TC = 100 °C) ----------------------------------------- 30 A
Short Circuit Withstand Time ----------------------- 10 μs
VCE(sat) ----------------------------------------------- 1.9 V typ.
tf (TJ = 175 °C) ------------------------------------ 60 ns typ.
VF ---------------------------------------------------- 1.8 V typ.
Applications
(1) (2) (3)
(1) (2) (3)
TO3PF-3L
(1) (2) (3)
● Welding Converters
● PFC Circuit
(2)(4)
(1) Gate
(2) Collector
(3) Emitter
(4) Collector
(1)
(3)
Not to scale
Selection Guide
Part Number
Package
KGF65A3H
TO247-3L
MGF65A3H
TO3P-3L
FGF65A3H
TO3PF-3L
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
1
KGF65A3H, MGF65A3H, FGF65A3H
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current (1)
Symbol
VCE
VGE
IC
Pulsed Collector Current
IC(PULSE)
Diode Continuous Forward Current (1)
IF
Diode Pulsed Forward Current
IF(PULSE)
Short Circuit Withstand Time
tSC
Conditions
TC = 25 °C
TC = 100 °C
PW ≤ 1 ms,
duty cycle ≤ 1%
TC = 25 °C
TC = 100 °C
PW ≤ 1 ms,
duty cycle ≤ 1%
VGE = 15 V,
VCE = 400 V
TJ = 175 °C
Rating
650
±30
50
30
Unit
V
V
A
A
90
A
(2)
40
30
A
A
90
A
10
μs
217
Power Dissipation
PD
TC = 25 °C
W
72
Operating Junction Temperature
Storage Temperature Range
TJ
TSTG
Remarks
MGF65A3H
KGF65A3H
FGF65A3H
175
−55 to 150
°C
°C
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Thermal Resistance of IGBT
(Junction to Case)
RθJC (IGBT)
Thermal Resistance of Diode
(Junction to Case)
RθJC (Di)
(1)
(2)
Conditions
Min.
Typ.
Max.
—
—
0.69
—
—
2.08
—
—
1.15
—
—
2.28
Unit
°C/W
°C/W
Remarks
MGF65A3H
KGF65A3H
FGF65A3H
MGF65A3H
KGF65A3H
FGF65A3H
IC and IF are determined by the maximum junction temperature for TO3P-3L package.
Determined by bonding wires capability.
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
2
KGF65A3H, MGF65A3H, FGF65A3H
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Collector to Emitter Breakdown
V(BR)CES
Voltage
Collector to Emitter Leakage Current
ICES
Min.
Typ.
Max.
Unit
IC = 100 μA, VGE = 0 V
650
—
—
V
VCE = 650 V, VGE = 0 V
—
—
100
µA
VGE = ±30 V
—
—
±500
nA
VGE(TH)
VCE = 10 V, IC = 1 mA
4.0
5.5
7.0
V
VCE(sat)
VGE = 15 V, IC = 30 A
—
1.9
2.37
V
—
1800
—
—
200
—
—
80
—
—
60
—
td(on)
—
30
—
tr
—
30
—
—
90
—
—
30
—
Eon
—
0.5
—
Turn-off Energy
Eoff
—
0.4
—
Turn-on Delay Time
td(on)
—
30
—
tr
—
30
—
—
120
—
—
60
—
Gate to Emitter Leakage Current
Gate Threshold Voltage
Collector to Emitter Saturation
Voltage
Input Capacitance
IGES
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Gate Charge
Qg
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Energy
td(off)
tf
(3)
Rise Time
Turn-off Delay Time
Fall Time
td(off)
tf
Conditions
VCE = 20 V,
VGE = 0 V,
f = 1.0 MHz,
VCE = 520 V, IC = 30 A,
VGE = 15 V
TJ = 25 °C,
see Figure 1.
TJ = 175 °C,
see Figure 1.
Turn-on Energy (3)
Eon
—
1.0
—
Turn-off Energy
Emitter to Collector Diode Forward
Voltage
Emitter to Collector Diode Reverse
Recovery Time
Eoff
—
0.7
—
(3)
pF
nC
ns
mJ
ns
mJ
VF
IF = 30 A
—
1.8
—
V
trr
IF = 30 A,
di/dt = 700 A/μs
—
50
—
ns
Energy losses include the reverse recovery of diode.
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
3
KGF65A3H, MGF65A3H, FGF65A3H
Test Circuits and Waveforms
Conditions
VCE = 400 V
IC = 30 A
VGE = 15 V
RG = 10 Ω
L= 100 μH
DUT
(Diode)
L
VCE
RG
IC
15V
VGE
DUT
(IGBT)
(a) Test Circuit
VGE
90%
10%
t
VCE
dv/dt
t
IC
90%
90%
10%
10%
td(on)
tr
td(off)
t
tf
(b) Waveform
Figure 1.
Test Circuits and Waveforms of dv/dt and Switching Time
xGF65A3H-DSE Rev.1.3
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Oct. 12, 2016
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© SANKEN ELECTRIC CO., LTD. 2016
4
KGF65A3H, MGF65A3H, FGF65A3H
Rating and Characteristic Curves
1000
Collector Current, IC (A)
Collector Current, IC (A)
1000
100
10
100
10 μs
100 μs
10
1
1
IGBT,
Single pulse,
TJ = 175 °C
IGBT,
Single pulse,
TJ = 25 °C
0.1
0.1
1
10
100
1000
1
Collector-Emitter Voltage, VCE (V)
Figure 2.
100
1000
Collector-Emitter Voltage, VCE (V)
IGBT Reverse Bias Safe Operating Area
Figure 3.
300
IGBT Safe Operating Area
100
Collector Current, IC (A)
250
Power Dissipation, PD (W)
10
200
150
100
TO3P-3L,
TO247-3L,
TJ < 175 °C
50
50
60
40
TO3P-3L,
TO247-3L,
TJ < 175 °C
20
0
25
80
75
100
125
150
175
0
25
Case Temperature, TC (°C)
Figure 4.
Power Dissipation vs. TO3P-3L and
TO247-3L Case Temperature
50
75
100
125
150
175
Case Temperature, TC (°C)
Figure 5. Collector Current vs. TO3P-3L and
TO247-3L Case Temperature
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
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© SANKEN ELECTRIC CO., LTD. 2016
5
KGF65A3H, MGF65A3H, FGF65A3H
40
80
Collector Current, IC (A)
Power Dissipation, PD (W)
100
60
40
30
20
10
20
TO3PF-3L,
TJ < 175 °C
TO3PF-3L,
TJ < 175 °C
0
25
50
75
100
125
150
0
175
25
Case Temperature, TC (°C)
Figure 6.
75
100
125
150
175
Case Temperature, TC (°C)
Power Dissipation vs. TO3PF-3L Case
Temperature
Figure 7.
90
Collector Current vs. TO3PF-3L Case
Temperature
90
TJ = 25 °C
VGE = 15 V
70
VGE = 12 V
VGE = 20 V
60
50
40
TJ = 175 °C
80
Collector Current, IC (A)
80
Collector Current, IC (A)
50
VGE = 10 V
30
VGE = 20 V
70
VGE = 12 V
VGE = 15 V
60
50
40
VGE = 10 V
30
20
20
VGE = 8 V
10
10
VGE = 8 V
0
0
0
1
2
3
4
Collector-Emitter Voltage, VCE (V)
Figure 8.
Output Characteristics (TJ = 25 °C)
5
0
1
2
3
4
5
Collector-Emitter Voltage, VCE (V)
Figure 9.
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
Output Characteristics (TJ = 175 °C)
6
KGF65A3H, MGF65A3H, FGF65A3H
3.0
VCE = 5 V
80
Collector Current. IC (A)
Collector-Emitter Saturation, VCE (sat) (V)
90
70
60
50
40
TJ = 25 °C
30
TJ = 175 °C
20
10
VGE = 15 V
IC = 60 A
2.5
IC = 30 A
2.0
IC = 10 A
1.5
1.0
0
0
5
10
-50 -25
15
Gate-Emitter Voltage, VGE (V)
Figure 10.
25
50
75 100 125 150 175
Junction Temperature, TJ (°C)
Transfer Characteristics
Figure 11.
Saturation Voltage vs. Junction
Temperature
7
3.0
VGE = 15 V
TJ = 175 °C
2.5
6
Gate Threshold Voltage (V)
at VCE = 10 V, IC = 1mA
Collector-Emitter Saturation, VCE (sat) (V)
0
TJ = 25 °C
2.0
TJ = −55 °C
1.5
5
4
3
1.0
2
0.5
0
20
40
60
-50 -25
Collector Current, IC (A)
Figure 12.
Saturation Voltage vs. Collector Current
0
25
50
75 100 125 150 175
Junction Temperature, TJ (°C)
Figure 13.
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
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© SANKEN ELECTRIC CO., LTD. 2016
Gate Threshold Voltage vs. Junction
Temperature
7
KGF65A3H, MGF65A3H, FGF65A3H
10000
Capacitance (pF)
1000
Gate -Emitter Voltage, VGE (V)
20
Cies
Coes
100
IC = 30 A
VCE ≈ 130 V
10
VCE ≈ 520 V
Cres
f = 1 MHz,
VGE = 0 V
10
0
0
10
20
30
40
50
0
20
60
Gate Charge, Qg (nC)
Collector-Emitter Voltage, VCE (V)
Figure 14.
40
Capacitance Characteristics
Figure 15.
Typical Gate Charge
1000
1000
Switching Time (ns)
Switching Time (ns)
Inductive load,
IC = 30 A, VCE = 400 V,
VGE = 15 V, RG = 10 Ω
td(off)
100
tf
td(off)
100
tf
td(on)
10
tr
tr
Inductive load,
VCE = 400 V, VGE = 15 V,
RG = 10 Ω, TJ = 175 °C
td(on)
10
25
50
75
100
125
150
175
1
1
Junction Temperature, TJ (°C)
Figure 16.
Switching Time vs. Junction Temperature
10
100
Collector Current, IC (A)
Figure 17.
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
Switching Time vs. Collector Current
8
KGF65A3H, MGF65A3H, FGF65A3H
1000
4
Inductive load,
IC = 30 A, VCE = 400 V,
VGE = 15 V, TJ = 175 °C
Inductive load,
IC = 30 A, VCE = 400 V,
VGE = 15 V, RG = 10 Ω
td(off)
Switching Loss (mJ)
Switching Time (ns)
3
tr
100
tf
2
Eon + Eoff
Eon
1
td(on)
Eoff
0
10
10
25
100
50
Switching Time vs. Gate Resistor
Figure 19.
10
125
150
175
Switching Loss vs. Junction Temperature
4
Inductive load,
VCE = 400 V, VGE = 15 V,
RG = 10 Ω, TJ = 175 °C
8
Inductive load,
IC = 30 A, VCE = 400 V,
VGE = 15 V, TJ = 175 °C
Eon + Eoff
Switching Loss (mJ)
Switching Loss (mJ)
100
Junction Temperature, TJ (°C)
Gate Resistor, RG (Ω)
Figure 18.
75
6
Eon
4
Eon + Eoff
Eon
2
Eoff
1
Eoff
2
3
0
0
0
10
20
30
40
50
60
70
80
90
10
20
Switching Loss vs. Collector Current
40
50
60
70
80
90 100
Gate Resistor, RG (Ω)
Collector Current, IC (A)
Figure 20.
30
Figure 21.
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
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© SANKEN ELECTRIC CO., LTD. 2016
Switching Loss vs. Gate Resistor
9
KGF65A3H, MGF65A3H, FGF65A3H
90
4
80
70
3
Forward Current, IF (A)
Switching Loss (mJ)
Inductive load,
IC = 30 A, VGE = 15 V,
RG = 10 Ω, TJ = 175 °C
Eon + Eoff
2
Eon
1
60
50
40
TJ = 175 °C
30
20
TJ = −55 °C
Eoff
10
0
200
250
300
350
400
450
TJ = 25 °C
0
500
0.0
0.5
Collector-Emitter Voltage, VCE (V)
Figure 22.
1.5
2.0
2.5
3.0
Forward Voltage, VF (V)
Switching Loss vs. Collector-Emitter
Voltage
Figure 23.
3
Diode Forward Characteristics
160
IF = 60 A
IF = 30 A
1
IF = 10 A
Reverse Recovery Time, trr (ns)
2
Inductive load,
VR = 400 V,
IF = 30 A
TJ = 175 °C
140
Forward Voltage, VF (V)
1.0
120
100
80
TJ = 25 °C
60
40
0
-50 -25
0
25
50
75 100 125 150 175
300
500
600
700
800
900 1000
di/dt (A/μs)
Junction Temperature, TJ (°C)
Figure 24. Diode Forward Voltage
vs. Junction Temperature
400
Figure 25.
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
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© SANKEN ELECTRIC CO., LTD. 2016
Diode Reverse Recovery Time vs. di/dt
10
KGF65A3H, MGF65A3H, FGF65A3H
30
Inductive load,
VR = 400 V,
IF = 30 A
2.5
Reverse Recovery Current, Irr (A)
Reverse Recovery Charge, Qrr (μC)
3.0
TJ = 175 °C
2.0
1.5
1.0
TJ = 25 °C
0.5
TJ = 175 °C
25
20
TJ = 25 °C
15
10
Inductive load,
VR = 400 V,
IF = 30 A
5
0
0.0
300
400
500
600
700
800
300
900 1000
400
di/dt (A/μs)
Figure 26.
500
600
700
800
900 1000
di/dt (A/µs)
Diode Reverse Recovery Charge vs. di/dt
Figure 27.
Diode Reverse Recovery Current vs. di/dt
10
Thermal Resistance (°C/W)
Diode
1
IGBT
0.1
TO3P-3L,
TO247-3L,
TC = 25 °C,
Single pulse,
VCE < 5 V
0.01
0.001
1μ
10μ
100μ
1m
10m
100m
1
10
100
Pulse Width (s)
Figure 28.
Transient Thermal Resistance (TO3P-3L and TO247-3L)
xGF65A3H-DSE Rev.1.3
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Oct. 12, 2016
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© SANKEN ELECTRIC CO., LTD. 2016
11
KGF65A3H, MGF65A3H, FGF65A3H
10
Thermal Resistance (°C/W)
Diode
IGBT
1
0.1
TO3PF-3L,
TC = 25 °C,
Single pulse,
VCE < 5 V
0.01
0.001
1μ
10μ
100μ
1m
10m
100m
1
10
100
Pulse Width (s)
Figure 29.
Transient Thermal Resistance (TO3PF-3L)
xGF65A3H-DSE Rev.1.3
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Oct. 12, 2016
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© SANKEN ELECTRIC CO., LTD. 2016
12
KGF65A3H, MGF65A3H, FGF65A3H
Physical Dimensions
● TO247-3L
● TO3P-3L
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
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13
KGF65A3H, MGF65A3H, FGF65A3H
● TO3PF-3L
NOTES:
- All dimensions in millimeters
- Pin treatment for TO247, TO3P and TO3PF: Pb-free (RoHS compliant)
- When soldering the products, make sure to minimize the working time within the following limits:
Flow: 260 ± 5 °C / 10 ± 1 s, 2 times
Soldering Iron: 380 ± 10 °C / 3.5 ± 0.5 s, 1 time (Soldering should be at a distance of at least 1.5 mm from the
body of the products.)
- Soldering should be at a distance of at least 1.5 mm from the body of the products.
- The recommended screw torque for TO247, TO3P and TO3PF: 0.686 to 0.882 N∙m (7 to 9 kgf∙cm)
Marking Diagram
TO247-3L
TO3P-3L
TO3PF-3L
(a) Part Number
(b) Lot Number
KGF65A3H
MGF65A3H
YMDD XX
YMDD XX
(a)
(b)
(a)
(b)
FGF65A3H
YMDD XX
Y is the last digit of the year of manufacture (0 to 9).
M is the month of the year (1 to 9, O, N or D).
DD is the day of the month (01 to 31).
XX is the control number.
(a)
(b)
xGF65A3H-DSE Rev.1.3
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14
KGF65A3H, MGF65A3H, FGF65A3H
Important Notes
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Information, or providing them for non-residents, you must comply with all applicable export control laws and regulations in each
country including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan,
and follow the procedures required by such applicable laws and regulations.
● Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including
the falling thereof, out of Sanken’s distribution network.
● Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is
error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting
from any possible errors or omissions in connection with the contents included herein.
● Please refer to the relevant specification documents in relation to particular precautions when using the Sanken Products, and refer
to our official website in relation to general instructions and directions for using the Sanken Products.
● All rights and title in and to any specific trademark or tradename belong to Sanken or such original right holder(s).
DSGN-CEZ-16002
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
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