STMicroelectronics HVLED002TR High performance current mode led controller Datasheet

HVLED002
High performance current mode LED controller
Datasheet - production data
Description
SO-8
Features
 Trimmed oscillator for precise frequency
control
 Oscillator frequency guaranteed at 250 kHz
 Current mode operation to 500 kHz
 Latching PWM for cycle-by-cycle current
limiting
The HVLED002 control IC provides the necessary
features to implement off-line or DC to DC fixed
frequency current mode control schemes to
implement LED drivers. Internally implemented
circuits include a trimmed oscillator for the precise
duty cycle control, undervoltage lockout,
a precision reference trimmed for accuracy at the
error amplifier input, a PWM comparator which
also provides current limit control and a totem
pole output stage designed to the source or sink
high peak current. The output stage, suitable for
driving N-channel MOSFETs, is low in the offstate.
 Internally trimmed reference with undervoltage
lockout
Order codes
 High current totem pole output
 Undervoltage lockout with hysteresis
 Low start-up and operating current
Table 1. Device summary
HVLED002
HVLED002TR
Package
SO8
Packaging
Tube
Tape and reel
Figure 1. Block diagram
December 2015
This is information on a product in full production.
DocID028720 Rev 1
1/19
www.st.com
Contents
HVLED002
Contents
1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
Pin connection and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
5.1
Supply voltage and undervoltage lockout . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.2
Reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.3
Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.4
Current sense . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.5
Error amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.6
Totem pole output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.7
Typical application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.1
7
2/19
SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DocID028720 Rev 1
HVLED002
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 20.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pin connection (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Open loop test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Timing resistor vs. oscillator frequency. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Output deadtime vs. oscillator frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Oscillator discharge current vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Maximum output duty cycle vs. timing resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Error amplifier open loop gain and phase vs. frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Current sense input threshold vs. error amplifier output voltage . . . . . . . . . . . . . . . . . . . . . 9
Reference voltage change vs. source current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Reference short-circuit current vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Output saturation voltage vs. load current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Supply current vs. supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Oscillator and output waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Error amplifier configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Error amplifier compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Undervoltage lockout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Current sense circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Soft-start circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
External clock synchronization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Leading edge blanking circuitries . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Shutdown circuitries . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Typical application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
SO-8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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Absolute maximum ratings
1
HVLED002
Absolute maximum ratings
Table 2. Absolute maximum ratings(1)
Symbol
Parameter
Value
Unit
Vi
Supply voltage
30
V
IO
Output current
±1
A
EO
Output energy (capacitive load)
5
µJ
- 0.3 to 5.5
V
10
mA
Analog inputs (pins 2, 3)
Error amplifier output sink current
1. All voltages are with respect to the pin 5, all currents are positive into the specified terminal.
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HVLED002
2
Pin connection and functions
Pin connection and functions
Figure 2. Pin connection (top view)
Table 3. Pin functions
No. Function
3
Description
1
COMP
This pin is the error amplifier output and is made available for loop compensation.
2
VFB
3
ISENSE
A voltage proportional to the inductor current is connected to this input. The PWM
uses this information to terminate the output switch conduction.
4
RT/CT
The oscillator frequency and maximum output duty cycle are programmed by the
connecting resistor RT to VREF and the capacitor CT to ground. An operation to
500 kHz is possible.
This is the inverting input of the error amplifier. It is normally connected to the
switching power supply output through a resistor divider.
5
GROUND This pin is the ground reference of the device.
6
OUTPUT
7
Vi
8
VREF
This output directly drives the gate of a power MOSFET. Peak currents up to 1 A
are sourced and sunk by this pin.
This pin is the positive supply of the control IC.
This is the reference output. It provides the charging current for the capacitor CT
through the resistor RT.
Thermal data
Table 4. Thermal data
Symbol
Rth j-amb
Description
Thermal resistance junction ambient
SO8
Unit
150
°C/W
Tstg
Storage temperature range
-65 to 150
°C
TJ
Junction operating temperature
-40 to 150
°C
TL
Lead temperature (soldering 10 s)
300
°C
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Electrical characteristics
4
HVLED002
Electrical characteristics
Unless otherwise stated, these specifications apply for 0 ≤ Tamb ≤ 85 °C; Vi = 15 V;
RT = 10 K; CT = 3.3 nF(a).
Table 5. Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
25
V
5.00
5.05
V
SUPPLY VOLTAGE
Vi
Max. operative volt.
REFERENCE SECTION
VREF
Output voltage
TJ = 25 °C, Io = 1 mA
VREF
Line regulation
12 V ≤ Vi ≤ 25 V
2
20
mV
VREF
Load regulation
1 ≤ Io ≤ 20 mA
3
25
mV
VREF/T Temperature stability
Total output variation
eN
ISC
4.95
(1)
0.2
Line, load, temperature
Output noise voltage
10 Hz ≤ f ≤ 10 KHz, Tj = 25
Long term stability
Tamb = 125 °C, 1000 hrs(1)
4.82
°C(1)
Output short-circuit
mV/°C
5.18
50
V
µV
5
25
mV
-30
-100
-180
mA
49
48
225
52
250
55
56
275
KHz
OSCILLATOR SECTION
fOSC
Frequency
TJ = 25 °C
TA = 0 to 85 °C
TJ = 25 °C (RT = 6.2 k, CT = 1 nF)
fOSC/V Frequency change with volt.
VCC = 12 V to 25 V
-
0.2
1
%
fOSC/T Frequency change with temp.
Tamb = 0 °C to 85 °C
-
0.5
-
%
Peak-to-peak
-
1.6
-
V
7.8
8.3
8.8
mA
TA = 0°C to 85°C
7.6
-
8.8
mA
Input voltage
V(COMP) = 2.5 V
2.42
2.50
2.58
V
Input bias current
VFB = 5 V
-0.1
-2
µA
AVOL
2 V ≤ Vo ≤ 4 V
VOSC
Oscillator voltage swing
Idischg
Discharge current (VOSC = 2 V) TJ = 25 °C
ERROR AMPLIFIER SECTION
VREF,EA
Ib
BW
PSRR
Io
°C(1)
65
90
dB
0.7
1
MHz
Unity gain bandwidth
TJ = 25
Power supply reject. ratio
12 V ≤ Vi ≤ 25 V
60
70
dB
Output sink current
V(VFB) = 2.7 V, V(COMP) = 1.1 V
2
12
mA
a. Max. package power dissipation limits must be respected; low duty cycle pulse techniques are used during the test
maintaining TJ as close to Tamb as possible.
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HVLED002
Electrical characteristics
Table 5. Electrical characteristics (continued)
Symbol
Io
Parameter
Test conditions
Output source current
V(VFB) = 2.3 V, V(COMP) = 5 V
VCOMP high
V(VFB) = 2.3 V; RL = 15 K between
COMP and ground
VCOMP low
V(VFB) = 2.7 V; RL = 15 K between
COMP and VREF
Min.
Typ.
-0.5
-1
mA
5
6.2
V
0.8
Max.
1.1
Unit
V
CURRENT SENSE SECTION
GV
MAXCS
SVR
Ib
Gain
(2) (3)
Maximum input signal
V(COMP) = 5.6 V
Supply voltage rejection
,
12 ≤ Vi ≤ 25
3
258
V(1)
267
V/V
276
70
Input bias current
mV
dB
-2
-10
µA
150
300
ns
ISINK = 20 mA
0.1
0.4
V
ISINK = 200 mA
1.6
2.2
V
Delay to output
OUTPUT SECTION
VOL
VOH
VOLS
tr
tf
Output low level
Output high level
ISOURCE = 20 mA
13
13.5
V
ISOURCE = 200 mA
12
13.5
V
UVLO saturation
VCC = 6 V; ISINK = 1 mA
0.1
1.1
V
Rise time
TJ = 25 °C; CL = 1 nF(1)
50
150
ns
nF(1)
50
150
ns
Fall time
TJ = 25 °C; CL = 1
UNDERVOLTAGE LOCKOUT SECTION
VON
Start threshold
Increasing voltage
7.8
8.4
9.0
V
VOFF
Min. operating voltage after
turn-on
Decreasing voltage
7.0
7.6
8.2
V
94
96
100
%
0
%
0.3
0.5
mA
12
17
mA
PWM SECTION
Maximum duty cycle
Minimum duty cycle
TOTAL STANDBY CURRENT
Ist
Start-up current
Ii
Operating supply current
V(VFB) = V(COMP) = 0 V
1. These parameters, although guaranteed, are not 100% tested in production.
2. Parameter measured at the trip point of the latch with V(VFB) = 0.
3. Gain defined as : A = V(COMP)/V(ISENSE) ; 0 ≤ V(ISENSE) ≤ 267 mV.
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19
Electrical characteristics
HVLED002
Figure 3. Open loop test circuit
VREF
RT
2N2222
COMP
VFB
ERROR AMP.
ADJUST
ISENSE
ADJUST
A
VREF
ISENSE
RT/CT
1
Vi
0.1 μF
8
7
2
HVLED002
3
6
4
5
Vi
0.1 μF
OUTPUT
1W
OUTPUT
GROUND
CT
GROUND
AM039820
High peak currents associated with capacitive loads necessitate careful grounding
techniques. Timing and bypass capacitors should be connected close to the pin 5 in a single
point ground. The transistor and 5 K potentiometer are used to sample the oscillator
waveform and apply an adjustable ramp to the pin 3.
Figure 4. Timing resistor vs. oscillator
frequency
8/19
Figure 5. Output deadtime vs. oscillator
frequency
DocID028720 Rev 1
HVLED002
Electrical characteristics
Figure 6. Oscillator discharge current
vs. temperature
Figure 7. Maximum output duty cycle vs. timing
resistor
Figure 8. Error amplifier open loop gain and
phase vs. frequency
Figure 9. Current sense input threshold
vs. error amplifier output voltage
DocID028720 Rev 1
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19
Electrical characteristics
HVLED002
Figure 10. Reference voltage change vs. source
current
Figure 11. Reference short-circuit current
vs. temperature
Figure 12. Output saturation voltage vs. load
current
Figure 13. Supply current vs. supply voltage
Figure 14. Oscillator and output waveforms
Figure 15. Error amplifier configuration
10/19
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HVLED002
Electrical characteristics
Figure 16. Undervoltage lockout
Figure 17. Current sense circuit
Figure 18. Soft-start circuit
Figure 19. External clock synchronization
Figure 20. Error amplifier compensation
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DocID028720 Rev 1
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19
Application information
HVLED002
5
Application information
5.1
Supply voltage and undervoltage lockout
The HVLED002 device is able to operate with a very wide range of supply voltage between
8.4 V and 30 V. The UVLO circuit insures that VCC is adequate to make the HVLED002 fully
operational before enabling the output stage. Figure 16 shows that the UVLO turn-on and
turn-off thresholds are fixed internally at 8.4 V and 7.6 V respectively. The hysteresis
prevents VCC oscillations during power sequencing and the start-up current is less than
1 mA.
During UVLO, the output driver is in a low state and it can easily sink 1 mA, enough to
insure the MOSFET is held off.
5.2
Reference voltage
The HVLED002 contains a precision reference voltage (5 V) that generates all the internal
reference voltages such as the error amplifier's reference (connected to its non-inverting
input), current sense clamp limit (MAXCS) and oscillator's internal bias currents and
thresholds.
The reference voltage is also available on the VREF pin that, thanks to its high output
current capability (over 20 mA), is able to supply not only nearby passive circuitries but also
auxiliary microcontrollers.
The pin must be bypassed with at least a 0.1 µF ceramic capacitor placed as close as
possible to the respective VREF and GND pins.
5.3
Oscillator
The HVLED002 oscillator is programmed as shown in Figure 14. The timing capacitor CT is
charged from a reference voltage (e.g.: VREF) through the timing resistor RT, and
discharged by an internal current source.
The MOSFET is turned on (GD pin high) when the oscillator starts the charge of the CT. As
soon as the voltage of the CT reaches an upper threshold the internal discharge current is
activated until the CT voltage reaches a lower threshold. This occurrence initiates a new
oscillator cycle.
The difference between the upper and the lower thresholds (Vosc) determines the duration
of charging and discharging time. During the discharging time (also called deadtime) the
MOSFET is off and any spurious GD triggering is avoided. The deadtime also limits the
maximum obtainable duty cycle.
The oscillator can be differently connected to external circuitry to obtain different operating
schemes. Connecting the RT to VREF a very accurate fixed frequency operation is
achieved: the RT,CT combinations are plot into Figure 5 on page 8, Figure 6 and Figure 8
for a quick reference, or calculated as follows:
Equation 1
FOSC (kHz) = 1.72 / [RT (k) x CT (µF)]
12/19
DocID028720 Rev 1
HVLED002
Application information
Connecting the RT to a variable voltage, dependency of the operating frequency on said
voltage is introduced. A pull-down switch can be used to reset the CT during the MOSFET's
on time, for example to operate in fixed off time. A synchronous operation is also possible
using circuitries like the one proposed as an example in Figure 19. The HVLED002
oscillator can be used to a maximum of 500 kHz.
5.4
Current sense
The peak current mode operation of the HVLED002 is made by the embedded current
sense comparator: the said element turns off the MOSFET as soon as the current sense
input voltage is greater than the internal threshold derived by the COMP pin voltage
(Figure 17).
The current sense pin (ISENSE) is normally connected to a shunt resistor, put in series with
the main switch, but different connections are also possible.
Under the normal operation the threshold voltage (VCS) is controlled by the E/A according
to the following relation:
Equation 2
VCS = 1/3 * (VCOMP - 1.4 V)
VCS is upper limited to MAXCS to reduce the shunt resistor power dissipation without the
need of current transformers or offsets circuitries. This parameter is beneficial in those
applications where both the peak current accuracy and the operating power dissipation are
critical aspects (e.g.: LED secondary side LED current regulators).
When the sensing current resistor is in series with the power switch, the current waveform
will often have a large spike at its leading edge due to parasitic capacitances and gate driver
charging currents. A very simple leading edge blanking (LEB) circuit consists on an RC filter,
but more effective active circuitries are also possible.
Figure 21. Leading edge blanking circuitries
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DocID028720 Rev 1
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19
Application information
5.5
HVLED002
Error amplifier
An error amplifier (E/A) structure is present in the HVLED002 (Figure 15 on page 10). The
non-inverting input is internally connected to a very precise reference voltage (2.5 V ± 2%).
The E/A output and inverting pin are connected respectively to the pin 1 and 2, available for
external compensation. The E/A output will source at least 0.5 mA and sink 2 mA. Figure 8
on page 9 shows the open loop frequency response of the E/A.
The output of the error amplifier can be forced to ground in different ways to shut down the
application as shown in Figure 22.
Figure 22. Shutdown circuitries
4
OSC
8
R
BIAS
R
+
1 mA
2R
+
2
-
EA
R
1
5
2N
3905
2N
3903
The SCR must be selected for a holding current of less than 0.5 mA at TA(min).
The simple two-transistor circuit can be used in place of the SCR as shown. All resistors are 10 K .
AM039818
5.6
Totem pole output
The HVLED002 has a single totem pole output which can be operated to the ± 1 Amp peak
current for driving MOSFET gates, and a + 200 mA average current for bipolar power
transistors.
Cross conduction between the driver's output transistors is minimal, the average added
power with VIN = 30 V is around 80 mW at 200 kHz.
Limiting the peak current through the IC is accomplished by placing a resistor between the
totem pole output and the gate of the MOSFET. Without this resistor, the peak current is
limited only by the dV/dT rate of the totem pole switching and the FET gate capacitance.
An additional discharging diode can be put in parallel with the said limiting resistor to quickly
turn off the MOSFET, reducing the switching losses and the control to output delay.
14/19
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HVLED002
5.7
Application information
Typical application
The HVLED002 device can be used as a secondary side step-down current regulator in the
multiple staged LED driver - see Figure 23. It is easy to configure the device to drive an
inverse (or modified) buck topology based on the fixed off-time (FOT) algorithm.
The MOSFET remains on until the current sense threshold is reached; during the on time,
the oscillator remains reset to ground. The current sense threshold is set by the saturation
of the E/A to MAXCS to guarantee the higher precision as possible.
The MOSFET is then turned off and the oscillator is released: the resulting off time is fixed
by the charging of the CT by RT, connected to VREF.
An optional auxiliary microcontroller, supplied by VREF itself can be used to dim the LED
current according to the information sent to the application by a remote controller.
Figure 23. Typical application
VIN
5.6 V(1)
VFB
VREF
VDD
2
1
8
μC
User interface
Vaux
COMP
7
6
HVLED002
GPIO
RT/CT
3
4
Vi
OUTPUT
D
Q1
L
Isense
5
GND
GROUND
RS
Osc. reset
Dimming
1. Optional for better performances.
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19
Package information
6
HVLED002
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
6.1
SO-8 package information
Figure 24. SO-8 package outline
$09
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HVLED002
Package information
Table 6. SO-8 package mechanical data
Dimensions (mm)
Dimensions (inch)
Symbol
Min.
Typ.
A
Max.
Min.
Typ.
1.750
0.0689
A1
0.100
A2
1.250
b
0.280
0.480
0.0110
0.0189
c
0.170
0.230
0.0067
0.0091
(1)
4.800
4.900
5.000
0.1890
0.1929
0.1969
E
5.800
6.000
6.200
0.2283
0.2362
0.2441
E1(2)
3.800
3.900
4.000
0.1496
0.1535
0.1575
D
e
0.250
Max.
0.0039
0.0098
0.0492
1.270
0.0500
h
0.250
0.500
0.0098
0.0197
L
0.400
1.270
0.0157
0.0500
L1
k
ccc
1.040
0°
0.0409
8°
0.10
0°
8°
0.0039
1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold Flash, protrusions or gate burrs
shall not exceed 0.15 mm in total (both sides).
2. Dimension “E1” does not include interlead Flash or protrusions. Interlead Flash or protrusions shall not
exceed 0.25 mm per side.
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Revision history
7
HVLED002
Revision history
Table 7. Document revision history
18/19
Date
Revision
15-Dec-2015
1
Changes
Initial release.
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