CJ3401 P-Channel Enhancement Mode MOSFET Feature -30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. Super High dense cell design for extremely low RDS(ON) SOT-23 for Surface Mount Package Reliable and Rugged SOT-23 Applications ● Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=25℃ Unless Otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Electrical Characteristics Parameter Off Characteristics Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Symbol Limit Units VDS VGS ID -30 ±12 -4.2 V V A TA=25℃ Unless Otherwise noted Symbol Test Conditions Min Typ. Max Units BVDSS VGS=0V, ID=-250μA -30 - - V IDSS VDS=-24V, VGS=0V - - -1 μA IGSSF IGSSR VGS=12V, VDS=0V VGS=-12V, VDS=0V - - 100 -100 nA nA VGS(th) VGS= VDS, ID=-250µA -0.7 - -1.3 V VGS =-10V, ID =-4.2A - 50 55 mΩ VGS =-4.5V, ID =-4.0A VGS =-2.5V, ID =-1.0A - 60 80 70 120 mΩ mΩ -1.0 V On Characteristics Gate Threshold Voltage Static Drain-source On-Resistance RDS(ON) Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage [email protected] VSD VGS =0V, IS=-1.0A www.zpsemi.com 1 of 5 CJ3401 Typical Characteristics [email protected] www.zpsemi.com 2 of 5 CJ3401 Package Outline Dimensions (UNIT: mm) SOT-23 [email protected] www.zpsemi.com 3 of 5 CJ3401 SOT-23 Carrier Tape [email protected] www.zpsemi.com 4 of 5 CJ3401 SOT-23 Carrier Reel [email protected] www.zpsemi.com 5 of 5