ON NVMFD5873NLWFT1G Power mosfet Datasheet

NVMFD5873NL
Power MOSFET
60 V, 13 mW, 58 A, Dual N−Channel Logic
Level, Dual SO−8FL
Features
•
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Designs
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVMFD5873NLWF − Wettable Flanks Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
This is a Pb−Free Device
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V(BR)DSS
RDS(on) MAX
ID MAX
13 mW @ 10 V
60 V
58 A
16.5 mW @ 4.5 V
Dual N−Channel
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
"20
V
ID
58
A
Continuous Drain Current RYJ−mb (Notes 1,
2, 3, 4)
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Continuous Drain Current RqJA (Notes 1, 3
& 4)
Power Dissipation
RqJA (Notes 1 & 3)
Pulsed Drain Current
Tmb = 25°C
Steady
State
Tmb = 100°C
Tmb = 25°C
Steady
State
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 28.3 A,
L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
A
7.0
3.1
PD
TA = 100°C
TA = 25°C, tp = 10 ms
MARKING DIAGRAM
10
TA = 100°C
TA = 25°C
W
54
ID
W
Junction−to−Ambient − Steady State (Note 3)
190
A
TJ, Tstg
−55 to
175
°C
IS
58
A
EAS
40
mJ
TL
260
°C
Symbol
Value
RYJ−mb
1.4
Unit
°C/W
RqJA
September, 2014 − Rev. 3
5873xx
AYWZZ
D1
D1
D2
D2
5873NL = Specific Device Code
for NVMFD5873NL
5873LW = Specific Device Code
for NVMFD5873NLWF
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
Package
Shipping†
NVMFD5873NLT1G
DFN8
(Pb−Free)
1500 / Tape &
Reel
NVMFD5873NLWFT1G
DFN8
(Pb−Free)
1500 / Tape &
Reel
Device
48
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second are higher but are dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2014
DFN8 5x6
(SO8FL)
CASE 506BT
S1
G1
S2
G2
D2 D2
IDM
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
D1 D1
1
1.6
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Parameter
S2
S1
107
Tmb = 100°C
TA = 25°C
G2
G1
41
PD
D2
D1
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NVMFD5873NL/D
NVMFD5873NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
54.9
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
Gate−to−Source Leakage Current
V
±100
mA
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
1.5
2.5
−5.8
V
mV/°C
VGS = 10 V, ID = 15 A
10.7
13
mW
VGS = 4.5 V, ID = 10 A
13.6
16.5
VDS = 5.0 V, ID = 15 A
15
S
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
1560
Output Capacitance
Coss
145
Reverse Transfer Capacitance
Crss
98
Total Gate Charge
QG(TOT)
16.5
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 48 V,
ID = 15 A
nC
1.3
4.0
8.8
VGS = 10 V, VDS = 48V, ID = 15 A
30.5
nC
10.8
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 48 V,
ID = 15 A, RG = 2.5 W
51
21
tf
42.6
td(on)
9.5
tr
13
td(off)
VGS = 10 V, VDS = 48 V,
ID = 15 A, RG = 2.5 W
tf
ns
25
6.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 15 A
TJ = 25°C
TJ = 125°C
0.8
QRR
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2
ns
14.5
9.0
18
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
V
0.7
22.4
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 15 A
1.0
nC
NVMFD5873NL
TYPICAL CHARACTERISTICS
80
80
10 V
VDS ≥ 10 V
4.5 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
3.8 V
60
3.4 V
40
VGS = 3.0 V
20
TJ = 25°C
1.0
2.0
3.0
4.0
TJ = 25°C
20
TJ = 125°C
3.5
4.0
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.020
0.015
0.010
0.005
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
4.5
0.0200
TJ = 25°C
0.0175
0.0150
VGS = 4.5 V
0.0125
VGS = 10 V
0.0100
0.0075
0.0050
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
2.4
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
3.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 15 A
TJ = 25°C
2.2
2.5
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.025
2
40
0
2.0
5.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
0.0
60
VGS = 0 V
ID = 15 A
VGS = 10 V
IDDS, LEAKAGE (nA)
2.0
1.8
1.6
1.4
1.2
1.0
10000
TJ = 150°C
TJ = 125°C
1000
0.8
0.6
−50
100
−25
0
25
50
75
100
125
150
175
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NVMFD5873NL
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
Ciss
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
2000
1500
1000
500
Coss
Crss
0
0
10
20
30
40
50
QT
8
6
Qgs
4
Qgd
TJ = 25°C
VDS = 48 V
ID = 15 A
2
0
60
0
5
10
15
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
35
80
1000
VDS = 48 V
ID = 15 A
VGS = 10 V
IS, SOURCE CURRENT (A)
70
100
tf
tr
td(off)
td(on)
10
1
1
10
100
VGS = 0 V
TJ = 25°C
60
50
40
30
20
10
0
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95 1.00
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
ID, DRAIN CURRENT (A)
t, TIME (ns)
10
0.01 ms
10
0.1 ms
1
0.1
1 ms
NVMFD5873NL
FBSOA
TA = 25°C, 650 mm2,
2 oz Cu Pad, VGS = 10 V
0.1
10 ms
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NVMFD5873NL
TYPICAL CHARACTERISTICS
100
R(t) (°C/W)
Duty Cycle = 50%
10 20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 12. Thermal Response
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5
1
10
100
1000
NVMFD5873NL
PACKAGE DIMENSIONS
DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual)
CASE 506BT
ISSUE E
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED
BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP.
4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL
AS THE TERMINALS.
5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA.
0.20 C
D
A
B
D1
8
7
6
ÉÉÉ
ÉÉÉ
ÉÉÉ
PIN ONE
IDENTIFIER
NOTE 7
1
2
2X
0.20 C
5
E1 E
4X
h
c
3
A1
4
TOP VIEW
DETAIL B
0.10 C
0.10 C
NOTE 4
C
SIDE VIEW
DETAIL A
SOLDERING FOOTPRINT*
SEATING
PLANE
NOTE 6
4.56
2X
8X
D2
D3
4X
L
4X
4.84
1.40
2.30
b1
G
8
8X
BOTTOM VIEW
6.59
E2
0.70
5
K1
MILLIMETERS
MIN
MAX
MAX
0.90
1.10
−−−
−−−
−−−
0.05
0.33
0.42
0.51
0.33
0.42
0.51
0.20
−−−
0.33
5.15 BSC
4.70
4.90
5.10
3.90
4.10
4.30
1.50
1.70
1.90
6.15 BSC
5.70
5.90
6.10
3.90
4.15
4.40
1.27 BSC
0.45
0.55
0.65
−−−
−−−
12 _
0.51
−−−
−−−
0.56
−−−
−−−
0.48
0.61
0.71
3.25
3.50
3.75
1.80
2.00
2.20
3.70
4X
N
4X
0.56
K
4
DETAIL B
M
2X
2.08
0.75
e
1
ALTERNATE
CONSTRUCTION
DETAIL A
A
DIM
A
A1
b
b1
c
D
D1
D2
D3
E
E1
E2
e
G
h
K
K1
L
M
N
b
0.10
C A B
0.05
C
4X
1.27
PITCH
5.55
1.00
NOTE 3
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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