NRTST40H100CT Very Low Forward Voltage Trench-based Schottky Rectifier Features www.onsemi.com • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability These are Pb−Free Devices VERY LOW FORWARD VOLTAGE, SCHOTTKY BARRIER RECTIFIERS 40 AMPERES, 100 VOLTS PIN CONNECTIONS 1 Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation 2, 4 3 4 Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec 1 2 3 TO−220AB CASE 221A STYLE 6 MARKING DIAGRAM AYWW TS40H100G AKA TO−220AB A Y WW AKA G = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 May, 2016 − Rev. 0 1 Publication Order Number: NRTST40H100CT/D NRTST40H100CT MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 118°C) (Rated VR, TC = 131°C) Per device Per diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 113°C) (Rated VR, Square Wave, 20 kHz, TC = 128°C) Per device Per diode Symbol Value Unit VRRM VRWM VR 100 V IF(AV) A 40 20 IFRM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) A 80 40 IFSM 250 A Operating Junction Temperature TJ −55 to +150 °C Storage Temperature Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol NRTST40H100CTG Unit RqJC RqJA 1.0 69.3 °C/W °C/W Maximum Thermal Resistance per Device (Note 1) Junction−to−Case Junction−to−Ambient 1. Assumes 150 mm2 1 oz. copper band pad, on a FR4 board. ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 10 A, TJ = 25°C) (IF = 20 A, TJ = 25°C) Typ Max 0.58 0.73 − 0.76 0.53 0.65 − 0.68 4 4 − − mA mA 16 11 50 30 mA mA 147 − pF vF (IF = 10 A, TJ = 125°C) (IF = 20 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 2) (VR = 70 V, TJ = 25°C) (VR = 70 V, TJ = 125°C) V IR (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz) Unit Cd Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% ORDERING INFORMATION Device NRTST40H100CTG Package Shipping TO−220AB (Pb−Free) 50 Units / Rail www.onsemi.com 2 NRTST40H100CT TYPICAL CHARACTERISTICS IF, INSTANTANEOUS FORWARD CURRENT (A) 100.0 TJ = 125°C TJ = 150°C 10.0 1.0 TJ = 25°C TJ = 85°C TJ = −55°C 0.1 IF, INSTANTANEOUS REVERSE CURRENT (A) 0.0 0.2 0.4 0.6 TJ = 125°C TJ = 150°C 10.0 TJ = 85°C 1.0 TJ = 25°C TJ = −55°C 0.1 0.8 1.0 1.2 0.0 1.4 0.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E−01 1.6 1.E+00 TJ = 150°C 1.E−02 1.E−01 TJ = 125°C 1.E−03 TJ = 85°C 1.E−04 TJ = 150°C 1.E−02 TJ = 125°C 1.E−03 TJ = 85°C 1.E−04 1.E−05 10 20 30 40 50 TJ = 25°C 1.E−05 TJ = 25°C 1.E−06 60 70 80 90 100 1.E−06 10 VF, INSTANTANEOUS REVERSE VOLTAGE (V) 20 30 40 50 60 70 80 90 100 VF, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 10,000 40 TJ = 25°C IF(AV), AVERAGE FORWARD CURRENT (A) C, JUNCTION CAPACITANCE (pF) 0.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) IF, INSTANTANEOUS REVERSE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100.0 1,000 100 10 RqJC = 1.5°C/W 35 dc 30 25 Square Wave 20 15 10 5 0 0.1 1 10 100 0 20 40 60 80 100 120 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Leg www.onsemi.com 3 140 70 40 dc 60 50 TJ = 150°C RqJC = 1.0°C/W PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) NRTST40H100CT Square Wave 40 30 20 10 35 IPK/IAV = 10 30 IPK/IAV = 5 25 Square Wave IPK/IAV = 20 20 15 dc 10 5 0 0 0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 16 18 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Current Derating, Device Figure 8. Forward Power Dissipation 20 22 100 50% R(t), (°C/W) 10 20% 10% 5% 2% 1 0.1 1% Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (sec) 1 Figure 9. Typical Transient Thermal Response www.onsemi.com 4 10 100 1000 NRTST40H100CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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