NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz • 5W P3dB CW Power • 15.5dB Power Gain • Low cost, surface mount SOIC package • High reliability gold metallization process • Lead-free and RoHS compliant • Subject to EAR99 Export Control DC - 6000MHz 5 Watt, 28 Volt GaN HEMT 2-Tone Specifications: VDS = 28V, IDQ = 50mA, Frequency = 2500MHz, Tone spacing = 1MHz, TC = 25°C Measured in Nitronex Test Fixture Symbol Parameter Min Typ Max Units P1dB,PEP Peak Envelope Power at 1dB Compression 5.0 7.5 - W Small Signal Gain 14.5 15.5 - dB - 2.5 - W 55 60 - % GSS PIMD3 h Peak Envelope Power at -35dBc IMD3 Drain Efficiency at 3dB Compression RF Performance (CW): VDS = 28V, IDQ = 50mA, Frequency = 2500MHz, TC = 25°C, Measured in Nitronex Test Fixture Symbol Parameter Typ Units P3dB Average Output Power at 3dB Compression 5.1 W P1dB Average Output Power at 1dB Compression 2.9 W Drain Efficiency at 3dB Compression 56 % h OFDM Performance: VDS = 28V, IDQ = 100mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame data, 3.5 MHz channel bandwidth. Peak/Avg. = 10.3dB @ 0.01% probability on CCDF. Frequency = 3500MHz, POUT,AVG = 24dBm, TC = 25°C. Measured in Load Pull System Symbol GP h EVM NPTB00004 Parameter Typ Units Power Gain 11.2 dB 9 % 1.0 % Drain Efficiency Error Vector Magnitude Page 1 NDS-002 Rev 7, April 2013 NPTB00004 DC Specifications: TC=25°C Symbol Parameter Min Typ Max Units 100 - - V - 0.5 2 mA Off Characteristics VBDS IDLK Drain-Source Breakdown Voltage (VGS = -8V, ID = 2mA) Drain-Source Leakage Current (VGS = -8V, VDS = 60V) On Characteristics VT Gate Threshold Voltage (VDS = 28V, ID = 2mA) -2.0 -1.5 -1.0 V VGSQ Gate Quiescent Voltage (VDS = 28V, ID = 50mA) -1.8 -1.3 -0.8 V RON On Resistance (VGS = 2V, ID = 15mA) - 2.0 2.2 W 1.1 1.3 - A ID Drain Current (VDS = 7V pulsed, 300ms pulse width, 0.2% duty cycle, VGS = 2V) Absolute Maximum Ratings: Not simultaneous, TC=25°C unless otherwise noted Symbol Parameter Units Max VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage -10 to 3 V 7.6 W PT Total Device Power Dissipation (Derated above 25°C) qJC Thermal Resistance (Junction-to-Case) TSTG TJ Storage Temperature Range Operating Junction Temperature 23 °C/W -65 to 150 °C 200 °C HBM Human Body Model ESD Rating (per JESD22-A114) MM Machine Model ESD Rating (per JESD22-A115) MSL Moisture Sensitivity Level (per IPC/JEDEC J-STD-020): Rating of 3 at 260 °C Package Peak Temperature NPTB00004 Page 2 1A (>250V) M1(>50V) NDS-002 Rev 7, April 2013 NPTB00004 Load-Pull Data, Reference Plane at Device Leads VDS=28V, TA=25°C unless otherwise noted Table 1: Optimum Source and Load Impedances (VDS = 28V) Frequency ZS (W) ZL (W) IDQ (mA) Optimized Tuning Condtion 900 9.2 + j23.8 52.6 + j22.8 50 CW Power and Efficiency 1800 5.2 + j0.5 24.5 + j18.3 50 CW Power and Efficiency 2140 5.0 - j2.6 17.1 + j15.0 50 CW Power and Efficiency 2500 5.4 - j10.5 14.7 + j10.0 50 CW Power and Efficiency 3500 5.0 - j21.0 11.2 + j4.7 50 CW Power and Efficiency 900 21.9 + j43.4 59.5 + j33.7 100 W-CDMA, POUT, Efficiency, -45dBc ACPR 1800 13.1 + j24.3 34.5 + j48.8 100 W-CDMA, POUT, Efficiency, -45dBc ACPR 2140 5.4 + j17.3 25.4 + j36.4 100 W-CDMA, POUT, Efficiency, -45dBc ACPR 2600 4.0 + j6.8 12.2 + j25.8 100 LTE, POUT, Efficiency, -45dBc ACPR 2500 5.0 + j16.2 13.2 + j20.4 100 OFDM, Maximum POUT, 1.5% EVM 3500 4.1 - j0.6 6.6 + j10.5 100 OFDM, Maximum POUT, 1.5% EVM 5100 17.8 - j16.4 10.7 - j4.9 100 OFDM, Maximum POUT, 1.5% EVM 5200 21.5 - j29.0 11.9 - j4.8 100 OFDM, Maximum POUT, 1.5% EVM 5700 10.2 - j13.2 11.3 - j17.0 100 OFDM, Maximum POUT, 1.5% EVM 5800 11.0 - j16.3 12.1 - j15.3 100 OFDM, Maximum POUT, 1.5% EVM ZS is the source impedance presented to the device. ZL is the load impedance presented to the device. Figure 1 - Impedances for Optimum CW Power, VDS = 28V, IDQ = 50mA NPTB00004 Page 3 NDS-002 Rev 7, April 2013 NPTB00004 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =50mA, TA=25°C unless otherwise noted. Figure 2 - Typical CW Performance Frequency = 900MHz Figure 3 - Typical CW Performance Frequency = 2500MHz Figure 4 - Typical CW Performance Frequency = 3500MHz Figure 5 - Typical CW Performance Frequency = 900 to 3500MHz Figure 6 - Typical CW Performance Over Temperature, Frequency = 2500MHz Figure 7 - Typical OFDM Performance IDQ = 100mA, Frequency = 2500MHz NPTB00004 Page 4 NDS-002 Rev 7, April 2013 NPTB00004 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =50mA, TA=25°C unless otherwise noted. Figure 8 - Typical OFDM Performance IDQ = 100mA, Frequency = 3500MHz Figure 9 - Typical W-CDMA Performance IDQ = 100mA, Frequency = 900MHz Figure 10 - Typical W-CDMA Performance IDQ = 100mA, Frequency = 1800MHz Figure 11 - Typical W-CDMA Performance IDQ = 100mA, Frequency = 2140MHz Figure 12 - Typical LTE Performance IDQ = 100mA, Frequency = 2600MHz NPTB00004 Page 5 NDS-002 Rev 7, April 2013 NPTB00004 Typical Device Characteristics VDS=28V, IDQ =50mA, TA=25°C unless otherwise noted. Figure 14 - MTTF of NRF1 Devices as a Function of Junction Temperature Figure 13 - Power Derating Curve Figure 15 - Quiescient Gate Voltage (VGSQ) Required to Reach IDQ = 50mA as a Function of Ambient Temperature NPTB00004 Page 6 NDS-002 Rev 7, April 2013 NPTB00004 Figure 16 - APP-NPTB00004-25 2500MHz Demonstration Board Figure 17 - APP-NPTB00004-25 2500MHz Demonstration Board Equivalent Circuit NPTB00004 Page 7 NDS-002 Rev 7, April 2013 NPTB00004 Table 2: APP-NPTB00004-25 2500MHz Demonstration Board Bill of Materials Name Value Tolerance Vendor Vendor Number C1 10uF 20% AVX TAJA106M016R C2 1uF 10% AVX 12101C105KAT2A C3 0.1uF 10% Murata GRM188R72A104KA35D C4 0.01uF 10% AVX 06031C103KAT2A C5 0.001uF 10% AVX 06031C102KAT2A C6 33pF 5% ATC ATC600F330B C7 100uF 20% Panasonic ECE-V1JA101P C8 1uF 10% AVX 12101C105KAT2A C9 0.1uF 10% Murata GRM188R72A104KA35D C10 0.01uF 10% AVX 06031C103KAT2A C11 0.001uF 10% AVX 06031C102KAT2A C12 33pF 5% ATC ATC600F330B C13 2.7pF +/- 0.1pF ATC ATC600F2R7B C14 10pF 1% ATC ATC600F100B C15 0.8pF +/-0.1pF ATC ATC600F0R8B C16 3.3pF +/-0.1pF ATC ATC600F3R3B R1 200 ohm 1% Panasonic ERJ-2GEJ201X R3, R5 0 ohm -- Panasonic ERJ-2GE0R00X R4 0.033 ohm 1% Panasonic ERJ-6BWJR033W NBD-012_Rev1 -- -- Alberta Printed Circuits NBD-012_Rev1 Rogers R04350, t = 30mil er = 3.5 Substrate NPTB00004 Page 8 NDS-002 Rev 7, April 2013 NPTB00004 Ordering Information1 Part Number Order Multiple Description NPTB00004DT 97 NPTB00004DR 1500 Tube; NPTB00004 in D (PSOP2) Package Tape and Reel; NPTB00004 in D (PSOP2) Package 1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com D Package Dimensions and Pinout Inches A C 8 D B 7 E 6 5 9 D/2 1 2 3 4 Chamfer A/2 9. Source Pad (Bottom) H G G1 SEATING PLANE 1. NC 1. NC 2. Gate 2. Gate 3. Gate 3. Gate 4. NC 4. NC 5. NC 6. Drain 5. NC 7. Drain 6. Drain 8. NC 7. Drain 9. Source Pad 8. NC (Bottom) Millimeters Dim Min Max Min Max A 0.189 0.196 4.80 4.98 B 0.150 0.157 3.81 3.99 C 0.107 0.123 2.72 3.12 D 0.071 0.087 1.80 2.21 E 0.230 0.244 5.84 6.19 f 0.050 BSC 1.270 BSC F 0.0138 0.0192 0.35 0.49 G 0.055 0.061 1.40 1.55 G1 0.000 0.004 0.00 0.10 H 0.0075 0.0098 0.19 0.25 L 0.016 0.035 0.41 0.89 m 0° 8° 0° 8° m SEATING PLANE L F (8X) f (6X) Mounting Footprints .150 .055 .105 .100 .180 .030 PWB Pad (8X Typ) NPTB00004 Solder Paste .020" X .040" (8X Typ) R.016 (4X Typ) .140 .145 .176 Heat Sink Pedestal Solder Mask .005" Relief (Typ) PWB Cutout Page 9 Solder Paste .080" X .120" (Typ) NDS-002 Rev 7, April 2013 NPTB00004 Nitronex, LLC 2305 Presidential Drive Durham, NC 27703 USA +1.919.807.9100 (telephone) +1.919.807.9200 (fax) [email protected] www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). 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All other product or service names are the property of their respective owners. © Nitronex, LLC 2012. All rights reserved. NPTB00004 Page 10 NDS-002 Rev 7, April 2013