T PL IA N M CO *R oH S Features Applications n RoHS compliant* n Switch Mode Power Supplies n Low profile n Portable equipment batteries n Low power loss, high efficiency n High frequency rectification n UL 94V-0 classification n DC/DC Converters LE AD FR EE n Telecommunications CD214A-B1xR Series Schottky Barrier Rectifier Chip Diode General Information Ro VE LEA HS RS D CO ION FRE M SA E PL R IA E NT * Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in a compact chip package compatible with DO-214AC (SMA) size format. The Schottky Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V. Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Maximum Repetitive Peak Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Operating Junction Temperature Range Storage Temperature Range VRRM B120R 20 B120LR 20 CD214AB140R B140LR 40 40 B160R 60 B1100R 100 Unit V IF(AV) 1 A IFSM 30 A TOPR -55 to +125 TSTG -55 to +150 -55 to +150 °C °C Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Maximum Instantaneous Forward Voltage @1 A (NOTE 1) VF DC Reverse Current IR Typical Junction Capacitance CJ Junction to Ambient RθJA Typical Thermal Resistance (NOTE 2) Junction to Lead RθJL NOTES: (1) Pulse width 300 microsecond, 1 % duty cycle. Condition or Model CD214A-B120LR CD214A-B140LR CD214A-B120R CD214A-B140R CD214A-B160R CD214A-B1100R CD214A-B120LR CD214A-B140LR VR = CD214A-B120R VRRM CD214A-B140R CD214A-B160R CD214A-B1100R VR = 4 V, f = 1.0 MHz CD214A-B120R CD214A-B140R CD214A-B160R CD214A-B1100R CD214A-B120LR CD214A-B140LR CD214A-B120R CD214A-B140R CD214A-B160R CD214A-B1100R CD214A-B120LR CD214A-B140LR Min. Typ. Max. 0.37 0.38 0.47 0.50 0.60 0.76 0.70 0.85 0.35 1.0 mA 0.02 0.2 mA 110 Unit V pF 88 55 °C/W 28 17 (2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas. *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 3312 - 2 mm SMD Trimming Potentiometer CD214A-B1xR Series Schottky Barrier Rectifier Chip Diode Performance Graphs 1.0 1.0 CD214A-B120R, -B140R, CD214A-B120R, -B140R, CD214A-B120LR, -B140LR CD214A-B120LR, CD214A-B120R,-B140LR -B140R, CD214A-B120LR, -B140LR CD214A-B160R, -B1100R CD214A-B160R, -B1100R CD214A-B160R, -B1100R 0.5 0.5 0.5 0 0 0 00 Maximum 30 Peak Forward Surge Current PeakForward ForwardSurge SurgeCurrent Current(Amps) (Amps) Peak Peak Forward Surge Current (Amps) AverageForward ForwardRectified RectifiedCurrent Current(Amps) (Amps) Average Average Forward Rectified Current (Amps) Forward 1.0Current Derating Curve 0 Resistive or Resistive or Inductive Load Inductive Load Resistive or PCBInductive Mounted on PCB MountedLoad on 5.0 x 5.0 mm 5.0 5.0 mm PCBxx Mounted (0.2 0.2 inch) on (0.25.0 x 0.2 inch) x 5.0 mm Copper Pad Areas Copper (0.2 xPad 0.2Areas inch) Copper Pad Areas 25 50 75 100 25 50 75 100 Temperature 75 100 25 Lead 50 Lead Temperature (°C) (°C) 125 125 125 30 30 25 25 25 20 20 20 15 15 15 10 10 10 5 5 5 0 0 0 00 150 150 150 8.3 ms 8.3 ms Single Half Single 8.3Half ms Sine-Wave Sine-Wave Single Half (JEDEC Method) Sine-Wave (JEDEC Method) (JEDEC Method) 0 CD214A-B120LR, -B140LR CD214A-B120LR, -B140LR CD214A-B120LR, -B140LR CD214A-B120R, -B140R CD214A-B120R, -B140R CD214A-B160R, -B1100R CD214A-B160R, -B1100R CD214A-B120R, -B140R CD214A-B160R, -B1100R 10 10 Number of Cycles 10 @ Number of Cycles @ 60 60 Hz Hz 100 100 100 Number of Cycles @ 60 Hz Lead Temperature (°C) Typical Reverse Characteristics InstantaneousForward ForwardCurrent Current(A) (A) Instantaneous Instantaneous Forward Current (A) 10 10 10 1 1 1 0.10 0.10 0.10 0.01 0.01 0.01 CD214A-B120LR, -B140LR CD214A-B120LR, -B140LR CD214A-B120R, -B140R CD214A-B120R, -B140R CD214A-B120LR, -B140LR CD214A-B160R CD214A-B160R CD214A-B120R, -B140R CD214A-B1100R CD214A-B1100R CD214A-B160R 0.001 CD214A-B1100R 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0010 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Forward 0.5 Voltage 0.6 0.7 (Volts) 0.8 0.9 1.0 0 Instantaneous 0.1 0.2 0.3 0.4 Instantaneous Forward Voltage (Volts) InstantaneousReverse ReverseCurrent Current(mA) (mA) Instantaneous Instantaneous Reverse Current (mA) Typical Instantaneous Forward Characteristics 100 100 100 10 10 10 1 1 1 0.1 0.1 0.1 CD214A-B120LR, -B140LR CD214A-B120LR, -B140LR CD214A-B120R, -B140R, CD214A-B120R, -B140R, CD214A-B120LR, -B160R, -B1100R -B140LR -B160R, -B1100R -B140R, CD214A-B120R, -B160R, -B1100R TJ = 100 °C TJ = 100 °C TJ = 100 °C TJ = 100 °C TJ = 100 °C TJ = 100 °C TJ = 25 °C TJ = 25 °C TJ = 25 °C 0.01 0.01 °C 0.01 TTJ == 25 J 25 °C TJ = 25 °C 0.001 0.001 40 60 80 100 0 20 40 60 80 100 20 0.0010 of Peak Voltage 60 80 (%) 0Percent Percent 20 of Rated Rated 40 Peak Reverse Reverse Voltage (%) 100 Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage (Volts) Typical Junction Capacitance JunctionCapacitance Capacitance(pF) (pF) Junction Junction Capacitance (pF) 400 400 400 100 100 100 10 10 0.1 0.1 10 0.1 TJ = 25 °C T = 25 °C f =J1.0 MHz f =T1.0= MHz 25 °C Vsig = J50 mVP-P Vsig f==50 1.0mVP-P MHz Vsig = 50 mVP-P CD214A-B1xL SERIES CD214A-B1xL SERIES CD214A-B1xL SERIES 10 1.0 10 1.0 Reverse Voltage (Volts) 10 1.0 Reverse Voltage (Volts) Reverse Voltage (Volts) 100 100 100 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 3312 - 2 mmSeries SMDSchottky Trimming Potentiometer CD214A-B1xR Barrier Rectifier Chip Diode Product Dimensions Recommended Pad Layout A F C DIA. B G H I D D Dimension CD214A-B1 Series F 2.60 MAX. (0.102) G 1.47 MIN. (0.058) H 1.27 MIN. (0.050) I 5.14 REF. (0.202) E Dimension CD214A-B1 Series A 4.5 ± 0.10 (0.177 ± 0.004) B 2.20 ± 0.10 (0.087 ± 0.004) C (Dia.) 0.50 (0.020) D 0.95 ± 0.20 (0.037 ± 0.008) E 0.96 +0.20/-0.10 (0.038 +0.008/-0.004) DIMENSIONS: MM (INCHES) MM (INCHES) Environmental Specifications Moisture Sensitivity Level.................................................................1 ESD Classification (HBM)............................................................. 3B Typical Part Marking How to Order CD 214A - B 1 20 L R Common Code CD = Chip Diode Package 214A = SMA/DO-214AC Compatible Model B = Schottky Barrier Series Maximum Average Forward Rectified Current 1=1A Maximum Repetitive Peak Reverse Voltage 20 = 20 V 40 = 40 V 60 = 60 V 100 = 100 V Forward Voltage Suffix L = Low Forward Voltage DIMENSIONS: DATE CODE: Y = LAST DIGIT OF YEAR WW = WEEK NUMBER 102 YWW Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. DEVICE CODE: 102 = CD214A-B120R 102L = CD214A-B120LR 104 = CD214A-B140R 104L = CD214A-B140LR 106 = CD214A-B160R 110 = CD214A-B1100R 3312 - 2 mmSeries SMDSchottky Trimming Potentiometer CD214A-B1xR Barrier Rectifier Chip Diode Packaging Information The product is dispensed in tape and reel format (see diagram below). P 0 P 1 d T E Index Hole 120 ° F D1 D P A Trailer End D2 W B ....... ....... C Device ....... ....... Leader ....... ....... ....... ....... 30 pitches W1 Start DIMENSIONS: MM (INCHES) 30 pitches Direction of Feed Item Symbol CD214A-B1 Series Carrier Width A 2.45 ± 0.10 (0.096 ± 0.004) Carrier Length B 4.75 ± 0.10 (0.187 ± 0.004) Carrier Depth C 1.51 ± 0.10 (0.059 ± 0.004) Sprocket Hole d 1.50 ± 0.10 (0.059 ± 0.004) Reel Outside Diameter D 178 ± 2.0 (7.008 ± 0.079) Reel Inner Diameter D1 50.0 MIN. (1.969) D2 13.0 ± 0.50 (0.512 ± 0.020) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 5.50 ± 0.05 (0.217 ± 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.10 (0.079 ± 0.004) Feed Hole Diameter Overall Tape Thickness T Tape Width W Reel Width W1 Quantity per Reel -- Asia-Pacific: Tel: +886-2 2562-4117 Email: [email protected] Europe: Tel: +36 88 520 390 Email: [email protected] The Americas: Tel: +1-951 781-5500 Email: [email protected] www.bourns.com 0.40 MAX. (0.016) 12.00 ± 0.30 (0.472 ± 0.012) 18.7 MAX. (0.736) 3,000 01/18 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.