NTST30100CTG, NTSB30100CT-1G, NTSJ30100CTG, NTSB30100CTG Very Low Forward Voltage Trench-based Schottky Rectifier www.onsemi.com PIN CONNECTIONS 1 Exceptionally Low VF = 0.455 V at IF = 5 A 2, 4 3 Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability These are Pb−Free Devices 4 1 2 3 TO−220AB CASE 221A STYLE 6 4 12 3 I2PAK CASE 418D STYLE 3 Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • 4 ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation 1 Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Maximum for TO−220FP CASE 221AH 2 D2PAK CASE 418B 3 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 10 sec © Semiconductor Components Industries, LLC, 2016 July, 2016 − Rev. 7 1 Publication Order Number: NTST30100CT/D NTST30100CTG, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 115°C) Symbol Value Unit VRRM VRWM VR 100 V IF(AV) A Per device Per diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 110°C) 30 15 IFRM A Per device Per diode Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 60 30 IFSM 160 A TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Operating Junction Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol NTST30100CTG, NTSB30100CT−1G NTSB30100CTG NTSJ30100CTG Unit Maximum Thermal Resistance per Diode Junction−to−Case Junction−to−Ambient RqJC RqJA 2.5 70 1.14 46.6 4.09 105 °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 7.5 A, TJ = 25°C) (IF = 15 A, TJ = 25°C) Typ Max 0.516 0.576 0.734 − − 0.85 0.455 0.522 0.627 − − 0.68 vF (IF = 5 A, TJ = 125°C) (IF = 7.5 A, TJ = 125°C) (IF = 15 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 70 V, TJ = 25°C) (VR = 70 V, TJ = 125°C) V IR mA mA 7.2 8.0 (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Unit 65 20 500 35 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% www.onsemi.com 2 NTST30100CTG, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG 100 100 TA = 150°C TA = 25°C I R , REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISITICS 10 TA = 125°C 1.0 0.1 TA = 150°C 10 TA = 125°C 1.0 0.1 TA = 25°C 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 20 30 CJ, JUNCTION CAPACITANCE (pF) 10000 TJ = 25°C 1000 100 10 0.1 100 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 30 RqJC = 1.3°C/W dc 25 20 15 SQUARE WAVE 10 5 0 0 20 Figure 3. Typical Junction Capacitance 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 Figure 4. Current Derating per Leg 60 30 55 50 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) 90 Figure 2. Typical Reverse Current IF(AV), AVERAGE FORWARD CURRENT (A) Figure 1. Typical Forward Voltage 50 70 40 60 80 VR, REVERSE VOLTAGE (VOLTS) RqJC = 1.3°C/W dc 45 40 35 30 25 SQUARE WAVE 20 15 10 5 IPK/IAV = 10 25 IPK/IAV = 5 IPK/IAV = 20 20 SQUARE WAVE 15 10 dc 5 TA = 150°C 0 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 0 140 2 4 6 8 10 12 14 16 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation www.onsemi.com 3 18 NTST30100CTG, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG TYPICAL CHARACTERISITICS R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% Duty Cycle 20% 10% 0.1 5% 2% 1% 0.01 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 100 1000 Figure 7. Typical Transient Thermal Response, Junction−to−Case for NTST30100CT and NTSB30100CT−1G R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 50% Duty Cycle 1 20% 0.1 10% 5% 2% 1% 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 t, Pulse Time (sec) R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) Figure 8. Typical Transient Thermal Response, Junction−to−Case for NTSJ30100CTG 1 50% Duty Cycle 0.1 20% 10% 5% 2% 0.01 1% 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 Figure 9. Typical Transient Thermal Response, Junction−to−Case for NTSB30100CTG www.onsemi.com 4 NTST30100CTG, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG ORDERING INFORMATION Package Shipping NTST30100CTG Device TO−220AB (Pb−Free) 50 Units / Rail NTSB30100CT−1G I2PAK (Pb−Free) 50 Units / Rail NTSJ30100CTG TO−220FP (Halide−Free) 50 Units / Rail NTSB30100CTG D2PAK (Pb−Free) 50 Units / Rail NTSB30100CTT4G D2PAK (Pb−Free) 800 / Tape & Reel MARKING DIAGRAMS AYWW TS30100Cx AKA AYWW TS30100CG AKA TO−220AB TO−220FP A Y WW AKA x G H AYWW TS30100CG AKA I2PAK = Assembly Location = Year = Work Week = Polarity Designator = G or H = Pb−Free Package = Halide−Free Package www.onsemi.com 5 AYWW TS30100CG AKA D2PAK NTST30100CTG, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE I2PAK (TO−262) CASE 418D ISSUE D C E V −B− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A W 1 2 DIM A B C D E F G H J K S V W 3 F −T− SEATING PLANE K S J G D 3 PL 0.13 (0.005) M T B H M www.onsemi.com 6 INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 NTST30100CTG, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE F A B E A P E/2 0.14 Q D M B A H1 M A1 C NOTE 3 1 2 3 L L1 3X 3X SEATING PLANE c b b2 0.25 M B A M C A2 e SIDE VIEW FRONT VIEW SECTION D−D A NOTE 6 NOTE 6 H1 D D A SECTION A−A ALTERNATE CONSTRUCTION www.onsemi.com 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.90 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.60 7.10 12.50 14.73 --2.80 3.00 3.40 2.80 3.20 NTST30100CTG, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D H 3 PL 0.13 (0.005) M T B VARIABLE CONFIGURATION ZONE M N R MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 P U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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