UTC MJE13005-K Npn silicon power transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MJE13005-K
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS

DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.

FEATURES
* VCEO(SUS)= 400 V
* Reverse bias SOA with inductive loads @ TC = 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
tC @ 3A, 100°С is 180 ns (Typ)
* 700V blocking capability
* SOA and switching applications information

APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13005L-K-x-TA3-T
MJE13005G-K-x-TA3-T
MJE13005L-K-x-TF3-T
MJE13005G-K-x-TF3-T
MJE13005L-K-x-TM3-T
MJE13005G-K-x-TM3-T
MJE13005L-K-x-TMS4-T
MJE13005G-K-x-TMS4-T
MJE13005L-K-x-TN3-R
MJE13005G-K-x-TN3-R
MJE13005L-K-x-T60-R
MJE13005G-K-x-T60-K
Note: Pin Assignment: B: Base C: Collector
E: Emitter
MJE13005L-K-x-TA3-T
(1)Packing Type
(2)Package Type

Package
TO-220
TO-220F
TO-251
TO-251S4
TO-252
TO-126
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
Tube
Tape Reel
Bulk
(1)T: Tube, R: Tape Reel, K: Bulk
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
(2) TMS4: TO-251S4, TN3: TO-252, T60: TO-126
(3)Rank
(3) x: refer to Classification of hFE1
(4)Green Package
(4) L: Lead Free, G: Halogen Free and Lead Free
MARKING
TO-220 / TO-220F / TO-251
TO-251S4 / TO-252
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
TO-126
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
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO(SUS)
400
V
Collector-Emitter Voltage (VBE=0)
VCES
700
V
Collector-Base Voltage
VCBO
700
V
Emitter Base Voltage
VEBO
9
V
Continuous
IC
4
A
Collector Current
Peak (1)
ICM
8
A
Continuous
IB
2
A
Base Current
Peak (1)
IBM
4
A
Continuous
IE
6
A
Emitter Current
Peak (1)
IEM
12
A
TO-220
75
TO-220F
40
Power Dissipation at TC=25°С
W
TO-251/TO-251S4
50
TO-252
TO-126
20
PD
TO-220
600
TO-220F
320
Derate above 25°С
mW/°С
TO-251/TO-251S4
400
TO-252
TO-126
160
Operating and Storage Junction Temperature
TJ , TSTG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-251/TO-251S4
TO-252
TO-126
Junction to Ambient
TO-220
Junction to Case
TO-220F
TO-251/TO-251S4
TO-252
TO-126
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SYMBOL
RATINGS
62.5
UNIT
θJA
80
°С/W
89
1.67
3.125
θJC
2.5
°С/W
6.25
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NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS (Note 1)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased
Clamped Inductive SOA with Base
Reverse Biased
ON CHARACTERISTICS (Note 1)
SYMBOL
MIN
VCEO(SUS) IC=10mA , IB=0
VCBO=Rated Value,
VBE(OFF)=1.5V
ICBO
VCBO=Rated Value,
VBE(OFF)=1.5V, TC=100°С
IEBO
VEB=9V, IC=0
MAX
UNIT
400
V
1
mA
5
1
mA
See Fig. 11
RBSOA
See Fig. 12
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE (SAT)
IC=0.5A, VCE=5V
IC=1A, VCE=5V
IC=2A, VCE=5V
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=2A, IB=0.5A, Ta=100°С
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=2A, IB=0.5A, TC=100°С
15
10
8
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
fT
IC=500mA, VCE=10V, f=1MHz
Output Capacitance
COB
VCB=10V, IE=0, f=0.1MHz
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
tD
Rise Time
tR
VCC=125V, IC=2A, IB1=IB2=0.4A,
tP=25μs, Duty Cycle≤1%
Storage Time
tS
Fall Time
tF
Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Note: 2. Pulse Test: PW=300μs, Duty Cycle≤2%

TYP
IS/B
hFE1
hFE2
hFE3
DC Current Gain
TEST CONDITIONS
50
60
40
0.5
0.6
1
1
1.2
1.6
1.5
4
MHz
pF
65
0.025
0.3
1.7
0.4
V
V
V
V
V
V
V
0.1
0.7
4
0.9
μs
μs
μs
μs
CLASSIFICATION OF hFE1
RANK
RANGE
A
15 ~ 20
B
20 ~ 25
UNISONIC TECHNOLOGIES CO., LTD
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C
25 ~ 30
D
30 ~ 40
E
40 ~ 50
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APPLICATION INFORMATION

Table 1.Test Conditions for Dynamic Performance
Resistive
Switching
Reverse Bias Safe Operating Area and Inductive Switching
+5V
Vcc
33
1N4933
MJE210
L
Test Circuits
0.001μF
33 1N4933
5V
Pw
DUTY CYCLE≦10%
tr, tf≦10ns
2N2222
1k
68
1N4933
IB
1k
Rc
5.1k
T.U.T.
*SELECTED FOR≧1kV
VCE
51
RB
SCOPE
D1
MJE200
47
100
1/2W
Coil Data :
VCC=20V
FERROXCUBE core #6656
Full Bobbin ( ~ 16 Turns) #16
TUT
-4.0V
2N2905
Note:
PW and Vcc Adjusted for Desired Ic
RB Adjusted for Desired IB1
+125V
Vclamp
Ic
RB
1k
+5V
0.02μF 270
Circuit Values
MR826*
-VBE(off)
GAP for 200μH/20 A
LCOIL=200μH
VCLAMP=300V
VCC=125V
RC=62Ω
D1=1n5820 or
Equiv.
RB=22Ω
OUTPUT WAVEFORMS
Test Waveforms
tF CLAMPED
IC
tF UNCLAMPED
IC(PK)
t1 Adjusted to
Obtain Ic
t
t1
VCE
tf
VCE or
VCLAMP
TIME
t2
t2
t
t1=
LCOIL(ICPK)
VCC
t2=
LCOIL(ICPK)
VCLAMP
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Test Equipment
Scope-Tektronics
475 or Equivalent
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RESISTIVE SWITCHING PERFORMANCE
Collector Current, IC (A)
Collector Current, IC(PK) (A)
Transient Thermal Resistance, r(t)
(Normalized)
Time, t (°С)
Time, t (°С)

NPN SILICON TRANSISTOR
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RESISTIVE SWITCHING PERFORMANCE (Cont.)

Fig. 6 Forward Bias Power Derating
1
SECOND BREAKDOWN
DERATING
0.8
0.6
THERMAL
DERATING
0.4
0.2
0
20
40
60
80
100
120
140
160
Case Temperature, TC (°С)
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SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Fig. 4 is based on TC = 25°С; TJ(PK) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when TC≥25°С. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Fig. 4 may be found at any case
temperature by using the appropriate curve on Fig. 6.
TJ(PK) may be calculated from the data in Fig. 10. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified
under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives the complete
RBSOA characteristics.
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
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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