BetLux BL-M12E881SG Led dot matrix Datasheet

LED DOT MATRIX
BL-M12X881XX
Features:
39.10mm (1.2”) Φ3.0 dot matrix LED display. BI-COLOR
Low current operation.
Excellent character appearance.
Easy mounting on P.C. Boards or sockets.
I.C. Compatible.
ROHS Compliance.
Electrical-optical characteristics: (Ta=25 ) (Test Condition: IF=20mA)
Part No
Row Cathode
Column Anode
Row Anode
Column Cathode
BL-M12E881SG-XX
BL-M12F881SG-XX
BL-M12E881EG-XX
Emitted Color
Super Red
BL-M12F881EG-XX
BL-M12F881DUG-XX
.
w
w
BL-M12E881UEUG-X
X
BL-M12F881UEUG-X
X
-XX: Surface / Lens color
0
Number
Ref Surface Color
White
Epoxy Color
Water
clear
w
Iv
λP
(nm)
Material
AlGaInP
660
Green
GaP/GaP
570
Orange
GaAsP/Ga
P
635
Typ
Max
TYP.(mcd)
m
o
c
.
x
u
l
t
e
b
Green
BL-M12E881DUG-XX
VF
Unit:V
Chip
2.10
2.50
200
2.20
2.50
195
2.10
2.50
190
2.20
2.50
195
GaP/GaP
570
Ultra Red
AlGaInP
660
2.10
2.50
320
Ultra Green
AlGaInP
574
2.20
2.50
250
Ultra Orange
AlGaInP
630
2.10
2.50
235
Ultra Green
AlGaInP
574
2.20
2.50
250
1
2
3
4
5
Black
White
diffused
Gray
Red
Diffused
Red
Green
Diffused
Green
Yellow
Diffused
Absolute maximum ratings (Ta=25°C)
S
G
E
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
Storage Temperature TSTG
30
75
5
30
80
5
30
80
5
30
75
5
30
75
5
30
65
5
mW
150
150
150
150
150
150
mA
Lead Soldering Temperature
TSOL
D
UG
UE
U
nit
Parameter
-40 to +80
-40 to +85
Max.260±5
for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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EMAIL: [email protected] , [email protected]
mA
V
LED DOT MATRIX
BL-M12X881XX
Package configuration & Internal circuit diagram
m
o
c
.
x
.
w
w
u
l
t
e
b
w
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
Page 2 of 3
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EMAIL: [email protected] , [email protected]
LED DOT MATRIX
BL-M12X881XX
Typical electrical-optical characteristics curves:
(A)
1.0
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
500
450
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
8
64 5
2 3
40
e
b
.
w
w
30
20
10
0
1.2
1.6
2.0
2.4
1
3.0
2.6
2.0
1.0
20
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
1
5
4
2
3
60
80
0.2
-10
0
10
20
30
40
AMBIENT TEMPERATURE Ta( )
50
60
30
20
1
6
2,4,8,A
3
5
10
0
100
20
40
60
80
100
AMBIENT TEMPERATURE Ta( )
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
4
3
2
-20
40
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
0.5
0.1
-30
40
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
RELATIVE LUMINOUS INTENSITY
1
B
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
w
3
2
5
50
0
3.0
m
o
c
.
x
lt u
4.0
FORWARD CURRENT(mA)
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
1
50
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
4
3
2
70
1
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
10,000
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
Page 3 of 3
WWW.BETLUX.COM
EMAIL: [email protected] , [email protected]
10,000
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