CYStech Electronics Corp. Spec. No. : C145A3 Issued Date : 2017.03.28 Revised Date : Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTNA29A3 Description • The BTNA29A3 is a darlington amplifier transistor • Pb-free lead plating and halogen-free package Symbol Outline BTNA29A3 TO-92 C B E B：Base C：Collector E：Emitter EBC Ordering Information Device BTNA29A3-0-TB-G BTNA29A3-0-BK-G Package TO-92 (Pb-free lead plating and halogen-free package) TO-92 (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / Tape & Box 1000 pcs/ bag, 10 bags/box, 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTNA29A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C145A3 Issued Date : 2017.03.28 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCES VEBO IC PD Tj Tstg Limits 100 100 12 0.5 625 -55~+150 -55~+150 Unit V V V A mW °C °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 83.3 200 Unit °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCES BVEBO ICBO ICES IEBO *VCE(sat) *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. 100 100 12 10K 10K 125 - Typ. 0.71 0.84 1.35 200 5 Max. 100 500 100 1.2 1.5 2.0 8 Unit V V V nA nA nA V V V MHz pF Test Conditions IC=100μA IC=100μA, VBE=0V IE=10μA VCB=80V VCE=80V VEB=10V IC=10mA, IB=0.01mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=5V, IC=10mA, f=100MHz VCB=10V, f=100MHz *Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% BTNA29A3 CYStek Product Specification Spec. No. : C145A3 Issued Date : 2017.03.28 Revised Date : Page No. : 3/8 CYStech Electronics Corp. Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.9 1.2 IB=5mA IB=1mA 0.7 IC, Collector Current(A) IC, Collector Current(A) 0.8 0.6 0.5 IB=100uA 0.4 0.3 0.2 0.1 1 0.8 IB=500uA 0.6 0.4 0.2 IB=0 0 0 0 1 2 3 4 5 VCE, Collector-to-Emitter Voltage(V) IB=0 0 6 1 Emitter Grounded Output Characteristics 3 4 1.8 IB=20mA 1.6 1.2 IB=10mA 1.4 1 IB=4mA IC, Collector Current(A) 1.4 IB=2mA 0.8 0.6 0.4 0.2 0 1 2 3 4 5 1.2 IB=10mA IB=5mA 1 0.8 0.6 0.4 IB=0 0 6 0 1 2 3 4 5 VCE, Collector-to-Emitter Voltage(V) VCE, Collector-to-Emitter Voltage(V) Current Gain vs Collector Current 1000 T a=25°C 10 VCE=5V HFE, Current Gain HFE, Current Gain 6 Current Gain vs Collector Current 100 VCE=10V VCE=5V VCE=2V 1 100 125°C 75°C 25°C 0°C -40°C 10 1 1 BTNA29A3 6 IB=50mA 0.2 IB=0 0 5 Emitter Grounded Output Characteristics 1.6 IC, Collector Current(A) 2 VCE, Collector-to-Emitter Voltage(V) 10 100 IC, Collector Current(mA) 1000 1 10 100 IC, Collector Current(mA) 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C145A3 Issued Date : 2017.03.28 Revised Date : Page No. : 4/8 Typical Characteristics(Cont.) Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 10000 VCE(SAT), Saturation Voltage(mV) HFE, Current Gain VCE=10V 100 125°C 75°C 25°C 0°C -40°C 10 1 1 1000 100 10 100 IC, Collector Current(mA) 1 1000 10000 1000 10000 VCE(SAT) @ IC=1000IB -40°C 0°C 25°C 75°C 125°C VBE(SAT), Saturation Voltage(mV) VCE(SAT), Saturation Voltage(mV) 10 100 IC, Collector Current(mA) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 1000 VBE(SAT)@IC=500IB 1000 -40°C 0°C 25°C 75°C 125°C 100 100 1 10 100 IC, Collector Current(mA) 1 1000 Saturation Voltage vs Collector Current 10 100 IC, Collector Current(mA) 1000 Saturation Voltage vs Collector Current 10000 10000 VBE(SAT)@IC=1000IB VBE(ON)@VCE=5V VBE(ON), On Voltage(mV) VBE(SAT), Saturation Voltage(mV) -40°C 0°C 25°C 75°C 125°C VCE(SAT) @ IC=500IB 1000 -40°C 0°C 25°C 75°C 125°C 1000 -40°C 0°C 25°C 75°C 125°C 100 100 1 BTNA29A3 10 100 IC, Collector Current(mA) 1000 1 10 100 IC, Collector Current(mA) 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C145A3 Issued Date : 2017.03.28 Revised Date : Page No. : 5/8 Typical Characteristics(Cont.) Capacitance vs Reverse-Biased Voltage Power Derating Curve 0.7 PD, Power Dissipation(W) Capacitance(pF) 100 Cib 10 Cob 1 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 BTNA29A3 1 10 VR, Reverse-Biased Voltage(V) 100 0 50 100 150 TA, Ambient Temperature(℃) 200 CYStek Product Specification Spec. No. : C145A3 Issued Date : 2017.03.28 Revised Date : Page No. : 6/8 CYStech Electronics Corp. TO-92 Taping Outline H2 H2A H2A H2 D2 A L H3 H4 H L1 H1 D1 F1F2 T2 T T1 DIM A D D1 D2 F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 - BTNA29A3 P1 P Item Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch W1 W D P2 Millimeters Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 253 Max. 4.83 4.20 0.53 4.83 2.90 ±0.3 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 255 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C145A3 Issued Date : 2017.03.28 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTNA29A3 CYStek Product Specification Spec. No. : C145A3 Issued Date : 2017.03.28 Revised Date : Page No. : 8/8 CYStech Electronics Corp. TO-92 Dimension α2 A Marking: B 1 2 3 Date Code NA29 □□ α3 C D H I G α1 Style: Pin 1.Emitter 2.Base 3.Collector E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTNA29A3 CYStek Product Specification