Diodes FZT751QTA 60v pnp high performance transistor in sot223 Datasheet

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Diodes Incorporated
Green
FZT751Q
60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223
Description
Applications
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of automotive applications.
•
•
Features
Mechanical Data
•
•
•
•
BVCEO > -60V
IC = -3A High Continuous Current
ICM = -6A Peak Pulse Current
Low Saturation Voltage VCE(sat) < -300mV @ -1A
•
•
•
•
•
Complementary NPN Type: FZT651Q
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
•
•
Automotive Lighting
MOSFET and IGBT Gate Driving
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.112 grams (Approximate)
SOT223
C
E
B
C
C
B
E
Top View
Top View
Pin-Out
Device Symbol
Ordering Information (Notes 4 & 5)
Product
FZT751QTA
FZT751QTC
Notes:
Compliance
Automotive
Automotive
Marking
FZT751
FZT751
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
4,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
FZT
751
FZT751Q
Document Number DS36963 Rev. 2 - 2
W
W
Y
FZT 751 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
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FZT751Q
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
-80
-60
-7
-3
-6
Unit
V
V
V
A
A
Value
2
3
62.5
41.7
12.9
-55 to +150
Unit
W
W
°C/W
°C/W
°C/W
°C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
Symbol
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
PD
RθJA
RθJL
TJ, TSTG
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
7. Same as Note 6, except the device is mounted on 50mm x 50mm 2oz copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT751Q
Document Number DS36963 Rev. 2 - 2
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10
VCE(sat)
IC Collector Current (A)
IC Collector Current (A)
Thermal Characteristics and Derating Information
Limit
1
DC
1s
100ms
100m
10ms
T amb=25°C
25mm x 25mm
2oz FR4
10m
10
VCE(sat)
Limit
1
DC
1s
100ms
10ms
100m
1ms
100µs
1
Tamb=25°C
10m
10
Safe Operating Area
50
T amb=25°C
60
25mm x 25mm
2oz FR4
50
D=0.5
30
20
Single Pulse
D=0.2
D=0.05
10
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Thermal Resistance (°C/W)
70
Thermal Resistance (°C/W)
10
VCE Collector-Emitter Voltage (V)
Safe Operating Area
100
50mm x 50mm
2oz FR4
10
25mm x 25mm
2oz FR4
1
100µ
1m
10m 100m
1
10
100
Pulse Width (s)
1k
Max Power Dissipation (W)
Single Pulse
Tamb=25°C
T amb=25°C
40
30
D=0.5
20
Document Number DS36963 Rev. 2 - 2
Single Pulse
D=0.2
10
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
3.0
50mm x 50mm
2oz FR4
2.5
25mm x 25mm
2oz FR4
2.0
1.5
1.0
0.5
0.0
Pulse Power Dissipation
FZT751Q
50mm x 50mm
2oz FR4
Transient Thermal Impedance
Transient Thermal Impedance
Max Power Dissipation (W)
100µs
1
VCE Collector-Emitter Voltage (V)
40
1ms
50mm x 50mm
2oz FR4
0
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVEBO
Min
-80
-60
-7
−
−
−
−
−
−
−
70
100
80
40
Typ
−
−
−
<1
−
<1
-0.15
-0.45
-0.9
-0.8
200
200
170
150
Max
−
−
−
-100
-10
-100
-0.3
-0.6
-1.25
-1.0
−
300
−
−
Unit
V
V
V
nA
µA
nA
fT
100
140
−
MHz
ton
toff
Cobo
−
−
−
40
450
−
−
−
30
ns
ns
pF
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
Collector-Emitter Saturation Voltage (Note 10)
VCE(sat)
Base-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
VBE(sat)
VBE(on)
DC Current Gain (Note 10)
Current Gain-Bandwidth Product
Turn-On Time
Turn-Off Time
Output Capacitance
Note:
hFE
V
V
V
−
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -60V
VCB = -60V, Tamb = +100°C
VEB = -4V
IC = -1A, IB = -100mA
IC = -3A, IB = -300mA
IC = -1A, IB = -100mA
IC = -1A, VCE = -2V
IC = -50mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -2A, VCE = -2V
VCE = -5V, IC = -100mA
f = 100MHz
VCC = -10V, IC = -500mA
IB1 = IB2 = -50mA
VCB = -10V, f = 1MHz
10. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
FZT751Q
Document Number DS36963 Rev. 2 - 2
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
FZT751Q
Document Number DS36963 Rev. 2 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
b1
Q
C
E
Gauge
Plane
Seating
Plane
e1
0.25
L
b
0°
-1
0°
e
A
A1
E1
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b
20.60 30.80 0.70
b1
2.90 3.10 03.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
7°
7°
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
C1
Y2
Dimensions Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
Y
X
FZT751Q
Document Number DS36963 Rev. 2 - 2
C
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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Document Number DS36963 Rev. 2 - 2
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