Fairchild FOD3184 3a output current, high speed mosfet/igbt gate driver optocoupler Datasheet

FOD3184
3A Output Current, High Speed MOSFET/IGBT
Gate Driver Optocoupler
Features
Applications
■ High noise immunity characterized by 50kV/µs (Typ.)
■
■
■
■
■
■
■
■
■
■
■
■
■
■
common mode rejection @ VCM = 2,000V
Guaranteed operating temperature range of
-40°C to +100°C
3A peak output current for medium power
MOSFET/IGBT
Fast switching speed
– 210ns max. propagation delay
– 65ns max pulse width distortion
Fast output rise/fall time
– Offers lower dynamic power dissipation
250kHz maximum switching speed
Wide VDD operating range from 15V to 30V
Use of P-Channel MOSFETs at output stage
enables output voltage swing close to the supply rail
(rail-to-rail output)
Under voltage lockout protection (UVLO) with
hysteresis – optimized for driving IGBTs
Safety and regulatory approvals
– UL1577, 5,000 VACRMS for 1 min.
– DIN EN/IEC 60747-5-2, 1,414 peak working
insulation voltage
• Minimum creepage distance of 8.0mm
• Minimum clearance distance of 8mm to 16mm
(option TV or TSV)
• Minimum insulation thickness of 0.5mm
Functional Block Diagram
Plasma Display Panel
High performance DC/DC convertor
High performance switch mode power supply
High performance uninterruptible power supply
Isolated Power MOSFET/IGBT gate drive
Description
The FOD3184 is a 3A Output Current, High Speed
MOSFET/IGBT Gate Drive Optocoupler. It consists of a
aluminium gallium arsenide (AlGaAs) light emitting diode
optically coupled to a CMOS detector with PMOS and
NMOS output power transistors integrated circuit power
stage. It is ideally suited for high frequency driving of
power MOSFETS/IGBT used in Plasma Display Panels
(PDPs), motor control inverter applications and high
performance DC/DC converters.
The device is packaged in an 8-pin dual in-line housing
compatible with 260°C reflow processes for lead free
solder compliance.
Package Outlines
NC 1
8 VDD
ANODE 2
7 VO2
8
8
1
1
CATHODE 3
6 VO1
NC 4
5 VSS
8
Note:
A 0.1µF bypass capacitor must be connected between pins 5 and 8.
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
8
1
1
www.fairchildsemi.com
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
February 2011
LED
VDD – VSS “Positive Going”
(Turn-on)
VDD – VSS “Negative Going”
(Turn-off)
VO
Off
0V to 30V
0V to 30V
Low
On
0V to 11.5V
0V to 10V
Low
On
11.5V to 13.5V
10V to 12V
Transition
On
13.5V to 30V
12V to 30V
High
Pin Definitions
Pin #
Name
Description
1
NC
2
Anode
Not Connected
3
Cathode
4
NC
Not Connected
LED Anode
LED Cathode
5
VSS
Negative Supply Voltage
6
VO2
Output Voltage 2 (internally connected to VO1)
7
VO1
Output Voltage 1
8
VDD
Positive Supply Voltage
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
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2
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Truth Table
As per DIN EN/IEC 60747-5-2. This optocoupler is suitable for “safe electrical insulation” only within the safety
limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Mains Voltage < 150Vrms
I–IV
For Rated Mains Voltage < 300Vrms
I–IV
For Rated Mains Voltage < 450Vrms
I–III
For Rated Mains Voltage < 600Vrms
I–III
For Rated Mains Voltage < 1000Vrms (Option T, TS)
I–III
Climatic Classification
40/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
CTI
Comparative Tracking Index
175
VPR
Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test with
tm = 1 sec., Partial Discharge < 5pC
2651
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test with
tm = 60 sec.,Partial Discharge < 5 pC
2121
VIORM
Max Working Insulation Voltage
1,414
Vpeak
VIOTM
Highest Allowable Over Voltage
6000
Vpeak
External Creepage
8
mm
External Clearance
7.4
mm
10.16
mm
0.5
mm
Case Temperature
150
°C
Input Current
25
mA
Output Power
250
mW
109
Ω
External Clearance (for Option T or TS - 0.4” Lead Spacing)
Insulation Thickness
Safety Limit Values – Maximum Values Allowed in the
Event of a Failure
TCase
IS,INPUT
PS,OUTPUT
RIO
Insulation Resistance at TS, VIO = 500V
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
3
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Safety and Insulation Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
TSTG
Storage Temperature
-40 to +125
°C
TOPR
Operating Temperature
-40 to +100
°C
Junction Temperature
-40 to +125
°C
260 for 10 sec.
°C
TJ
TSOL
Lead Solder Temperature – Wave solder
(Refer to Reflow Temperature Profile, pg. 22)
IF(AVG)
Average Input Current(1)
25
mA
IF(tr, tf)
LED Current Minimum Rate of Rise/Fall
250
ns
VR
Reverse Input Voltage
5
V
IOH(PEAK)
“High” Peak Output
Current(2)
3
A
IOL(PEAK)
“Low” Peak Output Current(2)
3
A
VDD – VSS
Supply Voltage
-0.5 to 35
V
VO(PEAK)
Output Voltage
0 to VDD
V
250
mW
295
mW
Dissipation(3)
PO
Output Power
PD
Total Power Dissipation(3)
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
Value
Units
Power Supply
15 to 30
V
IF(ON)
Input Current (ON)
10 to 16
mA
VF(OFF)
Input Voltage (OFF)
-3.0 to 0.8
V
VDD – VSS
Parameter
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
4
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Symbol
Parameter
IOH
High Level Output Current
IOL
Low Level Output Current
Test Conditions
Min.
VOH = (VDD – VSS – 1V)
Typ.
Max.
Unit
-0.9
-0.5
A
VOH = (VDD – VSS – 6V)
Output Voltage(4)(5)
VOH
High Level
VOL
Low Level Output Voltage(4)(5)
-2.5
VOL = (VDD – VSS + 1V)
0.5
VOL = (VDD – VSS + 6V)
2.5
1
A
IO = -100mA, IF = 10mA VDD – 0.5
IO = -2.5A, IF = 10mA
V
VDD – 7
IO = 100mA , IF = 0mA
VSS + 0.5
IO = 2.5A, IF = 0mA
V
VSS + 7
IDDH
High Level Supply Current
Output Open,
IF = 10 to 16mA
2.6
3.5
mA
IDDL
Low Level Supply Current
Output Open,
VF = -3.0 to 0.8V
2.5
3.5
mA
IFLH
Threshold Input Current Low to
High
IO = 0mA, VO > 5V
3.0
7.5
mA
VFHL
Threshold Input Voltage High to Low IO = 0mA, VO < 5V
0.8
Input Forward Voltage
IF = 10mA
1.1
∆VF / TA
Temperature Coefficient of Forward
Voltage
IF = 10mA
VUVLO+
UVLO Threshold
VO > 5V, IF = 10mA
11.5
13.0
13.5
V
VO < 5V, IF = 10mA
10.0
11.5
12.0
V
VF
VUVLO–
Input Reverse Breakdown Voltage
IR = 10µA
CIN
Input Capacitance
f = 1MHz, VF = 0V
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
1.43
1.8
-1.5
UVLOHYST UVLO Hysteresis
BVR
V
V
mV/°C
1.5
V
25
pF
5
V
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FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Electrical-Optical Characteristics (DC)
Apply over all recommended conditions, typical value is measured at VDD = 30V, VSS = 0V, TA = 25°C,
unless otherwise specified.
Apply over all recommended conditions, typical value is measured at VDD = 30V, VSS = 0V, TA = 25°C,
unless otherwise specified.
Symbol
Parameter
Test Conditions Min.
tPLH
Propagation Delay Time to High Output Level(6)
tPHL
Propagation Delay Time to Low Output Level(6)
PWD
Pulse Width Distortion(7)
IF = 10mA,
Rg = 10Ω,
f = 250kHz,
Duty Cycle = 50%,
Cg = 10nF
Propagation Delay Difference Between Any
PDD
(tPHL – tPLH) Two Parts(8)
tr
Rise Time
tf
Fall Time
tUVLO ON
UVLO Turn On Delay
tUVLO OFF
UVLO Turn Off Delay
Typ.* Max.
Unit
50
120
210
50
145
210
ns
35
65
ns
90
ns
-90
CL = 10nF,
Rg = 10Ω
| CMH |
Output High Level Common Mode Transient
Immunity(9) (10)
TA = +25°C,
If = 10mA to 16mA,
VCM = 2kV,
VDD = 30V
35
| CML |
Output Low Level Common Mode Transient
Immunity(9) (11)
TA = +25°C,
Vf = 0V,
VCM = 2kV,
VDD = 30V
35
ns
38
ns
24
ns
2.0
µs
0.3
µs
50
kV/µs
50
kV/µs
*Typical values at TA = 25°C
Isolation Characteristics
Symbol Parameter
Test Conditions
VISO
Withstand Isolation Voltage(12) (13) TA = 25°C,
R.H. < 50%, t = 1min.,
II-O ≤ 10µA
RI-O
Resistance (input to output)(13)
VI-O = 500V
CI-O
Capacitance (input to output)
Freq. = 1MHz
Min.
Typ.*
5000
Max.
Unit
Vrms
1011
Ω
1
pF
*Typical values at TA = 25°C
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
6
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Switching Characteristics
5.
6.
Maximum pulse width = 1ms, maximum duty cycle = 20%.
tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the
falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input
pulse to the 50% level of the rising edge of the VO signal.
7.
PWD is defined as | tPHL – tPLH | for any given device.
The difference between tPHL and tPLH between any two FOD3184 parts under same operating conditions, with
equal loads.
9. Pin 1 and 4 need to be connected to LED common.
10. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse
VCM to assure that the output will remain in the high state (i.e. VO > 15V).
8.
11. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse,
VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V).
12. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms,
60Hz for 1 second (leakage detection current limit II-O < 10µA).
13. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted
together.
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
7
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Notes:
1. Derate linearly above +79°C free air temperature at a rate of 0.37mA/°C.
2. Maximum pulse width = 10µs.
3 Derate linearly above +79°C, free air temperature at the rate of 5.73mW/°C.
4. In this test, VOH is measured with a dc load current of 100mA. When driving capacitive load VOH will approach VDD
as IOH approaches zero amps.
Fig. 2 Output High Voltage Drop vs. Ambient Temperature
0.5
(VOH - VDD) – HIGH OUTPUT VOLTAGE DROP (V)
(VOH - VDD) – HIGH OUTPUT VOLTAGE DROP (V)
Fig. 1 Output High Voltage Drop vs. Output High Current
Frequency = 200Hz
Duty Cycle = 0.1%
IF = 10mA to 16mA
VDD = 15V to 30V
VSS = 0V
0
-0.5
-1.0
TA = -40°C
-1.5
TA = 25°C
-2.0
TA =100°C
-2.5
-3.-0
-3.5
0
0.5
1.0
1.5
2.0
2.5
0.00
-0.05
VDD = 15V to 30V
VSS = 0V
IF = 10mA to 16mA
IO = -100mA
-0.10
-0.15
-0.20
-0.25
-0.30
-40
-20
Fig. 3 Output High Current vs. Ambient Temperature
40
60
80
100
8
Frequency = 200Hz
Duty Cycle = 0.2%
IF = 10mA to 16mA
VDD = 15V to 30V
IOH – OUTPUT HIGH CURRENT (A)
IOH – OUTPUT HIGH CURRENT (A)
20
Fig. 4 Output High Current vs. Ambient Temperature
8
6
VO = 6V
4
VO = 3V
2
0
-40
-20
0
20
40
60
80
Frequency = 100Hz
Duty Cycle = 0.5%
IF = 10mA to 16mA
VDD = 15V to 30V
6
VO = 6V
4
VO = 3V
2
0
-40
100
-20
TA – AMBIENT TEMPERATURE (°C)
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
Fig. 5 Output Low Voltage vs. Output High Current
Fig. 6 Output Low Voltage vs. Ambient Temperature
4
0.00
Frequency = 200Hz
Duty Cycle = 99.9%
VF(off) = 0.8V
VDD = 15V to 30V
VSS = 0V
3
TA =100°C
VOL – OUTPUT LOW VOLTAGE (V)
VOL – OUTPUT LOW VOLTAGE (V)
0
TA – AMBIENT TEMPERATURE (°C)
IOH – OUTPUT HIGH CURRENT (A)
TA = 25°C
2
TA = -40°C
1
0.5
1.0
1.5
2.0
2.5
IOH – OUTPUT HIGH CURRENT (A)
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
VDD = 15V to 30V
VSS = 0V
VF = -3V to 0.8V
IO = -100mA
-0.10
-0.15
-0.20
-0.25
-0.30
-40
0
0
-0.05
-20
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
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FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Typical Performance Curves
Fig. 7 Output Low Current vs. Ambient Temperature
Fig. 8 Output Low Current vs. Ambient Temperature
8
Frequency = 200Hz
Duty Cycle = 99.8%
VF = 0.8V
VDD = 15V to 30V
IOL – OUTPUT LOW CURRENT (A)
IOL – OUTPUT LOW CURRENT (A)
8
6
VO = 6V
4
VO = 3V
2
0
-40
-20
0
20
40
60
80
Frequency = 100Hz
Duty Cycle = 99.5%
VF = 0.8V
VDD = 15V to 30V
6
VO = 6V
4
VO = 3V
2
0
-40
100
TA – AMBIENT TEMPERATURE (°C)
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
Fig. 10 Supply Current vs. Supply Voltage
Fig. 9 Supply Current vs. Ambient Temperature
3.6
3.6
IDD – SUPPLY CURRENT (mA)
VDD = 15V to 30V
VSS = 0V
IF = 0mA (for IDDL)
IF = 10mA (for IDDH)
3.4
IDD – SUPPLY CURRENT (mA)
-20
3.2
IDDH(30V)
3.0
IDDL(30V)
2.8
IDDH(15V)
2.6
IDDL(15V)
IF = 0mA (for IDDL)
IF = 10mA (for IDDH)
VSS = 0V
TA = 25°C
3.2
IDDH
2.8
IDDL
2.4
2.4
2.2
-40
2.0
-20
0
20
40
60
80
15
100
20
30
Fig. 12 Propagation Delay vs. Supply Voltage
250
3.6
VDD = 15V to 30V
VSS = 0V
Output = Open
tP – PROPAGATION DELAY (ns)
IFLH – LOW-to-HIGH INPUT CURRENT THRESHOLD (mA)
Fig. 11 Low-to-High Input Current Threshold
vs. Ambient Temperature
3.4
25
VDD – SUPPLY VOLTAGE (V)
TA – AMBIENT TEMPERATURE (°C)
3.2
3.0
2.8
2.6
IF = 10mA to 16mA
TA = 25°C
RG = 10Ω
CG = 10nF
Duty Cycle = 50%
Frequency = 250kHz
200
150
tPHL
tPLH
100
2.4
2.2
-40
50
-20
0
20
40
60
80
15
100
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
18
21
24
27
30
VDD – SUPPLY VOLTAGE (V)
TA – AMBIENT TEMPERATURE (°C)
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FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Typical Performance Curves (Continued)
Fig. 13 Propagation Delay vs. LED Forward Current
Fig. 14 Propagation Delay vs. Ambient Temperature
450
VDD = 15V to 30V
TA = 25°C
RG = 10Ω
CG = 10nF
Duty Cycle = 50%
Frequency = 250kHz
200
tP – PROPAGATION DELAY (ns)
tP – PROPAGATION DELAY (ns)
250
150
tPHL
tPLH
100
IF = 10mA to 16mA
VDD = 15V to 30V
RG = 10Ω
CG = 10nF
Duty Cycle = 50%
Frequency = 250kHz
350
250
tPHL
150
tPLH
50
6
8
10
12
14
50
-40
18
IF – FORWARD LED CURRENT (mA)
20
40
60
80
100
Fig. 16 Propagation Delay vs. Series Load Capacitance
450
450
IF = 10mA to 16mA
VDD = 15V to 30V
CG = 10nF
Duty Cycle = 50%
Frequency = 250kHz
tP – PROPAGATION DELAY (ns)
tP – PROPAGATION DELAY (ns)
0
TA – AMBIENT TEMPERATURE (°C)
Fig. 15 Propagation Delay vs. Series Load Resistance
350
250
150
-20
tPHL
IF = 10mA to 16mA
VDD = 15V to 30V
RG = 10Ω
Duty Cycle = 50%
Frequency = 250kHz
350
250
150
tPHL
tPLH
tPLH
50
50
0
10
20
30
40
50
0
RG – SERIES LOAD RESISTANCE (Ω)
20
40
60
80
100
CG – SERIES LOAD CAPACITANCE (nF)
Fig. 17 Transfer Characteristics
Fig. 18 Input Forward Current vs. Forward Voltage
35
100
VDD = 30V
TA = 25°C
IF – FORWARE CURRENT (mA)
VO – OUTPUT VOLTAGE (V)
30
25
20
15
10
10
1
TA =100°C
0.1
-40°C
25°C
0.01
5
0
0
0.5
1.0
1.5
2.0
0.001
0.6
2.5
IF – FORWARD LED CURRENT (mA)
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
0.8
1.0
1.2
1.4
1.6
1.8
VR – FORWARE VOLTAGE (V)
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FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Typical Performance Curves (Continued)
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Typical Performance Curves (Continued)
Fig. 19 Under Voltage Lockout
20
VO – OUTPUT VOLTAGE (V)
18
16
14
(13.00V)
12
10
8
6
4
2
(11.40V)
0
0
5
10
15
20
(VDD – VSS) – SUPPLY VOLTAGE (V)
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
11
Power Supply
+
+
C1
0.1µF
VDD = 15V to 30V
C2
47µF
Pulse Generator
PW = 4.99ms
Period = 5ms
ROUT = 50Ω
1
8
2
7
3
6
Pulse-In
Iol
R2
100Ω
D1
VOL
LED-IFmon
4
Power Supply
+
+
C3
0.1µF
V = 6V
C4
47µF
5
R1
100Ω
To Scope
Test Conditions:
Frequency = 200Hz
Duty Cycle = 99.8%
VDD = 15V to 30V
VSS = 0V
VF(OFF) = -3.0V to 0.8V
Figure 20. IOL Test Circuit
Power Supply
+
+
C1
0.1µF
VDD = 15V to 30V
C2
47µF
Pulse Generator
PW = 10µs
Period = 5ms
ROUT = 50Ω
1
8
2
7
Pulse-In
+
+
C3
0.1µF
Ioh
R2
100Ω
3
6
4
5
Power Supply
V = 6V
–
VOH
LED-IFmon
C4
47µF
D1
Current
Probe
To Scope
R1
100Ω
Test Conditions:
Frequency = 200Hz
Duty Cycle = 0.2%
VDD = 15V to 30V
VSS = 0V
IF = 10mA to 16mA
Figure 21. IOH Test Circuit
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
12
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Test Circuit
1
8
2
7
0.1µF
+
–
IF = 10 to 16mA
VO
6
3
VDD = 15 to 30V
100mA
4
5
Figure 22. VOH Test Circuit
1
8
2
7
100mA
+
–
0.1µF
3
6
4
5
VDD = 15 to 30V
VO
Figure 23. VOL Test Circuit
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
13
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Test Circuit (Continued)
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Test Circuit (Continued)
1
8
2
7
0.1µF
IF = 10 to 16mA
3
6
4
5
+
–
VDD = 30V
+
–
VDD = 30V
VO
Figure 24. IDDH Test Circuit
+
–
1
8
2
7
0.1µF
VF = -3.0 to 0.8V
3
6
4
5
VO
Figure 25. IDDL Test Circuit
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
14
IF
1
8
2
7
3
6
4
5
0.1µF
+
–
VDD = 15 to 30V
+
–
VDD = 15 to 30V
VO > 5V
Figure 26. IFLH Test Circuit
+
–
1
8
2
7
0.1µF
VF = –3.0 to 0.8V
3
6
4
5
VO
Figure 27. VFHL Test Circuit
1
8
2
7
0.1µF
+
–
IF = 10mA
3
6
4
5
VO = 5V
15V or 30V
VDD Ramp
Figure 28. UVLO Test Circuit
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
15
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Test Circuit (Continued)
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Test Circuit (Continued)
1
8
2
7
0.1µF
+
–
Probe
F = 250kHz
DC = 50%
3
6
4
5
VO
+
–
VDD = 15 to 30V
Rg = 10Ω
Cg = 10nF
50Ω
IF
tr
tf
90%
50%
VOUT
10%
tPLH
tPHL
Figure 29. tPHL, tPLH, tr and tf Test Circuit and Waveforms
IF
1
8
2
7
A
0.1µF
+
–
B
5V
+
–
3
6
4
5
VDD = 30V
VO
+–
VCM = 2,000V
VCM
0V
∆t
VO
VOH
Switch at A: IF = 10mA
VO
VOL
Switch at B: IF = 0mA
Figure 30. CMR Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
16
Through Hole
0.4" Lead Spacing (Option T)
9.40–9.91
9.40–9.91
Pin 1
Pin 1
6.35–6.86
6.35–6.86
1.14–1.78
3.68–3.94
5.08
MAX
3.68–3.94
1.14–1.78
3.05–3.90
0.51 MIN
0.41–0.56
(0.78)
2.54 BSC
5.08
MAX
0.20–0.40
7.62 TYP
0.51 MIN
0.41–0.56
2.54 BSC
3.05–3.90
15.0° MAX
10.16 TYP
(0.78)
0.20–0.40
Surface Mount – 0.3" Lead Spacing (Option S)
(2.54)
(1.78)
9.40–9.91
Pin 1
(1.54)
(7.49)
6.35–6.86
(10.54)
(0.76)
Recommended Land Pattern
(Option S)
3.68–3.94
1.14–1.78
5.08
MAX
0.20–0.40
(0.78)
0.51 MIN
(0.41–0.56)
0.40 MIN
Both sides
2.54 BSC
8.00 MIN
10.30 MAX
Note:
1. All dimensions are in millimeters.
2. Dimensions are exclusive of burrs, mold fash, and tie bar extrusion.
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
17
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Package Dimensions
Surface Mount – 0.4" Lead Spacing (Option TS)
9.40–9.91
(2.54)
1.50
(1.78)
(1.54)
ø1.00 TYP
(9.96)
6.35–6.86
(13.00)
(0.76)
Recommended Land Pattern
(Option S)
3.68–3.94
1.14–1.78
7.62 TYP
5.08
MAX
0.20–0.40
(0.78)
0.51 MIN
2.54 TYP
0.40 MIN
Both sides
10.16
12.60 MAX
Note:
1. All dimensions are in millimeters.
2. Dimensions are exclusive of burrs, mold fash, and tie bar extrusion.
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
18
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Package Dimensions (Continued)
Part Number
Package
Packing Method
FOD3184
DIP 8-Pin
Tube (50 units per tube)
FOD3184S
SMT 8-Pin (Lead Bend)
Tube (50 units per tube)
FOD3184SD
SMT 8-Pin (Lead Bend)
Tape and Reel (1,000 units per reel)
FOD3184V
DIP 8-Pin, DIN EN/IEC 60747-5-2 option
Tube (50 units per tube)
FOD3184SV
SMT 8-Pin (Lead Bend), DIN EN/IEC 60747-5-2 option
Tube (50 units per tube)
FOD3184SDV
SMT 8-Pin (Lead Bend), DIN EN/IEC 60747-5-2 option
Tape and Reel (1,000 units per reel)
FOD3184TV
DIP 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option
Tube (50 units per tube)
FOD3184TSV
SMT 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option
Tube (50 units per tube)
FOD3184TSR2V SMT 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option
Tape and Reel (700 units per reel)
Marking Information
1
3184
XX YY B
V
3
2
6
5
4
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with DIN
EN/IEC 60747-5-2 option – See order entry table)
4
Two digit year code, e.g., ‘11’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
19
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Ordering Information
D0
P0
t
K0
P2
E
F
A0
W1
d
t
P
User Direction of Feed
Symbol
W
W
B0
Description
D1
Dimension in mm
Tape Width
16.0 ± 0.3
Tape Thickness
0.30 ± 0.05
P0
Sprocket Hole Pitch
4.0 ± 0.1
D0
Sprocket Hole Diameter
1.55 ± 0.05
E
Sprocket Hole Location
1.75 ± 0.10
F
Pocket Location
7.5 ± 0.1
2.0 ± 0.1
P2
P
Pocket Pitch
A0
Pocket Dimensions
12.0 ± 0.1
10.30 ±0.20
B0
10.30 ±0.20
K0
4.90 ±0.20
W1
d
R
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
Cover Tape Width
13.2 ± 0.2
Cover Tape Thickness
0.1 max
Max. Component Rotation or Tilt
10°
Min. Bending Radius
30
www.fairchildsemi.com
20
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Carrier Tape Specifications – Option S
D0
P0
t
K0
P2
E
F
A0
W1
d
P
User Direction of Feed
Symbol
W
W
B0
Description
D1
Dimension in mm
Tape Width
24.0 ± 0.3
Tape Thickness
0.40 ± 0.1
P0
Sprocket Hole Pitch
4.0 ± 0.1
D0
Sprocket Hole Diameter
1.55 ± 0.05
E
Sprocket Hole Location
1.75 ± 0.10
F
Pocket Location
11.5 ± 0.1
t
2.0 ± 0.1
P2
P
Pocket Pitch
A0
Pocket Dimensions
16.0 ± 0.1
12.80 ± 0.1
B0
10.35 ± 0.1
K0
5.7 ±0.1
W1
d
R
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
Cover Tape Width
21.0 ± 0.1
Cover Tape Thickness
0.1 max
Max. Component Rotation or Tilt
10°
Min. Bending Radius
30
www.fairchildsemi.com
21
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Carrier Tape Specifications – Option TS
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
Reflow Profile
Temperature (°C)
TP
260
240
TL
220
200
180
160
140
120
100
80
60
40
20
0
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
tP
Tsmax
tL
Preheat Area
Tsmin
ts
120
240
360
Time 25°C to Peak
Time (seconds)
Profile Freature
Pb-Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60–120 seconds
Ramp-up Rate (tL to tP)
3°C/second max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60–150 seconds
Peak Body Package Temperature
260°C +0°C / –5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp-down Rate (TP to TL)
6°C/second max.
Time 25°C to Peak Temperature
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
8 minutes max.
www.fairchildsemi.com
22
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower
AX-CAP®*
BitSiC
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax
ESBC
F-PFS
FRFET®
SM
Global Power Resource
GreenBridge
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
Making Small Speakers Sound Louder
and Better™
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
mWSaver®
OptoHiT
OPTOLOGIC®
OPTOPLANAR®
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series
FACT®
FAST®
FastvCore
FETBench
FPS
®*
®
®
PowerTrench
PowerXS™
Programmable Active Droop
QFET®
QS
Quiet Series
RapidConfigure

Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM®
STEALTH
SuperFET®
SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS®
SyncFET
Sync-Lock™
TinyBoost®
TinyBuck®
TinyCalc
TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
TRUECURRENT®*
SerDes
UHC®
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS™
仙童™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain
system whose failure to perform can be reasonably expected to
life, and (c) whose failure to perform when properly used in
cause the failure of the life support device or system, or to affect its
accordance with instructions for use provided in the labeling, can be
safety or effectiveness.
reasonably expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors
are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical
and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise.
Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I68
© Fairchild Semiconductor Corporation
www.fairchildsemi.com