Rohm BD88400FJ No bulky dc-blocking capacitors required Datasheet

Datasheet
80-mW Coupling Capacitorless
Stereo Headphone Amplifiers
BD88400FJ
General Description
Package
BD88400FJ is an output coupling capacitorless
headphone amplifier. This IC has a built-in regulated
negative voltage generator type that generates the direct
regulated negative voltage from the supply voltage. It is
possible to drive headphones in a ground standard with
both voltage of the positive voltage (+2.4V) and the
negative voltage (-2.4V). Therefore a large capacitance
output coupling capacitor becomes needless and can
reduce cost, board area and height of the part.
In addition, there is no signal degradation at the low
range caused by the output coupling capacitor and
output load impedance, thus a rich low tone can be
outputted.
W(Typ) x D(Typ) x H(Max)
SOP-J14
8.65mm x 6.00mm x 1.65mm
Features
„
„
„
„
„
„
„
„
No Bulky DC-Blocking Capacitors Required
No Degradation of Low-Frequency Response Due
to Output Capacitors
Ground-Referenced Outputs
Gain setting: Variable Gain with External Resistors
Low THD+N
Low Supply Current
Integrated Negative Power Supply
Integrated Short-Circuit and Thermal-Overload
Protection
Applications
Home Audio, TVs, Portable Audio Players, PCs, Digital
Cameras, Electronic Dictionaries, Voice Recorders,
Bluetooth Headsets, etc.
Key Specifications and Lineup
Supply Voltage [V]
+2.4 to +5.5
Supply Current [mA]
Gain [V/V]
Maximum Output Power [mW]
THD+N [%]
Noise Voltage [µVrms]
PSRR [dB]
○Product structure:Silicon monolithic integrated circuit
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
2.0 (No Signal)
Variable Gain with External Resistor
80
(VDD=3.3V,RL=16Ω, THD+N≤1%,f=1kHz)
0.006
(VDD=3.3V,RL=16Ω,Po=10mW,f=1kHz)
10
-80
(f=217Hz)
○This product has no designed protection against radioactive rays
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07.Aug.2014 Rev.002
Datasheet
BD88400FJ
Typical Application Circuit
SHUTDOWN
Control
Lch Input
Cil
1.0μF
1
INL
SHDNLB
SHDNRB
Ri
4
10kΩ
Rf
10kΩ
3.3V
14
SVDD
SVDD
3.3V
12
Csvdd
1.0μF
PVDD
5
SVDD
14kΩ
Cpvdd
1.0μF
11
C1P
Part
Function
Value
Remarks
CF
Flying
Capacitor
2.2µF
Temp. Characteristic:
Class-B
CH
Hold
Capacitor
2.2µF
Temp. Characteristic:
Class-B
CPVDD
Bypass
Capacitor
1.0µF
Temp. Characteristic:
Class-B
CSVDD
Bypass
Capacitor
1.0µF
Temp. Characteristic:
Class-B
Cil
Coupling
Capacitor
1.0µF
Temp. Characteristic:
Class-B
Cir
Coupling
Capacitor
1.0µF
OUTL
+
6
SVSS
SVDD
SGND
SHDNRB
PGND
CF
2.2μF
7
CHARGE
PUMP
SVDD
UVLO/
SHUTDOWN
CONTROL
SHORT
PROTECTION
TSD
CH
2.2μF
C1N
CHARGE
PUMP
CONTROL
PVSS
SGND
SVSS
SVDD
PVDD
8
OUTR
+
CLOCK
GENERATOR
13
14kΩ
-
9
SVDD
SVSS
SVSS
3
INR
SGND
SGND
10
2
Rf
Ri
10kΩ
10kΩ
Cir
1.0μF
Ri
Rch Input
Rf
Input
Resistor
Feedback
Resistor
10kΩ
10kΩ
Temp. Characteristic:
Class-B
MCR006YZPJ103
(ROHM)
MCR006YZPJ103
(ROHM)
In BD88400FJ, the Pass Gain follows formula (4). The Pass Gain and the resistor Rf is limited by table.1.
Gain =
Rf
Ri
(4)
Table 1. Pass Gain and Resistor Limit
Min
Typ
Max
Unit
Pass Gain
0.5
1.0
2.0
V/V
Rf
1.0
10
-
kΩ
Ri
-
10
-
kΩ
Item
Ri is not limited. But, if this resistor Ri is very small, the signal degradation happens at the low frequency (Refer to formula
(2)).
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TSZ22111・15・001
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Datasheet
BD88400FJ
Pin Configuration
(Top View)
1 SHDNRB
INL 14
2 INR
3 SGND
OUTR 13
BD88400FJ SVDD 12
4 SHDNLB
OUTL 11
5 PVDD
SVSS 10
6 C1P
PVSS 9
7 PGND
C1N 8
Pin Descriptions
No.
Pin Name
1
SHDNRB
Function
Headphone Amplifier (Rch) Shutdown Control
(H:active, L:shutdown)
Headphone Amplifier (Rch) input
Symbol
Ground for Headphone Amplifier
Headphone Amplifier (Lch) Shutdown Control
(H:active, L:shutdown)
Positive Power Supply for Charge Pump
E
E
2
INR
3
SGND
C
4
SHDNLB
5
PVDD
6
C1P
Flying Capacitor Positive
A
7
PGND
Ground for Charge Pump
-
Flying Capacitor Negative
B
Negative Supply Voltage output
F
-
8
C1N
9
PVSS
10
SVSS
Negative Supply Voltage for Signal
-
11
OUTL
Headphone Amplifier (Lch) output
D
12
SVDD
Ground for Headphone Amplifier
-
13
OUTR
14
INL
Headphone Amplifier (Rch) output
D
Headphone Amplifier (Lch) input
C
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TSZ22111・15・001
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Datasheet
BD88400FJ
INL
1
SHDNLB
SHDNRB
Block Diagram
4
14
SVDD
SVDD
12
PVDD
5
SVDD
14kΩ
OUTL
-
11
C1P
+
6
SVSS
SVDD
SGND
SHDNRB
PGND
7
CHARGE
PUMP
SVDD
UVLO/
SHUTDOWN
CONTROL
C1N
8
PVDD
CHARGE
PUMP
CONTROL
PVSS
SHORT
PROTECTION
TSD
SGND
SVSS
SVDD
OUTR
+
CLOCK
GENERATOR
14kΩ
13
-
9
SVDD
SVSS
SVSS
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
3
INR
SGND
SGND
4/27
10
2
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07.Aug.2014 Rev.002
Datasheet
BD88400FJ
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
SGND to PGND Voltage
VGG
0.0
V
SVDD to PVDD Voltage
VDD
-0.3 to +0.3
V
SVSS to PVSS Voltage
VSS
0.0
V
SGND or PGND to SVDD, PVDD Voltage (Note 1)
VDG
-0.3 to +6.0
V
SVSS, PVSS to SGND Or PGND Voltage
VSG
-3.5 to +0.3
V
SGND to IN_- Voltage
VIN
(SVSS-0.3) to 2.8
V
SGND to OUT_- Voltage
VOUT
(SVSS-0.3) to 2.8
V
PGND to C1P- Voltage
VC1P
(PGND-0.3) to (PVDD+0.3)
V
PGND to C1N- Voltage
VC1N
(PVSS-0.3) to (PGND+0.3)
V
SGND to SHDN_B- Voltage
VSH
(SGND-0.3) to (SVDD+0.3)
V
Input Current
IIN
-10 to +10
mA
Power Dissipation (Note 2)
Pd
1.02
W
Tstg
-55 to +150
°C
Tjmax
+150
°C
Storage Temperature Range
Maximum Junction Temperature
(Note 1) Pd must not be exceeded.
(Note 2) When mounted on 70mm×70mm×1.6mm FR4, 1-layer glass epoxy board. Derate by 8.19mW/°C when operating above Ta=25°C
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Recommended Operating Conditions
Parameter
Supply Voltage Range
Operating Temperature Range
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
Rating
Symbol
Min
Typ
Max
Unit
VSVDD,VPVDD
2.4
-
5.5
V
TOPR
-40
-
+85
°C
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07.Aug.2014 Rev.002
Datasheet
BD88400FJ
Electrical Characteristics
Unless otherwise specified, T Ta=25°C, SVDD=PVDD=3.3V, SGND=PGND=0V, SHDNLB=SHDNRB=SVDD, CF=CH=2.2µF,
RL=No load, Ri=Rf=10kΩ
Limit
Parameter
Symbol
Unit
Conditions
Min
Typ
Max
Supply Current
Shutdown Supply Current
IST
-
0.1
2
µA
IDD1
-
1.3
-
mA
IDD2
-
2.0
7.4
mA
H Level Input Voltage
VIH
1.95
-
-
V
L Level Input Voltage
VIL
-
-
0.70
V
ILEAK
-
-
±1
µA
Shutdown to Full Operation
tSON
-
80
-
µs
Offset Voltage
VIS
-
±0.5
±6.0
mV
30
60
-
mW
40
80
-
mW
-
0.008
0.056
%
-
0.006
0.100
%
AV
-
-1.00
-
V/V
ΔAV
-
1
-
%
Noise
VN
-
10
-
Slew Rate
SR
-
0.15
-
V/µs
Maximum Capacitive Load
CL
-
200
-
pF
Crosstalk
CT
-
-90
-
dB
PSRR
-
-80
-
dB
Charge-Pump
Oscillator Frequency
fOSC
200
300
430
kHz
Thermal-Shutdown Threshold
TSD
-
145
-
°C
Thermal-Shutdown Hysteresis
THYS
-
5
-
°C
Quiescent Supply Current
SHDNLB=SHDNRB=L
(SHDNLB,SHDNRB)=(H,L) or (L,H),
No Signal
SHDNLB=SHDNRB=H,
No Signal
SHDN_B Terminal
Input Leak Current
Headphone Amplifier
Maximum Output Power
Total Harmonic Distortion
+ Noise
Gain
Gain Match
Power Supply
Rejection Ratio
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TSZ22111・15・001
POUT
THD+N
6/27
SHDNLB=SHDNRB=L to H
RL=32Ω, THD+N≤-40dB, f=1kHz,
20kHz LPF, for Single Channel
RL=16Ω, THD+N≤-40dB, f=1kHz,
20kHz LPF, for Single Channel
RL=32Ω, POUT=10mW, f=1 kHz,
20kHz LPF
RL=16Ω, POUT=10mW, f= kHz,
20kHz LPF
Gain Is variable by the external resistor
of Ri and Rf.
µVrms 20kHz LPF + JIS-A
RL=32Ω, f=1kHz, VOUT=200mVP-P,
1kHz BPF
f=217Hz, 100mVP-P‐ripple,
217Hz BPF
TSZ02201-0C1C0EA00160-1-2
07.Aug.2014 Rev.002
Datasheet
BD88400FJ
Typical Performance Curves
General Items
Unless otherwise specified, Ta=25°C, SGND=PGND=0V, SHDNLB=SHDNRB=SVDD, CF=CH=2.2µF,
Input coupling capacitor=1µF, RL=No Load
(Note) In BD88400FJ the input resistor (Ri)=10kΩ, feedback resistor(Rf)=10kΩ.
4.0
1u
SHDNLB=VDD
SHDNLB=VDD
SHDNRB=0V
SHDNRB=0V
Operating Current [mA]
Standby Current [A]
SHDNLB=0V
SHDNLB=0V
SHDNRB=0V
SHDNRB=0V
100n
10n
1n
0.1n
0.0
UVLO.
2.0
1.0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
6.0
1.0
2.0
3.0
4.0
5.0
6.0
Supply Voltage [V]
Supply Voltage [V]
Figure 1. Standby Current vs Supply Voltage
Figure 2. Monaural Operating Current vs Supply Voltage
0
4.0
SHDNLB=VDD
SHDNLB=VDD
SHDNRB=VDD
SHDNRB=VDD
This
* (Note)
This caracteristics
has
characteristics
hysteresis
(40mV has
typ) by
hysteresis
(40mV
typ)
UVLO.
3.0
SHDNLB=VDD
SHDNLB=VDD
SHDNRB=VDD
SHDNRB=VDD
No Load
No
Load
-0.5
VSS Voltage [V]
Operating Current [mA]
(Note)
This
* This
caracteristics
has
characteristics
has by
hysteresis
(40mV typ)
hysteresis (40mV typ) by
UVLO.
3.0
by UVLO.
2.0
-1
-1.5
-2
1.0
-2.5
-3
0.0
0.0
1.0
2.0
3.0
4.0
5.0
2.0
6.0
3.0 3.5
4.0
4.5
5.0 5.5
6.0
Supply Voltage [V]
Supply Voltage [V]
Figure 4. Negative Voltage vs Supply Voltage
Figure 3. Stereo Operating Current vs Supply Voltage
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2.5
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Datasheet
BD88400FJ
Typical Performance Curves – continued
General Items
100
200
SHDNLB=SHDNRB
SHDNLB=SHDNRB
=L->H
=L->H
VSS 90% Setup time
VSS
90% Setup time
No Load
No Load
Setup
SetupTime
time[µs]
[us]
160
140
RL=16Ω,
RL=16in
in phase
Ω,phase
90 RRL=16
out of
of phase
phase
L=16Ω,
Ω,out
Maximum Output Power [mW]
180
120
100
80
60
40
80
70
60
50
phase
RRL=32
Ω,ininphase
L=32Ω,
40
outof
ofphase
phase
RRL=32
Ω,out
L=32Ω,
30
THD+N
-40dB
THD+N ≦
≤-40dB
20kHz LPF
20kHz
LPF
Stereo
Stereo
20
10
20
0
0
2.0
2.5
3.0 3.5
4.0
4.5
5.0 5.5
2.0
6.0
Supply Voltage [V]
3.0 3.5
4.0
4.5
5.0 5.5
6.0
Supply Voltage [V]
Figure 5. Setup Time vs Supply Voltage
Figure 6. Maximum Output Power vs Supply Voltage
0
0
VDD=2.4V
VDD=2.4V
Ripple=100mVp-p
Ripple
= 100mVp-p
BPF
BPF
-10
-20
VDD=3.3V
VDD=3.3V
Ripple=100mVp-p
Ripple
= 100mVp-p
BPF
BPF
-10
-20
-30
PSRR [dB]
-30
PSRR [dB]
2.5
-40
-50
-60
-40
-50
-60
-70
-70
-80
-80
-90
-90
-100
-100
10
100
1k
10k
100k
10
Frequency [Hz]
1k
10k
100k
Frequency [Hz]
Figure 7. PSRR vs Frequency
(VDD=2.4V)
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TSZ22111・15・001
100
Figure 8. PSRR vs Frequency
(VDD=3.3V)
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Datasheet
BD88400FJ
Typical Performance Curves – continued
General Items
0
0
VDD=5.5V
VDD=5.5V
Ripple
= 100mVp-p
Ripple=100mVp-p
BPF
BPF
-10
-20
-20
-30
-30
Cross Talk [dB]
PSRR [dB]
VDD=2.4V
VDD=2.4V
VOUT=200mVp-p
VOUT
= 200mVp-p
R
L=32Ω
RL=32Ω
BPF
BPF
-10
-40
-50
-60
-70
-40
LtoR
RtoL
-50
-60
-70
-80
-80
-90
-90
-100
-100
10
100
1k
10k
100k
10
100
Frequency [Hz]
10k
100k
Frequency [Hz]
Figure 10. Crosstalk vs Frequency
(VDD=2.4V)
Figure 9. PSRR vs Frequency
(VDD=5.5V)
0
0
VDD=3.3V
VDD=3.3V
VOUT=200mVp-p
VOUT
= 200mVp-p
RL=32Ω
RL=32
BPF Ω
BPF
-20
-30
VDD=5.5V
VDD=3.3V
VOUT=200mVp-p
VOUT
= 200mVp-p
RL=32Ω
RL=32
BPF Ω
BPF
-10
-20
-30
Cross Talk [dB]
-10
Cross Talk [dB]
1k
-40
LtoR
RtoL
-50
-60
-40
-60
-70
-70
-80
-80
-90
-90
-100
LtoR
RtoL
-50
-100
10
100
1k
10k
100k
10
Frequency [Hz]
1k
10k
100k
Frequency [Hz]
Figure 12.Crosstalk vs Frequency
(VDD=5.5V)
Figure 11. Crosstalk vs Frequency
(VDD=3.3V)
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Datasheet
BD88400FJ
Typical Performance Curves – continued
BD88400FJ
10
VDD=3.3V
VDD=3.3V
f=1kHz
f=1kHz
20kHz-LPF
BPF
BPF
-20
RL=32
RL=32ΩΩ
VDD=3.3V,
Po=10mW
VDD=3.3V, Po=10mW
Input
coupling
RI=10kΩ,
Ri=10k
,
Input
coupling
Ω
capacitor=1.0µF
capacitor = 1.0uF
8
6
4
-40
Gain [dB]
Output Voltage [dBV]
0
RL=16
Ω
RL=16Ω
-60
-80
RL=16ΩΩ
RL=16
2
0
-2
RL=32
RL=32ΩΩ
-4
-6
-100
-8
-120
-120
-10
-100
-80
-60
-40
-20
0
10
100
Input Voltage [dBV]
10
10
THD+N [%]
THD+N [%]
100
In phase
VDD=3.3V
VDD=3.3V
20kHz-LPF
20kHz-LPF
f=1kHz
f=1kHz
Stereo
Stereo
RL=16Ω
RL=16Ω
0.01
100n
In phase
1
0.1
VDD=3.3V
VDD=3.3V
20kHz-LPF
20kHz-LPF
f=1kHz
f=1kHz
Stereo
RL=32Ω
Stereo
RL=32Ω
0.01
Out of phase
Out of phase
0.001
0.001
1n
100k
Figure 14. Gain vs Frequency
(VDD=3.3V)
100
0.1
10k
Frequency [Hz]
Figure 13. Output Voltage vs Input Voltage
(VDD=3.3V)
1
1k
10u
1m
1n
100m
100n
10u
1m
Output Power [W]
Output Power [W]
Figure 15. THD+N vs Output Power
(VDD=3.3V, RL=16Ω)
Figure 16. THD+N vs Output Power
(VDD=3.3V, RL=32Ω)
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TSZ02201-0C1C0EA00160-1-2
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Datasheet
BD88400FJ
Typical Performance Curves – continued
BD88400FJ
100
100
VDD=3.3V
VDD=3.3V
RL=16Ω
RL=16Ω
20kHz-LPF
20kHz-LPF
Stereo (in phase)
Stereo (in phase)
10
THD+N [%]
THD+N [%]
10
1
Po=0.1mW
Po=1mW
0.1
VDD=3.3V
VDD=3.3V
R
L=32Ω
RL=32Ω
20kHz-LPF
20kHz-LPF
Stereo (in phase)
Stereo (in phase)
0.01
1
Po=0.1mW
Po=1mW
0.1
0.01
Po=10mW
Po=10mW
0.001
0.001
10
100
1k
10k
100k
10
Frequency [Hz]
100
1k
10k
100k
Frequency [Hz]
Figure 18. THD+N vs Frequency
(VDD=3.3V, RL=32Ω)
Figure 17. THD+N vs Frequency
(VDD=3.3V, RL=16Ω)
0
VDD=3.3V
VDD=3.3V
Input
connect
Input connect
to the ground
towith
the1.0µF
ground
with 1.0uF
Spectrum [dBV]
-20
-40
-60
-80
-100
-120
-140
10
100
1k
10k
100k
Frequency [Hz]
Figure 19. Noise Spectrum vs Frequency
(VDD=3.3V)
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Datasheet
BD88400FJ
Timing Chart
(Usually Operation)
PVDD,SVDD
SHDNLB
SHDNRB
Amp enable
PVSS,SVSS
INL,INR
OUTL
OUTR
Shutdow n
Setup
Signal output
Shutdow n
Figure 20. Usually Operation
(UVLO Operation)
PVDD,SVDD
SHDNLB,
SHDNRB
PVSS,SVSS
OUTL
OUTR
Signal output
UVLO
Setup
Signal output
Figure 21. UVLO Operation
(TSD Operation)
Hy steresis = 5℃
Ta
PVDD,SVDD
SHDNLB,
SHDNRB
PVSS,SVSS
OUTL
OUTR
Signal output
TSD
Signal output
Figure 22. TSD Operation
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Datasheet
BD88400FJ
Application Information
1.
Functional Descriptions
Figure 23 shows the conventional headphone amplifier circuit. In this circuit, the signal is outputted using the middle
point bias circuit based on the middle point bias. Therefore, the output coupling capacitor that removes the DC voltage
difference and does the AC coupling is necessary. This coupling capacitor and the impedance of the headphone
compose the high-pass filter. Therefore, the signal degradation in the low frequency region is experienced. The output
coupling capacitor should be of large capacitance because the cutoff frequency of this high-pass filter follows formula
(1).
fc =
1
2πRLCC
(1)
(Note) Cc is the coupling capacitor, and RL is the impedance of the headphone.
Moreover, POP noise by the middle point bias start-up is generated and the degradation of PSRR is experienced.
VDD
Cc
+
Vhp
VHP
VDD
Vout
V
[V]
OUT [V]
+
OUT
Vout
Input
VDD/2
0
time [s]
V
HP [V]
Vhp
[V]
GND
Middle Point
BiasCircuit
0
time [s]
Figure 23. Conventional Headphone Amplifier Circuit
Figure 24 shows the BD88400FJ series circuit. In this circuit, the signal is outputted using a negative voltage based on
the ground level. Therefore, the amplifier output can be connected directly to the headphone, making the output
coupling capacitor unnecessary. In addition, the signal degradation in the low frequency region with the coupling
capacitor is not generated, thus a deep bass is achieved.
Moreover, POP noise is not controlled by the middle point bias start-up. Thus, the degradation of PSRR doesn't occur
since it is based on the ground.
OUT
Vout
Input
+
CF : Flying
Capacitor
VDD
VVout
OUT [V]
HPVDD
VHP
Vhp
HPVDD
0
time [s]
Charge
Pump
V
HP [V]
Vhp
[V]
VSS
CH : Hold
Capacitor
0
time [s]
Figure 24.BD88400FJ Series Circuit
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Datasheet
BD88400FJ
(1) CHARGE PUMP / CHARGE PUMP CONTROL
The negative power supply circuit is composed of the regulated charge-pump. This circuit outputs the regulated
negative voltage (PVSS) directly from power-supply voltage (PVDD). Therefore, it doesn't depend on the power-supply
voltage and a constant voltage is outputted (PVSS=-2.4V@Typ, refer to Figure 4). Moreover, there is no power supply
swinging caused by the output current of the headphone amplifier. Also, it doesn't influence the headphone amplifier
characteristic.
VSS
vsSupply
LoadVoltage
Current
VSSVoltage
Voltage vs.
[Ta=25℃,
VDD=3.3V,
[Ta=25°C,
VDD
=3.3V, CF=CH=2.2uF]
CF=CH=2.2µF]
0
VSS Voltage
[V][V]
VSS
Voltage
-0.5
-1
-1.5
-2
-2.5
-3
0
20
40
60
80
100
120
Load Current
Current [mA]
Load
[mA]
Figure 25. PVSS Load Current Regulation Characteristics (Reference Data)
(a) Power Control
The power control is a logical sum of SHDNLB and SHDNRB. The negative power supply circuit starts when H level
is inputted to either SHDNLB or SHDNRB, and power down when SHDNLB=SHDNRB=L level.
SHDNLB
Table.2 Charge Pump Control
SHDNRB
Control
L
L
Power down
L
H
Power ON
H
L
Power ON
H
H
Power ON
Change
Pump
Frequency
Charge
PumpOscillator
Ocsillator Frequency
[kHz][kHz]
Change
Pump
Frequency
[kHz]
Charge
PumpOscillator
Ocsillator Frequency
[kHz]
(b) Operating Frequency
The operating frequency of the negative power supply charge pump is designed to minimize temperature and
voltage dependency. Figure 26 shows the reference data (measurements). Please note the frequency interference
in the application board.
400
380
360
VVDD=3.3V
DD=3.3V
Measure:
Measure C1P
: C1P
CF=CH=2.2µF
CF=CH=2.2uF
340
320
300
280
260
240
220
200
-50.0
0.0
50.0
100.0
Temperature
: Ta [°C]
Ta [℃]
400
380
360
Ta=25°C
Ta=25℃
Measure:
Measure :C1P
C1P
CF=CH=2.2µF
CF=CH=2.2uF
340
320
300
280
260
240
220
200
2.0
3.0
4.0
5.0
6.0
Supply
Voltage
[V]
Supply
Voltage[V]
Figure 26. Temperature Characteristic and Voltage Characteristic of Operating Frequency (Reference Data)
(c) The Flying Capacitor and the Hold Capacitor
The flying capacitor (CF) and the hold capacitor (CH) greatly influence the characteristic of the charge pump.
Therefore, please connect 2.2µF capacitor with an excellent temperature characteristic and voltage characteristic
as near as possible to the IC.
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Datasheet
BD88400FJ
(2) HEADPHONE AMP
The headphone amplifier is driven by the internal positive voltage (+2.4V) and negative voltage (SVSS, -2.4V) based
on ground (SGND). Therefore, the headphone can be connected without the output coupling capacitor. As a result, it
brings improvement to low-frequency characteristic compared with the conventional coupling capacitor headphone
type.
(a) Power Control
L channel and R channel of the headphone amplifier can be independently controlled by SHDNLB and SHDNRB
logic. When the SVSS voltage is -1.1V@Typ or more, the headphone amplifier does not operate to protect from
illegal operation. In addition, the over-current protection circuit is built in. The amplifier shutdowns when the
over-current occurs because of the output short-circuit etc., thus IC is protected from being destroyed.
Table.3 Control of the headphone amplifier
SHDNRB
L Channel
SHDNLB
R Channel
L
L
Power down
Power down
L
H
Power down
Power ON
H
L
Power ON
Power down
H
H
Power ON
Power ON
[V]
SHDNxB
VDD
0
[time]
[V]
0
[time]
-1.1V
SVSS
Amprilier
Disable
Amplifier
Enable
Figure 27. Area of Headphone Amplifier can Operate
SVSS does not have internal connection with PVSS. Please connect SVSS with PVSS on the application board.
(b) Input Coupling Capacitor
Input DC level of BD88400FJ is 0V (SGND). The input coupling capacitor is necessary for the connection with the
signal source device. The signal degradation happens in the low frequency because of the high-pass filter
composed by this input coupling capacitor and the input impedance of BD88400FJ.
The input impedance of BD88400FJ is external resistance Ri. The cutoff frequency of this high-pass filter follows
formula (2).
fc =
1
2πR INCIN
(2)
Where:
CIN is the input coupling capacitor. RIN=Ri
9.0
Rin=14kΩ
R
IN=14kΩ
6.0
3.0
CCin=10uF
IN=10µF
Gain
Gain[dB]
[dB]
0.0
-3.0
-6.0
Cin=4.7uF
C
IN=4.7µF
-9.0
-12.0
C
Cin=2.2uF
IN=2.2µF
-15.0
CCin=1uF
IN=1µF
-18.0
-21.0
1
10
100
Frequency[Hz]
[Hz]
Frequency
Figure 28. Input Coupling Capacitor Frequency Response (Reference Data)
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Datasheet
BD88400FJ
The degradation of THD+N happens because of the input coupling capacitor. Therefore, please consider these when
selecting components.
0
-10
-20
Cin=1.0uF
CIN=1.0µF
THD+N [dB]
THD+N
[dB]
-30
-40
Cin=0.47uF
CIN=0.47µ
-50
-60
BD88415GUL
BD88415GUL
VVDD=3.3V
DD=3.3V
Po=10mW
Po=10mW
RRL=16Ω
L=16Ω
20kHz
LPF
20kHz LPF
CIN=0.22µ
Cin=0.22uF
-70
-80
-90
CIN=2.2µF
Cin=2.2uF
-100
10
100
1k
10k
100k
Frequency
[Hz]
Frequency [Hz]
(Note) Capacitor size: 1608
Figure 29. THD+N by the Input Coupling Capacitor (Reference Data)
Audio
Source
VS
Vs
IN
Vin
RIN=7.1kΩ
Rin
=7.1kΩ
Cin
C
IN
[V]
VVs
S [V]
(c) Terminal State during Power Down
The power control of the headphone amplifier changes the state of the terminal. When in shutdown, the input
impedance of the input terminal becomes 7.1kΩ@Typ (In BD88400FJ, become RI + 7.1kΩ). The time constant can
be reduced when the input coupling capacitor is charged.
The input voltage changes while charging up the input coupling capacitor. Therefore, do not operate the
headphone amplifier while charging.
Vout
OUT
VDD
Output
Bias
0
time [s]
[V]
VVin
IN [V]
+
Output
Bias
VSS
0
time [s]
Figure 30. Input voltage transition with input coupling capacitor
Charge time constant follows formula (3) by using the input coupling capacitor and the input impedance. The
calculation of the convergence value to wait time is indicated in Figure 31.
(3)
τ = RINCIN
Convergence
[%][%]
Convergence
(Note) RIN=7.1kΩ@Typ In BD88400FJ, RIN=Ri+7.1kΩ
100
90
80
70
60
50
40
30
20
10
0
0τ
1τ
2τ
3τ
4τ
5τ
Wait Time
time [s][s]
Wait
6τ
7τ
8τ
Figure 31. Convergence vs Wait Time (Reference)
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Datasheet
BD88400FJ
(3) UVLO / SHUTDOWN CONTROL
BD88400FJ has low voltage protection function (UVLO: Under Voltage Lock Out). This protects the IC from the illegal
operation during a low power supply voltage.
The detection voltage is 2.13V@Typ, so it does not influence recommended operation voltage of 2.4V. UVLO controls the
whole IC, and also both the negative power supply charge pump and the headphone amplifier during power down.
(4) TSD
BD88400FJ has overheating protection function (TSD: Thermal Shutdown). The headphone amplifier shutdowns when
overheating occurs due to headphone amplifier illegal operation. (The detection temp. 145°C@Typ)
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Datasheet
BD88400FJ
2.
Evaluation Board
BD88400FJ evaluation Board loads and operates with the necessary parts only. It uses RCA Connector for input
terminal and Headphone jack (φ=3.5mm) for output terminal. Therefore it can easily connect between Audio equipment.
Also, it can operate using a single supply (2.4V to 5.5V). The switch on the board (SDB) can control shutdown.
(Spec.)
Item
Limit
Unit
2.4 to 5.5
V
1.0
A
Operating Temperature Range
-40 to +85
°C
Input Voltage Range
-2.5 to +2.5
V
Output Voltage Range
-2.5 to +2.5
V
15
Ω
Supply Voltage Range (VDD)
Maximum Supply Current
Minimum Load Impedance
(Schematic)
Figure 32. Evaluation Board Schematic (BD88400FJ)
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Datasheet
BD88400FJ
(Parts List)
Parts Name
Type
Value
Size
U1
SOP-J14pin
BD88400FJ
8.65mm x 6.00mm
C3, C5
Chip Ceramic capacitor
2.2µF
1608
C1,C2,C4,C6
Chip Ceramic capacitor
1.0µF
1608
C7
Tantalum capacitor
10µF
3216
R2,R3,R5,R6
Chip Resistor
10kΩ
1608
R7, R8
Chip Resistor
Open
-
CN3
Headphone jack
-
φ=3.5mm
(Operation procedure)
①
②
③
④
⑤
⑥
Turn OFF the switch (SHNDLB/SHDNRB) on evaluation board.
Connect the positive terminal of the power supply to the VDD pin and ground terminal to the GND pin.
Connect the left output of the audio source to the INL and connect the right output to the INR.
Turn ON the power supply.
Turn ON the switch (SHDNLB/SHDNRB) on the evaluation board. (H)
Input the audio source.
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Datasheet
BD88400FJ
(Board Layout)
(TOP LAYER - TOP VIEW)
(BOTTOM LAYER – TOP VIEW)
Figure 33. ROHM Application Board Layout (BD88400FJ)
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Datasheet
BD88400FJ
Power Dissipation
Figure 34 shows the reference value of the thermal derating curve.
(Conditions)
This value is for mounted on the ROHM standard board
Board size: 70mm x 70mm x 1.6mm (FR4, 1-Layer PCB)
Power Dissipation
Pd [W]: Pd [W]
1.2
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
Temperature : Ta [°C]
Ta [℃]
Figure 34. Thermal Derating Curve
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Datasheet
BD88400FJ
I/O Equivalent Circuits
PGND PGND
PVDD PVDD
SVDD
-
PAD
PAD
PAD
+
A
B
PGND PGND
PIN6
C
PVSS PVSS
PIN8
SVDD
SVSS
PIN2,14
SVDD
PGND PGND
PAD
PAD
PAD
+
D
SVSS
PIN11,13
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Datasheet
BD88400FJ
Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Except for pins the output of which were designed to go below ground, ensure that no pins are at a voltage below that of
the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on
the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when the
IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum rating,
increase the board size and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing
of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned OFF completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
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Datasheet
BD88400FJ
Operational Notes – continued
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Figure 35. Example of Monolithic IC Structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).
15. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be
within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below the
TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
16. Over-Current Protection Circuit (OCP)
This IC has a built-in overcurrent protection circuit that activates when the output is accidentally shorted. However, it is
strongly advised not to subject the IC to prolonged shorting of the output.
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Datasheet
BD88400FJ
Ordering Information
B
D
8
8
4
Part Number
0
0
F
J
-
Package
FJ: SOP-J14
GE 2
Packaging and forming specification
GE2: Embossed tape and reel
Marking Diagram
SOP-J14 (TOP VIEW)
Part Number Marking
BD88400FJ
LOT Number
1PIN MARK
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Datasheet
BD88400FJ
Physical Dimension, Tape and Reel Information
Package Name
SOP-J14
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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Datasheet
BD88400FJ
Revision History
Date
Revision
26.May.2014
001
07.Aug.2014
002
Changes
New Release.
p.6 Electrical Characteristics
Limit : Offset Voltage Max ±5.0mV -> ±6.0mV
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Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice – GE
© 2013 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice – GE
© 2013 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001
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