DMPH6050SSD 175°C 60V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features 48m @ VGS = -10V ID TA = +25°C -5.2A 60m @ VGS = -4.5V -4.7A RDS(ON) Max -60V NEW PRODUCT Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Rated to +175°C – ideal for high ambient temperature environments 100% Unclamped Inductive Switching – ensures more reliable and robust end application Low RDS(ON) – minimises power losses Low Qg – minimises switching losses Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMPH6050SSDQ) Applications Mechanical Data Engine Management Systems Body Control Electronics DC-DC Converters Case: SO-8 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 e3 Weight: 0.076 grams (Approximate) SO-8 D1 SO-8 Pin1 S1 D1 G1 D1 S2 D2 G2 D2 G2 S1 Top View Pin Configuration Top View G1 D2 S2 Equivalent Circuit Ordering Information (Note 4) Part Number DMPH6050SSD-13 Notes: Case SO-8 Packaging 2500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking H6050SD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 16 = 2016) WW = Week (01 to 53) H6050SD YY WW 1 DMPH6050SSD Document number: DS38681 Rev.1 - 2 4 1 of 7 www.diodes.com September 2016 © Diodes Incorporated DMPH6050SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +100°C Steady State Continuous Drain Current (Note 6) VGS = -10V ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH NEW PRODUCT Value -60 ±20 -5.2 -3.7 -35 -2.0 -25 33 IDM IS IAS EAS Unit V V A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) TA = +25°C Steady state t<10s TA = +25°C Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Value PD 1.5 103 64 2.0 75 47 13 RJA PD RθJA Thermal Resistance, Junction to Case (Note 6) RθJC TJ, TSTG Operating and Storage Temperature Range Electrical Characteristics Symbol Unit W °C/W W °C/W -55 to +175 °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250μA VDS = -60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) -1.0 RDS(ON) — mΩ VSD — -3.0 48 60 -1.2 V Static Drain-Source On-Resistance — 34 44 -0.7 VDS = VGS, ID = -250μA VGS = -10V, ID = -5A VGS = -4.5V, ID = -4A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR — — — — — — — — — — — — — 1525 90 70 16 14.5 30.6 4.9 5.2 5.3 15.4 79.2 45.3 15.2 — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns QRR — 9.3 — nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: V Test Condition VDS = -30V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -30V, ID = -5A VGS = -10V, VDS = -30V, RG = 3Ω, ID = -5A IF = -5A, di/dt = -100A/μs IF = -5A, di/dt = -100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMPH6050SSD Document number: DS38681 Rev.1 - 2 2 of 7 www.diodes.com September 2016 © Diodes Incorporated DMPH6050SSD 30 30.0 VGS = -10.0V VGS = -5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 20.0 VGS = -4.5V VGS = -3.5V 15.0 10.0 VGS = -3.0V 5.0 20 15 10 TJ= 175℃ TJ= 85℃ TJ= 150℃ 5 TJ= 25℃ TJ= 125℃ VGS = -2.8V 0.0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 1 5 VGS = -4.5V 0.050 0.040 VGS = -10V 0.030 3.5 4 4.5 5 0.16 0.14 0.12 TJ= 175℃ TJ= 150℃ TJ= 125℃ TJ= 85℃ TJ= 25℃ 0.03 TJ= -55℃ 0.02 ID = -7A 0.1 ID = -5A 0.08 0.06 0.04 0.02 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.08 0.04 3 0.18 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.05 2.5 0.2 0 0.06 2 Figure 2. Typical Transfer Characteristic 0.060 0.07 1.5 VGS, GATE-SOURCE VOLTAGE (V) 0.070 VGS= -10V TJ= -55℃ 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT VDS= -5.0V VGS = -4.0V 25.0 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2.2 2 1.8 VGS = -10V, ID = -7.0A 1.6 1.4 1.2 VGS = -4.5V, ID = -7.0A 1 0.8 0.6 0.4 0.01 0 5 10 15 20 25 30 ID, DRAIN CURRENT(A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMPH6050SSD Document number: DS38681 Rev.1 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature September 2016 © Diodes Incorporated 2.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.1 0.09 0.08 VGS = -4.5V, ID = -7.0A 0.07 0.06 0.05 0.04 VGS = -10V, ID = -7.0A 0.03 0.02 2.2 2 -50 -25 1.6 ID = -250μA 1.4 1.2 1 0 25 50 75 -50 100 125 150 175 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs Temperature 10000 30 f =1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 IS, SOURCE CURRENT (A) ID = -1mA 1.8 0.8 0.01 20 15 TJ = 175oC 10 TJ = 85oC TJ = 150oC 5 TJ = 25oC TJ = 125oC Ciss 1000 TJ = -55oC 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Coss 100 Crss 10 0 0 1.5 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 40 100 10 RDS(ON) Limited PW =100μs 6 ID, DRAIN CURRENT (A) 8 VGS (V) NEW PRODUCT DMPH6050SSD VDS = -30V, ID = -5A 4 10 PW =10ms 0.1 2 0.01 0 PW =1ms 1 TJ(Max)=175℃ PW =100ms TC=25℃ Single Pulse PW =1s DUT on 1*MRP PW =10s board DC VGS= -10V 0.1 0 4 8 12 16 20 24 Qg (nC) Figure 11. Gate Charge DMPH6050SSD Document number: DS38681 Rev.1 - 2 28 32 4 of 7 www.diodes.com 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 September 2016 © Diodes Incorporated DMPH6050SSD r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D=0.5 D=0.9 D=0.3 0.1 D=0.7 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA= 102℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMPH6050SSD Document number: DS38681 Rev.1 - 2 5 of 7 www.diodes.com September 2016 © Diodes Incorporated DMPH6050SSD Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 NEW PRODUCT E 1 b E1 h ) ides All s 9° ( A R 1 0. e Q 45° 7° c 4° ± 3° A1 E0 L Gauge Plane Seating Plane SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h -0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C DMPH6050SSD Document number: DS38681 Rev.1 - 2 X 6 of 7 www.diodes.com September 2016 © Diodes Incorporated DMPH6050SSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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