ISC MJE3055AT Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJE3055AT
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO = 80V(Min)
·High DC Current Gain: hFE= 150-260@IC= 1A
·Bandwidth Product: fT = 2MHz(Min)@IC = 500 mA
APPLICATIONS
·Designed for use in general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
6
A
PC
Collector Power Dissipation
@ TC=25℃
75
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.67
℃/W
isc Website:www.iscsemi.com
1
isc & iscsemi is registered trademark
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJE3055AT
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 25mA; IB= 0
80
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 5uA; IB= 0
100
V
V(BR)EBO
Emitter -Base Breakdown Voltage
IE= 50uA; IB= 0
6
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
1.1
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 3.3A
8.0
V
VBE(on)
Base-Emitter On Voltage
IC= 4A ; VCE= 4V
1.8
V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
0.7
mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
10
uA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
10
uA
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
150
260
hFE-2
DC Current Gain
IC= 4A ; VCE= 4V
20
100
hFE-3
DC Current Gain
IC= 10A ; VCE= 4V
5
Second Breakdown Collector Current
with Base Forward Biased
VCE= 37V,t= 0.5s,Nonrepetitive
2.0
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 10V; f= 500kHz
2.0
Is/b
fT
isc Website:www.iscsemi.com
CONDITIONS
2
MIN
TYP.
MAX
UNIT
A
MHz
isc & iscsemi is registered trademark
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