Vishay BZD17C130P Excellent stability Datasheet

BZD17C3V6P to BZD17C200P
Vishay Semiconductors
Zener Diodes
Features
•
•
•
•
•
Sillicon planar zener diodes
Low profile surface-mount package
Low leakage current
Excellent stability
High temperature soldering: 260 °C/10 s
at terminals
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
17249
Mechanical Data
Case: JEDEC DO219AB
Weight: approx. 15 mg
(SMF®)
plastic case
Packaging codes/options:
GS18/10K per 13" reel, (8 mm tape), 50K/box
GS08/3K per 7" reel, (8 mm tape), 30K/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Power dissipation
Non-repetitive peak pulse power
dissipation
Test condition
Symbol
Value
Unit
TL = 80 °C
Ptot
2.3
W
TA = 25 °C
Ptot
0.8 1)
W
100 µs square pulse 2)
PZSM
300
W
Symbol
Value
Unit
RthJA
180
K/W
RthJL
30
K/W
Tj
150
°C
Tstg
- 55 to + 150
°C
Notes:
1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
2) T = 25 °C prior to surge
j
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
1)
Thermal resistance junction to lead
Maximum junction temperature
Storage temperature range
Notes:
1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Document Number 81821
Rev. 1.0, 09-Jun-09
Test condition
Symbol
IF = 0.2 A
VF
Min.
Typ.
For technical support, please contact: [email protected]
Max.
Unit
1.2
V
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BZD17C3V6P to BZD17C200P
Vishay Semiconductors
Electrical Characteristics
TJ = 25 °C, unless otherwise specified
Part number
Working voltage 1)
Differential
resistance
Temperature
coefficient
VZ at IZT
rdif at IZ
αZ at IZ
IZT
IR
VR
V
Ω
%/°C
mA
µA
V
Marking code
min.
max.
typ.
max.
min.
max.
Test
current
Reverse leakage
current
max.
BZD17C3V6P
I0
3.4
3.8
4
8
- 0.14
- 0.04
100
100
BZD17C3V9P
I1
3.7
4.1
4
8
- 0.14
- 0.04
100
50
1
1
BZD17C4V3P
I2
4
4.6
4
7
- 0.12
- 0.02
100
25
1
BZD17C4V7P
I3
4.4
5
3
7
- 0.1
0
100
10
1
BZD17C5V1P
I4
4.8
5.4
3
6
- 0.08
0.02
100
5
1
BZD17C5V6P
I5
5.2
6
2
4
- 0.04
0.04
100
10
2
BZD17C6V2P
I6
5.8
6.6
2
3
- 0.01
0.06
100
5
2
BZD17C6V8P
I7
6.4
7.2
1
3
0
0.07
100
10
3
BZD17C7V5P
I8
7
7.9
1
2
0
0.07
100
50
3
BZD17C8V2P
I9
7.7
8.7
1
2
0.03
0.08
100
10
3
BZD17C9V1P
J0
8.5
9.6
2
4
0.03
0.08
50
10
5
BZD17C10P
J1
9.4
10.6
2
4
0.05
0.09
50
7
7.5
BZD17C11P
J2
10.4
11.6
4
7
0.05
0.1
50
4
8.2
BZD17C12P
J3
11.4
12.7
4
7
0.05
0.1
50
3
9.1
BZD17C13P
J4
12.4
14.1
5
10
0.05
0.1
50
2
10
BZD17C15P
J5
13.8
15.6
5
10
0.05
0.1
50
1
11
BZD17C16P
J6
15.3
17.1
6
15
0.06
0.11
25
1
12
BZD17C18P
J7
16.8
19.1
6
15
0.06
0.11
25
1
13
BZD17C20P
J8
18.8
21.2
6
15
0.06
0.11
25
1
15
BZD17C22P
J9
20.8
23.3
6
15
0.06
0.11
25
1
16
BZD17C24P
K0
22.8
25.6
7
15
0.06
0.11
25
1
18
BZD17C27P
K1
25.1
28.9
7
15
0.06
0.11
25
1
20
BZD17C30P
K2
28
32
8
15
0.06
0.11
25
1
22
BZD17C33P
K3
31
35
8
15
0.06
0.11
25
1
24
BZD17C36P
K4
34
38
21
40
0.06
0.11
10
1
27
BZD17C39P
K5
37
41
21
40
0.06
0.11
10
1
30
BZD17C43P
K6
40
46
24
45
0.07
0.12
10
1
33
BZD17C47P
K7
44
50
24
45
0.07
0.12
10
1
36
BZD17C51P
K8
48
54
25
60
0.07
0.12
10
1
39
BZD17C56P
K9
52
60
25
60
0.07
0.12
10
1
43
BZD17C62P
L0
58
66
25
80
0.08
0.13
10
1
47
BZD17C68P
L1
64
72
25
80
0.08
0.13
10
1
51
BZD17C75P
L2
70
79
30
100
0.08
0.13
10
1
56
BZD17C82P
L3
77
87
30
100
0.08
0.13
10
1
62
BZD17C91P
L4
85
96
60
200
0.08
0.13
5
1
68
BZD17C100P
L5
94
106
60
200
0.09
0.13
5
1
75
BZD17C110P
L6
104
116
80
250
0.09
0.13
5
1
82
BZD17C120P
L7
114
127
80
250
0.09
0.13
5
1
91
BZD17C130P
L8
124
141
110
300
0.09
0.13
5
1
100
BZD17C150P
L9
138
156
130
300
0.09
0.13
5
1
110
BZD17C160P
M0
153
171
150
350
0.09
0.13
5
1
120
BZD17C180P
M1
168
191
180
400
0.09
0.13
5
1
130
BZD17C200P
M2
188
212
200
500
0.09
0.13
5
1
150
Note:
1) Pulse test: t ≤ 5 ms
p
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For technical support, please contact: [email protected]
Document Number 81821
Rev. 1.0, 09-Jun-09
BZD17C3V6P to BZD17C200P
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
IF - Forward Current (A)
10
Max. VF
Typ. VF
1
0.1
0.6
0.8
17411
1.0
1.2
1.4
1.6
VF - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
CD - Typ. Junction Capacitance (pF)
10 000
C5V1P
C6V8P
C18P
C12P
1000
100
C27P
C51P
C200P
10
0
0.5
17412
1.0
1.5
2.0
2.5
3.0
VR - Reverse Voltage (V)
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
Ptot - Power Dissipation (W)
3.0
Tie point temperature
2.5
2.0
1.5
1.0
Ambient temperature
0.5
0
0
17413
25
50
75
100
125
150
Tamb - Ambient Temperature (°C)
Figure 3. Power Dissipation vs. Ambient Temperature
Document Number 81821
Rev. 1.0, 09-Jun-09
For technical support, please contact: [email protected]
www.vishay.com
3
BZD17C3V6P to BZD17C200P
Vishay Semiconductors
Package Dimensions in millimeters (inches): DO219AB
0.85 (0.033)
0 (0.000)
0.1 (0.004)
5
5
0.05 (0.002)
Detail Z
enlarged
1.2 (0.047)
0.8 (0.031)
0.25 (0.010)
1.9 (0.075)
1.7 (0.067)
0.35 (0.014)
1.08 (0.043)
2.9 (0.114)
0.88 (0.035)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051)
1.4 (0.055)
1.3 (0.051)
2.9 (0.114)
17247
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4
For technical support, please contact: [email protected]
Document Number 81821
Rev. 1.0, 09-Jun-09
BZD17C3V6P to BZD17C200P
Vishay Semiconductors
Blistertape for SMF Dimensions in millimeters
PS
18513
Document Number 81821
Rev. 1.0, 09-Jun-09
For technical support, please contact: [email protected]
www.vishay.com
5
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