IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE(on) typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters • UPS G G D-Pak IRGR4610DPbF D2-Pak IRGS4610DPbF G C E TO-220AB IRGB4610DPbF G C E G ate C ollector Em itter → Features Low VCE(ON) and switching losses Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant Base part number E E D-PAK IRGS4610DPbF D PAK IRGB4610DPbF TO-220AB Enables short circuit protection scheme Environmentally friendly Standard Pack Form Tube Tape and Reel Tape and Reel Right Tape and Reel Left Tube Tape and Reel Right Tape and Reel Left Tube Package Type IRGR4610DPbF Excellent current sharing in parallel operation 2 Orderable Part Number Quantity 75 2000 3000 3000 50 800 800 50 IRGR4610DPbF IRGR4610DTRPbF IRGR4610DTRRPbF IRGR4610DTRLPbF IRGS4610DPbF IRGS4610DTRRPbF IRGS4610DTRLPbF IRGB4610DPbF Absolute Maximum Ratings VCES IC@ T C = 25°C IC@ T C = 100°C ICM ILM IF @ T C = 25°C IF @ T C=100°C IFM VGE PD @ T C =25° PD @ T C =100° TJ T STG 1 Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Max. 600 16 10 Pulsed Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current ‚ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw TO-220 18 24 10 6 24 ± 20 ± 30 77 39 c www.irf.com © 2013 International Rectifier c Submit Datasheet Feedback Units V A V W -40 to + 175 °C 300 10lbf. In (1.1 N.m) October 25, 2013 IRGR/S/B4610DPbF Thermal Resistance Parameter Min. Typ. Max. ––– ––– 1.9 ––– ––– 6.3 RθJC d Thermal Resistance, Junction-to-Case -(Diode)d RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220) ––– 0.5 ––– Thermal Resistance, Junction-to-Ambient (PCB mount) (D-PAK) ––– ––– 50 ––– ––– 110 ––– ––– 40 ––– ––– 62 RθJC Thermal Resistance, Junction-to-Case -(IGBT) h Thermal Resistance, Junction-to-Ambient (D-PAK) Thermal Resistance, Junction-to-Ambient (PCB mount, Steady State) 2 (D PAK) Thermal Resistance, Junction-to-Ambient ( Socket mount) (TO-220) RθJA h Units °C/W Electrical Characteristics @ T J = 25°C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltage 600 V(BR)CES ΔV(BR)CES/ΔT J Temperature Coeff. of Breakdown Voltage — — Collector-to-Emitter Saturation Voltage — VCE(on) — Gate Threshold Voltage 4.0 VGE(th) — ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient gfe Forward Transconductance — — ICES Collector-to-Emitter Leakage Current — — VFM Diode Forward Voltage Drop — Gate-to-Emitter Leakage Current — IGES Typ. — 0.36 1.7 2.07 2.14 — -13 5.8 — — 1.60 1.30 — Max. Units Conditions — V VGE = 0V, Ic =100 μA — V/°C VGE = 0V, Ic = 250μA ( 25 -175 oC ) 2.0 IC = 6.0A, VGE = 15V, T J = 25°C — V IC = 6.0A, VGE = 15V, T J = 150°C — IC = 6.0A, VGE = 15V, T J = 175°C 6.5 V VCE = VGE, IC = 150μA — mV/°C VCE = VGE, IC = 250μA ( 25 -175 oC ) — S VCE = 25V, IC = 6.0A, PW =80μS 25 μA VGE = 0V,VCE = 600V VGE = 0V, VCE = 600V, T J =175°C 250 2.30 V IF = 6.0A — IF = 6.0A, T J = 175°C ±100 nA VGE = ± 20 V e e Notes: VCC = 80% (VCES ), VGE = 20V, L = 1.0mH, RG = 100Ω. Rθ is measured at TJ approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRGR/S/B4610DPbF Switching Characteristics @ T J = 25°C (unless otherwise specified) Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area 5 — — μs Erec trr Irr Reverse recovery energy of the diode Diode Reverse recovery time Peak Reverse Recovery Current — 178 74 12 — — — — — μJ ns A 3 Min. — — — — — — — — — — — — — — — — — — — — www.irf.com © 2013 International Rectifier Typ. 13 3.0 6.4 56 122 178 27 11 75 17 140 189 329 26 12 95 32 350 29 10 Max. — — — — — — — — — — — — — — — — — — — — Units nC μJ ns μJ ns pF Conditions IC = 6.0A VCC = 400V VGE = 15V IC = 6.0A, VCC = 400V, VGE = 15V RG = 47Ω, L=1mH, LS= 150nH, T J = 25°C Energy losses include tail and diode reverse recovery IC = 6.0A, VCC = 400V RG = 47Ω, L=1mH, LS= 150nH T J = 25°C fg IC = 6.0A, VCC = 400V, VGE = 15V RG = 47Ω, L=1mH, LS= 150nH, T J = 175°C Energy losses include tail and diode reverse recovery IC = 6.0A, VCC = 400V RG = 47Ω, L=1mH, LS= 150nH T J = 175°C fg VGE = 0V VCC = 30V f = 1Mhz T J = 175°C, IC = 24A VCC = 500V, Vp =600V RG = 100Ω, VGE = +20V to 0V VCC = 400V, Vp =600V RG = 100Ω, VGE = +15V to 0V o T J = 175 C VCC = 400V, IF = 6.0A VGE = 15V, Rg = 47Ω, L=1mH, LS=150nH Submit Datasheet Feedback October 25, 2013 IRGR/S/B4610DPbF 18 80 16 70 14 60 Ptot (W) IC (A) 12 10 8 50 40 30 6 20 4 10 2 0 0 25 50 75 100 125 150 25 175 50 75 100 125 150 175 TC (°C) TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10 10 IC A) 10μsec IC (A) 100μsec DC 1 1 Tc = 25°C Tj = 175°C Single Pulse 0 0.1 1 10 100 10 1000 VCE (V) VCE (V) 20 20 Top 15 V = 18V GE V = 15V GE VGE = 12V 15 V = 10V GE Bottom VGE = 8.0V 10 ICE (A) ICE (A) 1000 Fig. 4 - Reverse Bias SOA TJ = 175°C, VGE = 20V Fig. 3 - Forward SOA, TC = 25°C, TJ ≤ 175°C, VGE = 15V Top Bottom 10 V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE 5 5 0 0 0 2 4 6 8 10 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs 4 100 www.irf.com © 2013 International Rectifier 0 2 4 6 8 10 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs Submit Datasheet Feedback October 25, 2013 IRGR/S/B4610DPbF 20 Top 15 Bottom 20 V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE 18 16 -40°C 25°C 175°C 14 IF (A) ICE (A) 12 10 10 8 6 5 4 2 0 0 0 2 4 6 8 10 0.0 1.0 2.0 VF (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs 10 8 8 ICE = 3.0A VCE (V) VCE (V) 10 6 ICE = 6.0A ICE = 12A 4 2 6 ICE = 3.0A ICE = 6.0A ICE = 12A 4 2 0 0 5 10 15 20 5 10 VGE (V) 20 Fig. 10 - Typical VCE vs. VGE TJ = 25°C 10 IC, Collector-to-Emitter Current (A) 20 8 VCE (V) 15 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C ICE = 3.0A ICE = 6.0A 6 ICE = 12A 4 2 18 T J = 25°C T J = 175°C 16 14 12 10 8 6 4 2 0 0 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C 5 3.0 www.irf.com © 2013 International Rectifier 4 6 8 10 12 14 16 VGE, Gate-to-Emitter Voltage (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs Submit Datasheet Feedback October 25, 2013 IRGR/S/B4610DPbF 400 1000 350 Swiching Time (ns) Energy (μJ) 300 250 200 EOFF 150 tdOFF 100 tF tR EON 100 50 1 0 2 4 6 8 10 12 14 2 Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 1mH; VCE = 400V, RG = 47Ω; VGE = 15V. 1000 220 200 4 6 8 10 12 14 IC (A) IC (A) Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L=1mH; VCE= 400V RG= 47Ω; VGE= 15V EOFF Swiching Time (ns) 180 Energy (μJ) tdON 10 160 EON 140 120 tdOFF 100 tF tdON 10 tR 100 80 1 60 0 25 50 75 100 0 125 50 100 125 Fig. 16- Typ. Switching Time vs. RG TJ = 175°C; L=1mH; VCE= 400V ICE= 6.0A; VGE= 15V Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15V 22 30 20 25 RG = 10Ω 18 20 15 IRR (A) 16 RG = 22Ω 10 RG = 47Ω 5 RG = 100Ω 14 12 10 8 6 0 2 4 6 8 10 12 14 0 25 50 Fig. 17 - Typical Diode IRR vs. IF TJ = 175°C www.irf.com © 2013 International Rectifier 75 100 125 RG (Ω) IF (A) 6 75 RG (Ω) Rg (Ω) IRR (A) 25 Fig. 18 - Typical Diode IRR vs. RG TJ = 175°C; IF = 6.0A Submit Datasheet Feedback October 25, 2013 IRGR/S/B4610DPbF 1200 20 18 1000 12A 10Ω QRR (nC) IRR (A) 16 14 12 22Ω 800 47Ω 6.0A 600 10 100Ω 400 3.0A 8 200 6 0 200 400 600 800 1000 0 1200 500 1500 diF /dt (A/μs) diF /dt (A/μs) Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V; TJ = 175°C Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 6.0A; TJ = 175°C 50 20 350 300 40 Time (μs) RG = 47Ω 10 30 5 20 Current (A) Isc RG = 22Ω 200 Tsc 15 RG = 10Ω 250 Energy (μJ) 1000 150 RG = 100Ω 100 10 0 50 2 4 6 8 10 12 8 14 10 12 IF (A) 18 Fig. 22- Typ. VGE vs. Short Circuit Time VCC=400V, TC =25°C 16 1000 VGE, Gate-to-Emitter Voltage (V) Cies Capacitance (pF) 16 VGE (V) Fig. 21 - Typical Diode ERR vs. IF TJ = 175°C 100 Coes 10 Cres V CES = 400V V CES = 300V 14 12 10 8 6 4 2 0 1 0 100 200 300 400 500 VCE (V) Fig. 23- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 7 14 www.irf.com © 2013 International Rectifier 0 2 4 6 8 10 12 14 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 6.0A, L=600μH Submit Datasheet Feedback October 25, 2013 IRGR/S/B4610DPbF Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 τJ 0.02 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 Ri (°C/W) R4 R4 τC τ τ2 τ1 τ3 τ2 τ4 τ3 τ4 Ci= τi/Ri Ci i/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 τi (sec) 0.0415 0.000005 0.7262 0.000076 0.7721 0.000810 0.4016 0.004929 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) D = 0.50 0.20 1 0.10 0.05 τJ 0.02 0.1 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 Ri (°C/W) R4 R4 τC τ τ1 τ2 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri Ci i/Ri 1E-005 0.0001 0.000023 1.7733 0.000165 2.9352 0.001493 1.3704 0.013255 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 τi (sec) 0.2195 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 8 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRGR/S/B4610DPbF L L DUT 0 VCC 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.5 - Resistive Load Circuit 9 www.irf.com © 2013 International Rectifier 80 V + - DUT Rg 480V Fig.C.T.2 - RBSOA Circuit Fig.C.T.4 - Switching Loss Circuit Fig.C.T.6 - Typical Filter Circuit for V(BR)CES Measurement Submit Datasheet Feedback October 25, 2013 IRGR/S/B4610DPbF 600 12 600 500 10 500 400 8 400 6 300 90% ICE 200 4 5% ICE 100 VCE (V) VCE (V) tf 300 30 25 tr TEST CURRENT 90% test current 2 100 0 0 -2 -100 10 10% test current 0 0.2 0.4 0.6 0.8 0 Eon Loss 4.3 1 4.5 Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 100 t RR -5 -400 -10 -500 -15 -20 0.05 0.15 0.25 time (μS) WF.3- Typ. Diode Recovery Waveform @ TJ = 175°C using CT.4 10 www.irf.com © 2013 International Rectifier Vce (V) VF (V) 10% Peak IRR Peak IRR -600 -0.05 450 5 0 80 500 10 QRR -200 -300 4.7 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 15 -100 -5 time (μs) time(μs) 0 5 5% VCE Eoff Loss -100 -0.2 15 200 5% VCE 0 20 VCE 70 400 60 350 50 300 40 250 200 30 ICE 20 150 10 100 0 50 -10 0 -20 -2 -1 0 1 2 3 4 5 6 7 8 Time (uS) WF.4- Typ. Short Circuit Waveform @ TJ = 25°C using CT.3 Submit Datasheet Feedback October 25, 2013 IRGR/S/B4610DPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN T HE AS SEMBLY LINE "A" INT ERNAT IONAL RECTIFIER LOGO PART NUMBER IRFU120 12 916A 34 AS S EMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 16 LINE A Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRGR/S/B4610DPbF D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRGR/S/B4610DPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L AS S EMBLY LOT CODE OR INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE P = DES IGNATES LEAD - FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMBLY S ITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 13 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRGR/S/B4610DPbF D2Pak Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 14 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRGR/S/B4610DPbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information E XAMPLE : T HIS IS AN IRF1010 LOT CODE 1789 AS S E MBLE D ON WW 19, 2000 IN T HE AS S E MBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead - F ree" PART NUMBE R INT E RNAT IONAL RECT IF IER L OGO DAT E CODE YEAR 0 = 2000 WE E K 19 L INE C AS S E MBL Y LOT CODE TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualification Information† Industrial Qualification Level Moisture Sensitivity Level (per JEDEC JESD47F) D-Pak 2 D Pak TO-220 RoHS Compliant †† MSL1 N/A Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 15 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013