Advance Technical Information IXFK48N60Q3 IXFX48N60Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 600V 48A Ω 140mΩ 300ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA G D S Tab PLUS247 (IXFX) 48 A 120 A TC = 25°C 48 A EAS TC = 25°C 2 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns PD TC = 25°C 1000 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C z 1.13/10 Nm/lb.in. z 20..120 /4.5..27 N/lb. z 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G z VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = ±30V, VDS = 0V ±200 nA IDSS VDS = VDSS, VGS = 0V 25 μA 1 mA RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Applications V 6.5 Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z BVDSS D = Drain Tab = Drain Features z Characteristic Values Min. Typ. Max. Tab S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D V z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 140 mΩ DS100348(06/11) IXFK48N60Q3 IXFX48N60Q3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 36 S 7020 pF 790 pF 70 pF 0.13 Ω 37 ns 11 ns 40 ns Dim. 9 ns 140 nC 54 nC 60 nC A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs TO-264 AA Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.125 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 48 A Repetitive, Pulse Width Limited by TJM 192 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 24A, -di/dt = 100A/μs 2.2 15.4 VR = 100V, VGS = 0V Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM Outline 300 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK48N60Q3 IXFX48N60Q3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 50 VGS = 10V 100 9V 80 VGS = 10V ID - Amperes ID - Amperes 40 30 20 8V 9V 60 40 8V 10 20 7V 7V 6V 0 0 1 2 3 4 0 5 6 0 7 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 24A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 50 3.4 VGS = 10V 8V VGS = 10V 3.0 R DS(on) - Normalized ID - Amperes 40 30 20 7V 2.6 I D = 48A 2.2 I D = 24A 1.8 1.4 1.0 10 0.6 6V 5V 0 0 2 4 6 8 10 0.2 12 14 16 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 24A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 50 3.0 VGS = 10V 45 TJ = 125ºC 2.6 40 35 2.2 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 1.8 TJ = 25ºC 1.4 30 25 20 15 10 1.0 5 0 0.6 0 10 20 30 40 50 60 70 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 80 90 100 110 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK48N60Q3 IXFX48N60Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 80 70 70 60 TJ = - 40ºC 50 g f s - Siemens ID - Amperes 60 50 40 TJ = 125ºC 25ºC - 40ºC 30 25ºC 40 125ºC 30 20 20 10 10 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 10 20 VGS - Volts 40 50 60 70 80 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 160 16 140 14 120 12 100 10 VGS - Volts IS - Amperes 30 80 60 VDS = 300V I D = 24A I G = 10mA 8 6 TJ = 125ºC 4 40 TJ = 25ºC 20 2 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 VSD - Volts 100 150 200 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 f = 1 MHz 10,000 100 ID - Amperes Capacitance - PicoFarads RDS(on) Limit Ciss Coss 1,000 25µs 100µs 10 1ms Crss 100 1 TJ = 150ºC TC = 25ºC Single Pulse 10 10ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFK48N60Q3 IXFX48N60Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_48N60Q3(R8) 6-22-11