MSN04C0K 40V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 40V,ID =200A RDS(ON) < 4mΩ @ VGS=10V (Typ:3.3mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson Lead Free ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Marking and pin assignment Schematic diagram TO-220-3L top view MSP9435W Package Marking and Ordering Information Device Marking MSN04C0K Device MSN04C0K Device Package Reel Size Tape width Quantity TO-220-3L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Limit Unit 40 V ±20 V ID 200 A ID (100℃) 140 A Pulsed Drain Current IDM 790 A Maximum Power Dissipation PD 260 W 1.73 W/℃ EAS 1500 mJ TJ,TSTG -55 To 175 ℃ Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range MORE Semiconductor Company Limited http://www.moresemi.com 1/6 MSN04C0K Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJc Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition ℃/W 0.58 Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 40 - - V Zero Gate Voltage Drain Current IDSS VDS=40V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=40A - 3.3 4.0 mΩ gFS VDS=5V,ID=40A 60 - - S - 9600 - PF - 890 - PF Crss - 530 - PF Turn-on Delay Time td(on) - 21 - nS Turn-on Rise Time tr VDD=30V,ID=1A - 37 - nS td(off) VGS=10V,RGEN=2.5Ω - 75 - nS - 40 - nS - 170 - nC - 36 - nC - 56 - nC On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=30V,VGS=0V, F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V,ID=30A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=20A - - 1.2 V Diode Forward Current (Note 2) IS - - - 200 A trr TJ = 25°C, IF = 40A - 47.5 - nS (Note3) - 66.3 - nC Reverse Recovery Time Reverse Recovery Charge Qrr Forward Turn-On Time ton di/dt = 100A/μs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=20V,VG=10V,L=0.5mH,Rg=25Ω MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSN04C0K Test circuit 1）EAS test Circuits 2）Gate charge test Circuit: 3）Switch Time Test Circuit： MORE Semiconductor Company Limited http://www.moresemi.com 3/6 MSN04C0K ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Figure 3 Rdson- Drain Current MORE Semiconductor Company Limited Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward http://www.moresemi.com 4/6 C Capacitance (nF) MSN04C0K TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) Power Dissipation (w) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 Power De-rating r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance MORE Semiconductor Company Limited http://www.moresemi.com 5/6 MSN04C0K TO-220-3L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.400 4.600 0.173 0.181 A1 2.250 2.550 0.089 0.100 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 D 9.910 10.250 0.390 0.404 E 8.9500 9.750 0.352 0.384 E1 12.650 12.950 0.498 0.510 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 F 2.650 2.950 0.104 0.116 H 7.900 8.100 0.311 0.319 h 0.000 0.300 0.000 0.012 L 12.900 13.400 0.508 0.528 L1 2.850 3.250 0.112 0.128 V Φ 7.500 REF. 3.400 MORE Semiconductor Company Limited 0.295 REF. 3.800 http://www.moresemi.com 0.134 0.150 6/6