CYSTEKEC MTN3418S3 N-channel mosfet Datasheet

CYStech Electronics Corp.
N-CHANNEL MOSFET
BVDSS
ID
RDSON(max)
MTN3418S3
Spec. No. : C726S3
Issued Date : 2011.12.20
Revised Date : 2013.09.09
Page No. : 1/7
30V
1.9A
110mΩ
Description
The MTN3418S3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High ESD
• High speed switching
• Low-voltage drive(4V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free package
Symbol
Outline
MTN3418S3
D
SOT-323
D
G
S
G:Gate
S:Source
D:Drain
G
S
Ordering Information
Device
MTN3418S3-0-T1-G
MTN3418S3
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C726S3
Issued Date : 2011.12.20
Revised Date : 2013.09.09
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
ID
IDP
Continuous
Pulsed
Drain Current
Limits
30
±20
1.9
7.6
*1
200
400
750
*2
+150
-55~+150
Total Power Dissipation (Ta=25°C)
Total Power Dissipation (Tc=25°C)
ESD susceptibility
Channel Temperature
Storage Temperature
PD
TCH
Tstg
Unit
V
V
A
A
mW
V
°C
°C
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. Human body model, 1.5kΩ in series with 100pF
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Static
BVDSS*
VGS(th)
IGSS
IDSS
RDS(ON)*
30
1
400
GFS
Dynamic
Ciss
Coss
Crss
Source-Drain Diode
*VSD
-
133
90
-
2.5
±5
500
150
110
-
215
54
34
-
Unit
V
V
μA
nA
Test Conditions
mS
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=30V, VGS=0
ID=950mA, VGS=4V
ID=1.9A, VGS=10V
VDS=10V, ID=500mA
-
pF
VDS=10V, VGS=0, f=1MHz
1
V
VGS=0V, ISD=1A
mΩ
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
MTN3418S3
CYStek Product Specification
Spec. No. : C726S3
Issued Date : 2011.12.20
Revised Date : 2013.09.09
Page No. : 3/7
CYStech Electronics Corp.
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
300
1.8
10V
8V
6V
5V
4V
Drain Current - ID(A)
1.6
1.4
1.2
Static Drain-Source On-state
Resistance-RDS(on)(mΩ)
2
3V
1
0.8
0.6
0.4
250
200
ID=0.4A, VGS=4V
150
100
ID=0.7A, VGS=10V
50
VGS=2.5V
0.2
0
0
0
0.2
0.4
0.6
0.8
Drain-Source Voltage -VDS(V)
1
1.2
0
50
100
150
Ambient Temperature-Ta(°C)
200
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
2
1000
Drain Current-ID(on)(A)
Static Drain-Source On-State
Resistance-RDS(on)(mΩ)
1.8
VGS=4V
100
VGS=10
1.6
1.4
Ta=75°C
Ta=25°C
1.2
1
0.8
0.6
0.4
0.2
0
10
1
10
100
1000
Drain Current-ID(mA)
0
10000
1
1.5
2
2.5
3
Gate-Source Voltage-VGS(V)
3.5
4
Forward Drain Current vs Source-Drain Voltage
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10000
500
450
Ta=25°C
400
VGS=0V
ID=1.9A
350
Forward Current-IF(mA)
Static Drain-Source On-State
Resistance-RDS(ON)(mΩ)
0.5
0.7A
300
250
200
0.4A
150
1000
100
10
100
50
1
0
0
MTN3418S3
2
4
6
8
10
Gate-Source Voltage-VGS(V)
12
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Source Drain Voltage -VSD(V)
CYStek Product Specification
Spec. No. : C726S3
Issued Date : 2011.12.20
Revised Date : 2013.09.09
Page No. : 4/7
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Capacitance vs Reverse Voltage
10
Forward Transfer Admittance---GFS(S)
Capacitance-(pF)
1000
Ciss
100
Coss
Crss
f=1MHz
10
VGS=0V
25°C
1
75°C
0.1
0
5
10
15
20
25
Drain-to-Source Voltage-VDS(V)
1
30
10
100
1000
10000
Drain Current---ID(mA)
Power Derating Curve
Maximum Safe Operating Area
250
10
Drain Current --- ID(A)
DC
Power Dissipation---PD(mW)
100μs
1ms
10ms
1
100ms
Operation in this area is
limited by RDS(ON)
0.1
Ta=25°C, Single pulse, mounted on a
ceramic board(900mm² ×0.8mm)
1
10
Drain-Source Voltage -VDS(V)
150
100
50
0
0.01
0.1
200
100
0
50
100
150
Ambient Temperature---TA(℃)
200
Gate SourceThreshold Voltage-VGS(th)(V)
Gate Threshold Voltage vs Ambient Temperature
2.4
2.2
2
ID=1mA
1.8
1.6
1.4
1.2
ID=250μA
1
0.8
-50
MTN3418S3
0
50
100
150
Junction Temperature-Tj(°C)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C726S3
Issued Date : 2011.12.20
Revised Date : 2013.09.09
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTN3418S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C726S3
Issued Date : 2011.12.20
Revised Date : 2013.09.09
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN3418S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C726S3
Issued Date : 2011.12.20
Revised Date : 2013.09.09
Page No. : 7/7
SOT-323 Dimension
Device
Code
KTTE
XX
Marking:
Date
Code
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
Style: Pin 1.Gate 2.Source 3.Drain
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN3418S3
CYStek Product Specification
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