GC01MPS12-252 1200 V SiC MPS™ Diode Silicon Carbide Power Schottky Diode VRRM IF (Tc = 1335°C) QC Features = = = 1200 V 3A 6 nC Package High Avalanche (UIS) Capability Enhanced Surge Current Capability 175 °C Maximum Operating Temperature Temperature Independent Switching Behavior Positive Temperature Coefficient Of VF Extremely Fast Switching Speeds Superior Figure of Merit QC/IF case 2 1 TO-252-2L Advantages Applications Low Standby Power Losses Improved Circuit Efficiency (Lower Overall Cost) Low Switching Losses Ease of Paralleling Devices without ithout Thermal Runaway Smaller Heat Sink Requirements Low Reverse Recovery Current Low Device Capacitance Low Reverse Leakage Current att Operating Temperature Power Factor Correction (PFC) Switched-Mode Mode Power Supply (SMPS) Solar Inverters Wind Turbine Inverters Motor Drives Induction Heating Uninterruptible Power Supply (UPS) High Voltage Multipliers Absolute Maximum Ratings Parameter Repetitive Peak Reverse Voltage Continuous Forward Current Non-Repetitive Peak Forward Surge Current, Half Sine Wave Repetitive Peak Forward Surge Current, Half Sine Wave Non-Repetitive Peak Forward Surge Current I2t Value Non-Repetitive Avalanche Energy Diode Ruggedness Power Dissipation Operating and Storage Temperature Symbol VRRM IF IF,SM IF,RM IF,max ∫i2 dt EAS dV/dt Ptot Tj , Tstg Conditions Values 1200 6 3 1 10 8 6 3 65 0.9 20 100 66 -55 55 to 175 TC = 25 °C, D = 1 TC = 135 °C, D = 1 TC = 170 °C, D = 1 TC = 25 °C, tP = 10 ms TC = 150 °C, tP = 10 ms TC = 25 °C, tP = 10 ms TC = 150 °C, tP = 10 ms TC = 25 °C, tP = 10 µs TC = 25 °C, tP = 10 ms L = 60 mH, IAV = 1 A, VDD = 60 V VR = 0 ~ 960 V TC = 25 °C Unit V A A A A A2s mJ V/µs W °C Electrical Characteristics Parameter Symbol Diode Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Switching Time ts Total Capacitance C Conditions IF = 1 A, Tj = 25 °C IF = 1 A, Tj = 175 °C VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 175 °C VR = 400 V IF ≤ IF,MAX VR = 800 V dIF/dt = 200 A/μs VR = 400 V Tj = 175 °C VR = 800 V VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 800 V, f = 1 MHz, Tj = 25 °C min. Values typ. 1.5 2.3 0.1 0.8 4.5 6 max. 1.8 2.7 1 9 Unit V µA nC < 10 ns 68 4.5 pF 2.3 °C/W Thermal / Mechanical Characteristics Thermal Resistance, Junction - Case Feb 2018 Rev1.1 RthJC http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 1 of 6 GC01MPS12-252 1200 V SiC MPS™ Diode IF = f(VF,Tj); tP = 300 µss IF = f(VF,Tj); tP = 300 µs Figure 1: Typical Forward Characteristics Figure 2: Typical High Current Forward Characteristics IR = f(VR,Tj) Ptot = f(Tj) Figure 3: Typical Reverse Characteristics Figure 4: Power Derating Curve Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 2 of 6 GC01MPS12-252 1200 V SiC MPS™ Diode IF = f(TC); D = tP/T, tP= 10 µs C = f(VR); Tj = 25 °C;; f = 1MHz Figure 5: Current Derating Curves Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics Qc = f(VR); Tj = 25 °C;; f = 1MHz EC = f(VR); Tj = 25 °C;; f = 1MHz Figure 7: Typical Capacitive Charge vs. Reverse Voltage Characteristics Figure 8: Typical Capacitive Energy vs. Reverse Voltage Characteristics Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 3 of 6 GC01MPS12-252 1200 V SiC MPS™ Diode Zth,jc = f(tP,D); D = tP/T Figure 9: Transient Thermal Impedance IF = (VF – VBI)/RDIFF Built-In Voltage (VBI): VBI(Tj) = m*Tj + b, m = -1.25e-03, 03, b = 0.904 Differential Resistance (RDIFF): RDIFF(Tj) = a*Tj2 + b*Tj + c (Ω); a = 7.60e-05, 05, b = 8.48e-03, 8.48e c = 2.32 IF = f(VF, Tj) Figure 10:: Forward Curve Model Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 4 of 6 GC01MPS12-252 1200 V SiC MPS™ Diode Package Dimensions: TO-252-2L PACKAGE OUTLINE 0.265 (6.73) 0.252 (6.40) 0.094 (2.38) 0.087 (2.20) 0.050 (1.27) 0.035 (0 0.89) 0.215 (5.46) 0.205 (5.21) 0.023 (0.58) 0.018 (0.46) SEATING PLANE 0.409 (10.40) ( 0.370 (9.40) 0.245 (6.22) 0.236 (6.00) 0.173 173 (4.40) min 0.205 (5.21) min 0.005 (0.127) max 0.045 (1.14) 0.030 (0.77) 0.090 BSC (2.286 BSC) 0.035 (0 0.88) 0.025 (0 0.64) 0.023 (0.58) 0.018 (0.46) 0.070 (1.77) 0.055 (1.40) 0.1080 REF (2.743 REF) 0.020 BSC (0.508 BSC) 0.180 BSC (4.572 BSC) Recommended Solder Pad Layout 0.236 (6.00) 0.256 (6.50) 0.246 (6.25) 0.118 (3.00) 0.055 (1.40) 0.090 (2.29) 0.055 (1.40) 0.090 (2.29 29) NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 5 of 6 GC01MPS12-252 1200 V SiC MPS™ Diode RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented ented January 2, 2013. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACH Compliance REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Chemi Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up up-to-date REACH SVHC Declaration. REACH REAC banned substance information (REACH Article 67) 7) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life life-support support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Related Links Soldering Document: http://www.genesicsemi.com/quality/quality http://www.genesicsemi.com/quality/quality-manual/ Tin-whisker Report: http://www.genesicsemi.com/quality/compliance/ Reliability Report: http://www.genesicsemi.com/quality/reliability/ Copyright © 2018 GeneSiC Semiconductor Inc. All Rights Reserved The information in this document is subject to change without notice Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 Page 6 of 6 GC01MPS12-252 1200 V SiC MPS™ Diode SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/GC01MPS12 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/GC01MPS12-252_SPICE.pdf) http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/GC01MPS12 into LTSPICE (version 4) software tware for simulation of the G GC01MPS12-252. * GeneSiC Semiconductor SiC MPS TM Rectifier * Revision: 1.1 * Date: February-2018 ************************************************************************** ** TO-252-2 2 package ************************************************************************** .SUBCKT GC01MPS12 A K Case L_anode A AD 6n D1 AD Case GC0 GC01MPS12 L_cathode K Case 6n .ends *********************************************** ************************************************************************** *************************** .SUBCKT GC01MPS12 12 ANODE KATHODE D1 ANODE KATHODE GC01MPS12_SCHOTTKY 12_SCHOTTKY .MODEL GC01MPS12_SCHOTTKY 12_SCHOTTKY D + IS 1.01E-15 15 RS 0.622 + N 1 IKF 500 + EG 1.2 XTI 2 + TRS1 0.005434 TRS2 2.717E-05 + CJO 9.48E-11 VJ 0.879 + M 0.438 FC 0.5 + TT 1.00E-10 BV 1600 + IBV 0.1E-06 VPK 1200 + IAVE 1 TYPE SiC_MPSTM + MFG GeneSiC_Semi .ENDS * End of GC01MPS12-252 SPICE Model ************************************************************************** * This model is provided "AS IS, WHERE IS, AND WITH NO WARRANTY OF ANY KIND * EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED * WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE." Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 1 of 1