BAS70 / -04 / -05 / -06 Taiwan Semiconductor Small Signal Product 225mW SMD Switching Diode FEATURES - Low turn-on voltage - Fast switching - PN junction guard ring for transient and ESD protection MECHANICAL DATA SOT-23 - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260oC/10s - Weight: 0.008grams (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER VALUE UNIT 70 V VR(RMS) 49 V (Note 1) IF 70 mA @ t ≦ 1.0 s IFSM 100 mA Power Dissipation (Note 1) PD 200 mW Thermal Resistance Junction to Ambient Air (Note 1) RθJA 625 K/W TJ -55 to + 125 °C TSTG -55 to + 150 °C SYMBOL Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM VR DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current Operating Junction Temperature Storage Temperature Range PARAMETER IR = 10 µA Reverse breakdown voltage tp=300µs , IF=1.0mA Forward voltage tp＜300µs , IF=15mA SYMBOL MIN MAX UNIT V(BR) 70 - V - 410 - 1000 VF mV Reverse leakage current tp＜300µs , VR=50V IR - 100.00 nA Junction capacitance VR = 0 V, f = 1 MHz CJ - 2 pF trr - 5 ns Reverse revovery time IF = IR = 10 mA, IRR = 100 Ω, IRR = 1 mA Notes: 1. Valid provided that terminals are kept at ambient temperature 2. Test period ＜ 3000 µs Document Number: DS_S1404012 Version: E14 BAS70 / -04 / -05 / -06 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) Fig. 2 Maximum Non-Repetitve Peak Forward Surge Current Per Leg 200 100 0 0 25 50 75 100 125 Peak Forward Surge Current (mA) PD - Power Dissipation (mW) Fig.1 Power Derating Curve 100 8.3 ms single half sine wave (JEDEC Method) 50 0 1 TA - Ambient Temperature (oC) 10 Fig. 3 Typical Forward Characteristics Fig. 4 Typical Reverse Characteristics 100 10000 10 TA= -40 °C TA= 0 °C TA= 25 °C TA= 75 °C 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IR - Instantaneous Reverse Current (nnA) Instantaneous Forward Current (mA) 100 Numbers of Cycles at 60 Hz TA=125 °C 1000 TA=70 °C 100 TA=25 °C 10 TA=0 °C 1 TA= -40 °C 0.1 0 10 20 30 40 VR - Reverse Voltage (V) VF, Instantaneous Forward Voltage (V) Fig. 6 Typical Transient Thermal Characteristics Fig. 5 Typical Total Capacitance VS. Reverse Voltage Junction Capacitance (pF) 2 1 0 0 5 10 Reverse Voltage (V) 15 20 Transient Thermal Impedance (oC/W) 100 f=1.0MHz 10 1 0.1 0.01 0.1 1 10 100 Pulse Duration (sec) Document Number: DS_S1404012 Version: E14 BAS70 / -04 / -05 / -06 Taiwan Semiconductor Small Signal Product ORDERING INFORMATION GREEN PART NO. MANUFACTURE PACKING CODE CODE COMPOUND PACKAGE PACKING MARKING CODE BAS70 RF G SOT-23 3K / 7" Reel 73 BAS70-04 RF G SOT-23 3K / 7" Reel 74 BAS70-05 RF G SOT-23 3K / 7" Reel 75 BAS70-06 RF G SOT-23 3K / 7" Reel 76 (Note) Note: Manufacture special control, if empty means no special control requirement. EXAMPLE GREEN MANUFACTURE PREFERRED P/N PACKING CODE PART NO. COMPOUND DESCRIPTION CODE CODE BAS70 RFG BAS70 BAS70-B0 RFG BAS70 BAS70-D0 RFG BAS70 Document Number: DS_S1404012 RF G Green compound B0 RF G Green compound D0 RF G Green compound Version: E14 BAS70 / -04 / -05 / -06 Taiwan Semiconductor Small Signal Product PACKAGE OUTLINE DIMENSIONS Unit (mm) Unit (inch) DIM. Min Max Min Max A 2.70 3.10 0.106 0.122 B 1.10 1.50 0.043 0.059 C 0.30 0.51 0.012 0.020 D 1.78 2.04 0.070 0.080 E 2.10 2.64 0.083 0.104 F 0.89 1.30 0.035 0.051 G 0.55 REF 0.022 REF H 0.1 REF 0.004 REF Unit (mm) Unit (inch) Z Typ. 2.9 Typ. 0.114 X 0.8 0.031 Y 0.9 0.035 C 2.0 0.079 E 1.35 0.053 SUGGEST PAD LAYOUT DIM. Pin Configuration BAS70 Document Number: DS_S1404012 BAS70-04 BAS70-05 BAS70-06 Version: E14