HDSEMI HD10U100-F-CT To-220 plastic-encapsulate diode Datasheet

HD10U100(F)CT
HD TO60X2
TO-220 Plastic-Encapsulate Diodes
Schottky Rectifier
Features
●Io
10A
ITO- 220 AB
TO- 220 AB
100V
●VRRM
●High surge current capability
●Low Vf
Applications
● Rectifier
1
Marking
1
2
● HD10U100(F)CT
Item
3
PIN 1
PIN 2
PIN 3
CASE
3
HD10U100(F)CT
Symbol
Unit
Repetitive Peak Reverse Voltage
VRRM
V
Average Rectified Output Current
Io
A
60HZ Half-sine wave, Resistance
load, Tc(Fig.1)
10.0
IFSM
A
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
120
TJ
℃
-55~+150
TSTG
℃
-55 ~ +150
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
Test Conditions
2
100
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
Item
Peak Forward Voltage
Peak Reverse Current
Thermal
Resistance(Typical)
Symbol
Unit
VF
V
IRRM1
IRRM2
RθJ-C
mA
℃/W
Test Condition
IF =5.0A
VRM=VRRM
HD10U100(F)CT
0.74(MAX)
0.68(TYP)
Ta =25℃
0.1
Ta =125℃
2.5
Between junction and case
1)
2.0
Notes:
Thermal resistance from junction to case per leg with heat-sink size of 2"×3"×0.25" AL-plate
High Diode Semiconductor
1
Typical Characteristics
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
IFSM(A)
IO(A)
FIG.1: FORWARD CURRENT DERATING CURVE
12
10
210
180
8.3ms Single Half Sine Wave
JEDEC Method
150
8
120
6
90
4
60
2
30
0
50
70
90
110
130
150
Tc(℃)
0
1
100
Number of Cycles
FIG3:Instantaneous Forward Voltage
FIG.4:TYPICAL REVERSE CHARACTERISTICS
60
IR(mA)
IF(A)
10
40
10
20
Tj=125℃
1.0
10
5.0
0.1
1.0
Tj=75℃
0.01
0.5
0.2
0.1
Ta=25℃
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
VF(V)
0.001
Tj=25℃
0
20
40
High Diode Semiconductor
60
80
100
Voltage(%)
2
TO- 220
TO- 220 AB
ITO- 220 AB
JSHD
JSHD
High Diode Semiconductor
3
TO- 220 P acking Information
Part Number
tube
inner box
outer container
Quantity
50 pieces
1000 pieces
5000 pieces
Size(mm)
530*33*7
558*150*40
570*235*170
High Diode Semiconductor
4
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