Preliminary Datasheet LPA2163 Build in EQ Function 8W Class- F Audio Amplifier With Boost Convertor Integrated General Description Features The LPA2163 is a Build in EQ Function 8W, class-F Build in EQ Function audio amplifier with boost convertor integrated. It offers Integrated boost convertor low THD+N, allowing it to achieve high-quality Power Shut-down current:<3uA Supply filterless Output voltage Up to 5.0V/2.0A architecture allows the device to drive the speaker Internal Compensation directly requiring no low-pass output filters, thus to save Max duty cycle: 90% 500KHz fixed frequency switching for amplifier work at class_D mode and 1.2MHz for step up convertor POUT at 10% THD+N，VIN=3.7V for boost convertor sound reproduction. The new the system cost and PCB area. With high performance inductor and diode，the boost convertor can offer 2A output current for load. It can provide up to 6.5V stable RL=4Ω，POUT=4.8W，boost to 6.0V for amplifier DC voltage for amplifier so that it can display 5.7W output at 10% THD with a 4Ω load. When it provides 5.0V DC voltage, it can provide 3.4W output at 10% THD with a RL=2Ω，POUT=8W，boost to 6.0V for amplifier RL=4Ω，POUT=3.8W，boost to 6.0V for amplifier 4Ω load. The LPA2163 also can work at class-AB mode which make LPA2163 could apply to device with radio receiver. The other character of LPA2163 contact OCP、 POUT at 1% THD+N，VIN=3.7V for boost convertor RL=4Ω，POUT=6W，boost to 6.0V for amplifier Filterless, Low Quiescent Current and Low EMI Amplifier Efficiency up to 84% OTP and high noise suppression for FR signal. The Excellent POP&CLICK rejection LPA2163 is available in ESOP-16. Short Circuit Protection, OCP, OTP Few External Components to Save the Space and cost Free LC filter digital modulation, direct-drive speakers Pb-Free Package Order Information LPA2163 □ □ □ F: Pb-Free Package Type ESOP-16 Applications Portable Bluetooth Speaker Cellular and Smart mobile phone Square Speaker LPA2163–00 Version 1.0 May.-2013 Marking Information Device Marking Package Shipping LPA2163SPF LPS ESOP-16 3K/REEL LPA2163 YWX Y: Y is year code. W: W is week code. X: X is series number. Email: [email protected] www.lowpowersemi.com Page 1 of 18 Preliminary Datasheet LPA2163 Typical Application Circuit PGND 1 16 FB VIN 2 15 NC EN 3 14 SW AGND 4 13 OUT+ 12 GND 17 LPA2163–00 Version 1.0 SD 5 BYP 6 11 VDD EQ 7 10 OUT- IN 8 9 MODE May.-2013 PGND Email: [email protected] www.lowpowersemi.com Page 2 of 18 Preliminary Datasheet LPA2163 Functional Pin Description Pin No. 1,17 PIN Name PGND 2 VIN Power supply for boost convertor. 3 EN Enable pin for boost convertor. Active high. 4 AGND 5 SD 6 BYP 7 EQ 8 IN 9 MODE Class_AB and class_D mode switch pin. Choise class_D mode with high voltage. 10 OUT- Negative output of amplifier. 11 VDD Power supply for amplifier. 12 GND Ground for amplifier. 13 OUT+ Positive output of amplifier. 14 SW Switch pin for boost convertor. 15 NC No connection. 16 FB Feedback pin. LPA2163–00 Version 1.0 DESCRIPTION Power ground pin. Analog power ground for boost convertor. Amplifier shutdown pin. Active high. Bypass pin. Connect a 1uF capacitor to ground. EQ pin of amplifier. With resistor (R3) and capacitor (C10) in series between IN and VEQ, the high frequencies could be attenuated. Input of amplifier. With resistor (R6) and capacitor(C8) in series between IN and signal, the low frequencies could be attenuated. May.-2013 Email: [email protected] www.lowpowersemi.com Page 3 of 18 Preliminary Datasheet LPA2163 Classical Application 1: Low Restraint C9=0.22uF,R6=NC,C8=NC,R5=18kΩ,C10=NC,R3=NC,R4=33kΩ C9=0.1uF,R6=20kΩ,C8=10nF,R5=18kΩ,C10=NC,R3=NC,R4=47kΩ LPA2163–00 Version 1.0 May.-2013 Email: [email protected] www.lowpowersemi.com Page 4 of 18 Preliminary Datasheet LPA2163 Classical Application 2: High Restraint C9=0.22uF,R6=NC,C8=NC,R5=18kΩ,C10=NC,R3=NC,R4=33kΩ C9=1uF,R6=NC,C8=NC,R5=10kΩ,C10=33Nf,R3=10KΩ,R4=47KΩ LPA2163–00 Version 1.0 May.-2013 Email: [email protected] www.lowpowersemi.com Page 5 of 18 Preliminary Datasheet LPA2163 Classical Application 3: High and Low Restraint (Band Pass) C9=0.22uF,R6=NC,C8=NC,R5=18kΩ,C10=NC,R3=NC,R4=33kΩ LPA2163–00 Version 1.0 May.-2013 Email: [email protected] www.lowpowersemi.com Page 6 of 18 Preliminary Datasheet LPA2163 Absolute Maximum Ratings Supply voltage for boost convertor -------------------------------------------------------------------------- -0.3V to 6V Supply voltage for amplifier --------------------------------------------------------------------------------- Lead Temperature (Soldering, 10 sec.) ---------------------------------------------------------------------------- 260°C Storage Temperature Range ---------------------------------------------------------------------------- −65°C to 150°C Operation Junction Temperature Range -------------------------------------------------------------- −40°C to 125°C Operation Ambient Temperature Range----------------------------------------------------------------- Maximum Junction Temperature Range---------------------------------------------------------------------------- -0.3V to 6.5V −40°C to 85°C 125°C Recommended Operating Conditions Supply voltage for boost convertor -------------------------------------------------------------------------- 2.5V to 5.0V Supply voltage for amplifier ---------------------------------------------------------------------------------- 2.5V to 6.0V Thermal Information Parameter Symbol Package Maximum Unit Thermal resistance (junction to ambient) θJA ESOP16 65 ℃/W Thermal resistance (junction to case) θJC ESOP16 23 ℃/W LPA2163–00 Version 1.0 May.-2013 Email: [email protected] www.lowpowersemi.com Page 7 of 18 Preliminary Datasheet LPA2163 Electrical Characteristics For Amplifier (TA = 25° C, unless otherwise specified) Parameter Symbol Supply power Test Conditions VIN Power supply ripple rejection PSRR Signal-to-nois e ratio SNR Eifficency Quiescent current Shutdown current Offset output voltage Frequency for class_D 4.8 3.2 6.0 4.7 3.2 5.9 VDD=5.0V 3.8 3.7 THD+N=10%, f=1kHz,RL=2Ω THD+N=1%, f=1kHz,RL=4Ω THD+N=1%, f=1kHz,RL=3Ω THD+N=1%, f=1kHz,RL=2Ω VDD=6.0V VDD=5.0V VDD=6.0V VDD=5.0V VDD=6.0V VDD=5.0V VDD=6.0V VDD=5.0V 8.0 5 3.8 2.5 4.8 3.1 6.1 4 7.9 5 3.7 2.6 4.7 3.2 6.0 4 INPUT ac-grounded with CIN=0.47uF, VDD=6.0V f=100HZ LPA2163–00 f=1kHz 6.0 V W -50 -90 η RL=4Ω,PO=0.6W f=1kHz 84 IQ VDD=5.0V No load -91 7 2 VDD=5.0V, VSD =0V fsw 1.1 mA uA 2 500 Email: [email protected] dB % 4.65 ISD May.-2013 Units dB f=1kHz Version 1.0 Max -75 VDD=5V,POUT=0.5W, RL=2Ω VOS Class-AB VDD=6.0V VDD=5.0V VDD=6.0V THD+N=10%, f=1kHz,RL=3Ω PO Typ Class-D 2.5 THD+N=10%, f=1kHz,RL=4Ω Output power Min www.lowpowersemi.com mV kHz Page 8 of 18 Preliminary Datasheet LPA2163 Electrical Characteristics For Boost Convertor (VIN=3.6V,VOUT=5V,CIN=22uF,COUT=22uF//10uF,L=2.2uH) Parameter Conditions Boost of LPA2163 Min Typ Max Units Supply Voltage 2.2 5.5 V Output Voltage Range 2.5 6.5 V 1 uA 150 uA 0.612 V 50 nA Supply Current(Shutdown) VEN=VOUT=0V, VIN=5V Supply Current VEN=VIN=3.6V, VFB=0.6V Feedback Voltage 0.588 Feedback Input Current 0.6 VFB=0.6V Switching Frequency 1200 kHz Maximum Duty Cycle 90 % EN Input Low Voltage 0.4 EN Input High Voltage 1.4 Limit current of power MOSFET RDS(ON) LPA2163–00 VOUT=3.3V Version 1.0 V May.-2013 Email: [email protected] V 6 A 100 mΩ www.lowpowersemi.com Page 9 of 18 Preliminary Datasheet LPA2163 Typical Operating Characteristic For Amplifier LPA2163–00 Version 1.0 May.-2013 Email: [email protected] www.lowpowersemi.com Page 10 of 18 Preliminary Datasheet LPA2163–00 Version 1.0 May.-2013 Email: [email protected] www.lowpowersemi.com LPA2163 Page 11 of 18 Preliminary Datasheet LPA2163–00 Version 1.0 May.-2013 Email: [email protected] www.lowpowersemi.com LPA2163 Page 12 of 18 Preliminary Datasheet LPA2163–00 Version 1.0 May.-2013 Email: [email protected] www.lowpowersemi.com LPA2163 Page 13 of 18 Preliminary Datasheet LPA2163 Typical Operating Characteristic For Boost Convertor Vin=3.3V Vout=5V, 0mA Vin=3.3V Vout=5V, 50mA Vin=3.3V Vout=5V, 100mA Vin=3.3V Vout=5V, 2A Start up wave LPA2163–00 Version 1.0 May.-2013 Email: [email protected] www.lowpowersemi.com Page 14 of 18 Preliminary Datasheet LPA2163 Applications Information(for Amplifier) recommended, placing it near the audio power Maximum Gain amplifier. The LPA2163 has two internal amplifier stages. The Signal Frequency suppress first stage's gain is externally configurable, while the second stage's is internally fixed. The closed-loop gain of the first stage is set by selecting the ratio of R4 to R5 while the second stage's gain is fixed at 1.5x.The output of amplifier serves as the input to amplifier 2, thus the two amplifiers produce signals identical in magnitude, but different in phase by 180°. Consequently, the differential gain for the IC is: Av=2*1.5*R4 / R5 (for class_AB & class_D) The LPA2163 has a EQ pin which is the negative output of amplifier as show below. With R3 and C10, we can suppress high frequency part of signal. And the low frequency part of signal could be attenuated by R6 and C8. fH= f L= 1 ; 2R 6 C 8 1 ; 2R 3 C10 Shutdown operation In order to reduce power consumption while not in use, the LPA2163 contains shutdown circuitry to turn off the amplifier's bias circuitry. This shutdown feature turns the amplifier off when logic high is applied to the SD pin. By switching the SD pin connected to high voltage, the LPA2163 supply current draw will be minimized in idle mode. amplifier that requires adequate power supply decoupling to ensure the output THD and PSRR a low as possible. Power supply decoupling affects low Optimum decoupling is achieved by using two capacitors of different types targeting to different types of noise on the power supply leads. For higher frequency transients, spikes, or digital hash on the equivalent-series-resistance line, a (ESR) good ceramic close as possible to the device VDD terminal. For filtering lower- frequency noise signals, a large LPA2163–00 of 20μF Version 1.0 damage when the internal die (ceramic) May.-2013 or greater tolerance on this trip point from device to device. Once the die temperature exceeds the thermal set point, the device outputs are disabled. This is not a latched fault. The thermal fault is cleared once the temperature of the die is reduced by 30℃. This large hysteresis will prevent motor boating sound well and the device begins normal operation at this point without external system intervention. low capacitor, typically 1.0μF, works best, placing it as capacitor from temperature exceeds 150℃. There is a 15 degree The LPA2163 is a high performance CMOS audio response. Thermal protection on the LPA2163 prevents the device Power supply decoupling frequency Over Temperature Protection is Analog Reference Bypass Capacitor (CBYP) In addition to system cost and size, click and pop performance is affected by the size of the input coupling capacitor, CBYP. A larger input coupling capacitor requires more charge to reach its quiescent DC voltage (nominally 1/2 VDD). This charge comes Email: [email protected] www.lowpowersemi.com Page 15 of 18 Preliminary Datasheet LPA2163 from the internal circuit via the feedback and is apt to to the inductor current to regulate the output voltage. create pops upon device enable. Thus, by minimizing The use of current-mode regulation improves the capacitor size based on necessary low frequency transient response and control loop stability. response, turn-on pops can be minimized. When the boost convertor is disabled (EN=Low), The Analog Reference Bypass Capacitor (CBYP) is both power switches are off. There is no current path the most critical capacitor and serves several from SW to OUT. Therefore, the output voltage important functions. During start-up or recovery from discharges to ground. When the boost convertor is shutdown mode, CBYP determines the rate at which enabled (EN=High), a limited start-current charges the amplifier starts up. The second function is to the output voltage rising to SW, then TH part reduce noise caused by the power supply coupling operates in force PWM mode for regulating the into the output drive signal. This noise is from the output voltage to the target value. At the beginning of internal analog reference to the amplifier, which each cycle, the N-channel MOSFET switch is turned appears as degraded PSRR and THD+N. on, forcing the inductor current to rise. The current at the source of the switch is internally measured and How to reduce EMI converted to a voltage by the current sense amplifier. A simple solution is to put an additional capacitor That voltage is compared to the error voltage. When 220pF at power supply terminal for power line. The the inductor current rises sufficiently, the PWM traces from amplifier to speakers should design as comparator turns off the switch, forcing the inductor short as we can. current to the output capacitor which forces the inductor current to decrease. The peak inductor current is controlled by the error voltage. Thus the output voltage controls the inductor current to satisfy the lode. Setting the Output Voltage Set the output voltage by selecting the resistive Applications Information(for Boost) voltage divider ratio. The voltage divider drops the The LP2163 integrates a 1200KHz fixed frequency, output voltage to the 0.6V feedback voltage. Use a current-mode regulation architecture to regulate the 100K resistor for R2 of the voltage divider. Determine boost the high-side resistor R1 by the equation: convertor output voltage. The LP2163 measures the output voltage through an external Vout=(R1/R2+1) x VFB resistive voltage divider and compares that to the Vout=(R1/R2+1) x 0.6V internal 0.6V reference to generate the error voltage LPA2163–00 Version 1.0 May.-2013 Email: [email protected] www.lowpowersemi.com Page 16 of 18 Preliminary Datasheet LPA2163 PCB Layout notices 1, In the path of the power supply, plus a 1uF and a 10uF to ground high-frequency filter capacitor. These caps can be connected to the thermal pad directly for an excellent ground connection. Consider adding a small, good quality low ESR ceramic capacitor may achieve better sound effects. 2, Large (470 µF or greater) bulk power supply decoupling capacitors should be placed near the LPA2163 on the VDD supplies. Local, high-frequency bypass capacitors should be placed as close to the VDD pins as possible. 3, The power line, ground line and filter capacitor and bypass capacitors as close to the chip's pins, remember not to put the capacitor on the back of the board, through tiny holes through the jumper even over. Keep the current loop from each of the outputs through the ferrite bead and the small filter cap and back to PGND as small and tight as possible. The size of this current loop determines its effectiveness as an antenna. 4, Power, ground, and a large current line must try to be wide enough, if you want to add vias, the number of through-holes must be at least 6. The thermal pad must be soldered to the PCB for proper thermal performance and optimal reliability. 5, GND and VDD should be put independently, high-power signals to avoid interference. 6, If you want to pursue as large as the effect of power, a large selection of speakers or sound chamber with low resistance (such as 3.6Ω) speakers, or added to improve the supply voltage boost circuit. 7, Including the line between large current cell and chip, the inductor should be as close and short as possible to chip for a high performance. Adding a coil to this pin would be helpful for EMI certification. If there is a high standards needed in LPA2163 application, we could add a coil and capacitor between chip and speaker constituting a LC filter which coil would be 100MHz, 100~150Ω and its DCI beyond 3A placing as close as possible to chip, the capacitor should be 1nF connecting the PGND. 8, The position under the amplifier chip on the board must be added vents and large areas of exposed copper and tin to enhance heat dissipation. 9, In case of fixed gain and meeting demand, it should make CIN small as possible as we can because it constitute a high through filter with Rin which cutoff frequency is 1/2*3.414*Cin*Rin. A high capacitance cap could make POP worse. PCB LAYOUT（LPA2163SPF+LPA2173SPF） LPA2163–00 Version 1.0 May.-2013 Email: [email protected] www.lowpowersemi.com Page 17 of 18 Preliminary Datasheet LPA2163 Packaging Information ESOP-16 LPA2163–00 Version 1.0 May.-2013 Email: [email protected] www.lowpowersemi.com Page 18 of 18