BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V(BR)DSS RDS(ON) -50V 10Ω VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. General Purpose Interfacing Switch Power Management Functions Analog Switch Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 e3 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Weight: 0.006 grams (approximate) Drain SOT323 D Gate G S Source Equivalent Circuit Top View Top View Ordering Information (Note 4 & 5) Part Number BSS84W-7-F BSS84WQ-7-F Notes: Compliance Standard Automotive Case SOT323 SOT323 Packaging 3000 / Tape & Reel 3000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. Marking Information K84 = Product Type Marking Code Chengdu A/T Site Date Code Key Year Code Month Code 2012 Z Jan 1 Shanghai A/T Site 2013 A Feb 2 BSS84W Document number: DS30205 Rev. 15 - 2 YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM K84 Mar 3 2014 B Apr 4 May 5 2015 C Jun 6 1 of 5 www.diodes.com 2016 D Jul 7 Aug 8 2017 E Sep 9 Oct O 2018 F Nov N Dec D September 2013 © Diodes Incorporated BSS84W Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -50 V Drain-Gate Voltage (Note 6) VDGR -50 V Gate-Source Voltage Continuous VGSS 20 V Drain Current (Note 6) Continuous ID -130 mA IDM -1 A Symbol Value Units PD 200 mW RθJA 625 °C/W TJ, TSTG -55 to +150 °C Pulsed Drain Current (Note 6) Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic (@TA = +25°C, unless otherwise specified.) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -50 -75 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS -1 -2 -100 µA µA nA VDS = -50V, VGS = 0V, TJ = +25°C VDS = -50V, VGS = 0V, TJ = +125°C VDS = -25V, VGS = 0V, TJ = +25°C Gate-Body Leakage IGSS 10 nA VGS = 20V, VDS = 0V Gate Threshold Voltage VGS(th) -0.8 -1.6 -2.0 V VDS = VGS, ID = -1mA Static Drain-Source On-Resistance RDS(ON) 6 10 Ω VGS = -5V, ID = -0.1A gFS 0.05 S VDS = -25V, ID = -0.1A Input Capacitance Ciss 45 pF Output Capacitance Coss 25 pF Reverse Transfer Capacitance Crss 12 pF Turn-On Delay Time tD(ON) 10 ns Turn-Off Delay Time tD(OFF) 18 ns OFF CHARACTERISTICS (Note 7) ON CHARACTERISTICS (Note 7) Forward Transconductance DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Notes: VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 7. Short duration pulse test used to minimize self-heating effect. BSS84W Document number: DS30205 Rev. 15 - 2 2 of 5 www.diodes.com September 2013 © Diodes Incorporated BSS84W -600 250 ID, DRAIN-SOURCE CURRENT (mA) PD, POWER DISSIPATION (mW) T A = 25° C VGS = -5V -500 200 -4.5V -400 150 -300 100 -3.5V -200 50 0 0 -100 -2.5V 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature -2 -3 -5 -4 VDS, DRAIN SOURCE (V) Fig. 2 Drain Source Current vs.Drain Source Voltage -1.0 -1 TA = -55° C -0.6 TA = 25° C TA = 125° C -0.4 -0.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () 10 -0.8 ID , DRAIN CURRENT (A) -3.0V -0.0 8 7 6 5 4 3 2 TA = 125°C 1 0 -1 -2 -3 -5 -4 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 3 Drain Current vs. Gate Source Voltage 0 9 15 TA = 25°C 0 -2 -4 -5 -3 VGS, GATE-SOURCE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage -1 25.0 12 RDS(ON), ON-RESISTANCE () RDS(ON), ON-RESISTANCE () VGS = -10V ID = -0.13A 9 6 3 20.0 VGS = -3.5V VGS = -3V VGS = -4.5V 15.0 VGS = -5V VGS = -4V VGS = -6V 10.0 5.0 VGS = -8V VGS = -10V 0 -50 0 -25 75 100 125 150 50 25 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance vs. Junction Temperature BSS84W Document number: DS30205 Rev. 15 - 2 0.0 -0.0 3 of 5 www.diodes.com -0.6 -0.8 -0.4 ID, DRAIN-CURRENT (A) Fig. 6 On-Resistance vs. Drain-Current -0.2 1.0 September 2013 © Diodes Incorporated BSS84W Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A SOT323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 0.95 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° All Dimensions in mm B C G H K M J L D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 C X BSS84W Document number: DS30205 Rev. 15 - 2 E 4 of 5 www.diodes.com September 2013 © Diodes Incorporated BSS84W IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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