ON NTMFS5C670NLT3G Single n-channel field effect transistor Datasheet

NTMFS5C670NL
Power MOSFET
60 V, 6.1 mW, 71 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(ON) MAX
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
Pulsed Drain Current
Value
Unit
VDSS
60
V
VGS
±20
V
ID
71
A
TC = 100°C
TC = 25°C
Steady
State
PD
ID
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 3.6 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
G (4)
A
17
S (1,2,3)
PD
W
3.6
N−CHANNEL MOSFET
1.8
IDM
440
A
TJ, Tstg
−55 to
+175
°C
IS
68
A
EAS
166
mJ
TL
°C
260
MARKING
DIAGRAM
D
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
D (5)
12
TA = 100°C
TA = 25°C, tp = 10 ms
71 A
8.8 mW @ 4.5 V
W
61
31
TA = 100°C
TA = 25°C
6.1 mW @ 10 V
60 V
50
TC = 100°C
TA = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Symbol
ID MAX
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
2.4
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
41
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C670L
A
Y
W
ZZ
S
S
S
G
D
5C670L
AYWZZ
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
January, 2016 − Rev. 1
1
Publication Order Number:
NTMFS5C670NL/D
NTMFS5C670NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
27
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 53 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−4.7
VGS = 10 V
ID = 35 A
5.1
6.1
VGS = 4.5 V
ID = 35 A
7.0
8.8
gFS
VDS = 15 V, ID = 35 A
V
mV/°C
82
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
1400
VGS = 0 V, f = 1 MHz, VDS = 25 V
640
pF
15
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 30 V; ID = 35 A
9.0
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 30 V; ID = 35 A
20
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
2.5
nC
4.5
VGS = 10 V, VDS = 30 V; ID = 35 A
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
2.0
3.1
td(ON)
11
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 30 V,
ID = 35 A, RG = 2.5 W
tf
60
ns
15
4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 35 A
TJ = 25°C
0.9
TJ = 125°C
0.8
tRR
ta
tb
1.2
V
34
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 35 A
QRR
17
ns
17
19
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5C670NL
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
120
140
4.5 V
6.5 V to
10 V
VDS = 5 V
120
ID, DRAIN CURRENT (A)
140
3.8 V
100
80
3.4 V
60
40
3.0 V
20
80
60
TJ = 25°C
40
20
2.6 V
0
TJ = 125°C
TJ = −55°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1.0
1.5
2.0
2.5
3.0
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
15
14
TJ = 25°C
ID = 35 A
13
12
11
10
9
8
7
6
5
3.5
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
100
4.5
5.5
6.5
7.5
8.5
9.5
VGS, GATE VOLTAGE (V)
4.0
10
TJ = 25°C
9
8
VGS = 4.5 V
7
6
VGS = 10 V
5
4
5
15
25
35
45
55
65
75
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
VGS = 10 V
ID = 35 A
TJ = 175°C
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
100000
2.0
1.6
1.4
1.2
1.0
10000
TJ = 125°C
1000
TJ = 85°C
100
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
175
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NTMFS5C670NL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
10000
CISS
1000
COSS
100
CRSS
10
VGS = 0 V
TJ = 25°C
f = 1 MHz
1
0
10
20
30
40
50
60
10
QT
9
8
7
6
5
QGD
4
QGS
3
VDS = 30 V
TJ = 25°C
ID = 35 A
2
1
0
0
2
4
6
8
10
12
14
16
18
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
t, TIME (ns)
100
IS, SOURCE CURRENT (A)
1000
tr
td(on)
td(off)
10
VGS = 4.5 V
VDS = 30 V
ID = 35 A
tf
1
10
TJ = 25°C
TJ = −55°C
1
1
10
0.3
100
0.6
0.7
0.8
0.9
1.0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
IPEAK, DRAIN CURRENT (A)
100
500 ms
10
10 ms
0.1
0.1
0.5
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
TC = 25°C
VGS ≤ 10 V
Single Pulse
1
0.4
RG, GATE RESISTANCE (W)
1000
ID, DRAIN CURRENT (A)
TJ = 125°C
RDS(on) Limit
Thermal Limit
Package Limit
1
1 ms
10
TJ = 25°C
TJ = 100°C
1
0.1
10
100
1E−5
1E−4
1E−3
1E−2
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMFS5C670NL
100
R(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS5C670NLT1G
5C670L
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS5C670NLT3G
5C670L
DFN5
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS5C670NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2X
0.20 C
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10 C
A
RECOMMENDED
SOLDERING FOOTPRINT*
0.10 C
SIDE VIEW
0.10
8X b
C A B
0.05
c
2X
DETAIL A
0.495
4.560
2X
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.30
5.15
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.530
e/2
e
L
1
3.200
4
4.530
K
E2
1.330
2X
PIN 5
(EXPOSED PAD)
L1
M
0.905
1
0.965
G
4X
D2
1.000
4X 0.750
BOTTOM VIEW
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
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and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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For additional information, please contact your local
Sales Representative
NTMFS5C670NL/D
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