AP4511GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D1/D2
RDS(ON)
30mΩ
ID
P-CH BVDSS
RDS(ON)
TO-252-4L
ID
15A
-35V
48mΩ
-12A
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant
S1
G1
S2
G2
Description
35V
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
D1
D2
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
Units
P-channel
VDS
Drain-Source Voltage
35
-35
V
VGS
Gate-Source Voltage
+20
+20
V
ID@TC=25℃
Continuous Drain Current
15
-12
A
ID@TC=100℃
Continuous Drain Current
9
-7
A
50
-50
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
10.4
W
Linear Derating Factor
0.083
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
12
℃/W
110
℃/W
1
201105315
AP4511GH-HF
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
Min.
Typ.
Max. Units
35
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=8A
-
-
30
mΩ
VGS=4.5V, ID=6A
-
-
40
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
13
-
S
IDSS
Drain-Source Leakage Current
VDS=35V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=28V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=8A
-
11
18
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=28V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
2
td(on)
Turn-on Delay Time
VDS=18V
-
12
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=18Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
830
1330
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Ω
Min.
Typ.
IS=8A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
nC
2
AP4511GH-HF
P-CH Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient
RDS(ON)
Min.
Typ.
-35
-
-
V
Reference to 25℃,ID=-1mA
-
-0.03
-
V/℃
VGS=-10V, ID=-6A
-
-
48
mΩ
VGS=-4.5V, ID=-4A
-
-
70
mΩ
VGS=0V, ID=-250uA
2
Static Drain-Source On-Resistance
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=-35V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=125 C)
VDS=-28V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-6A
-
10
19
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-28V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6
-
nC
VDS=-18V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
26
-
ns
tf
Fall Time
RD=18Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
690
1100
pF
Coss
Output Capacitance
VDS=-25V
-
165
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5
7.5
Ω
Min.
Typ.
IS=-6A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-6A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
12
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4511GH-HF
N-Channel
50
50
T C = 25 o C
40
ID , Drain Current (A)
ID , Drain Current (A)
40
30
4.5V
20
V G =3.0V
10
30
5.0V
20
4.5V
V G =3.0V
10
0
0
0
1
2
3
4
5
0
V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
45
ID=8A
V G =10V
ID=6A
40
1.4
T C =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ )
10V
7.0V
T C = 150 o C
10V
7.0V
5.0V
35
30
25
1.2
1.0
0.8
20
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
Normalized VGS(th) (V)
6
IS(A)
4
o
o
T j =150 C
T j =25 C
2
0
1.1
0.8
0.5
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4511GH-HF
N-Channel
f=1.0MHz
1000
12
8
C (pF)
VGS , Gate to Source Voltage (V)
C iss
ID=8A
V DS = 28V
10
6
C oss
C rss
100
4
2
10
0
0
5
10
15
20
1
25
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
100us
ID (A)
10
1ms
1
o
T C =25 C
Single Pulse
10ms
100ms
DC
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
VG
V DS =5V
ID , Drain Current (A)
30
o
T j =25 C
QG
T j =150 o C
4.5V
20
QGS
QGD
10
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
AP4511GH-HF
P-Channel
50
50
40
-ID , Drain Current (A)
-ID , Drain Current (A)
40
-10V
-7.0V
o
T C = 150 C
-10V
-7.0V
o
T C = 25 C
-5.0V
30
-4.5V
20
-5.0V
30
-4.5V
20
V G = - 3.0V
10
V G = - 3.0V
10
0
0
0
1
2
3
4
5
0
Fig 1. Typical Output Characteristics
2
3
4
5
Fig 2. Typical Output Characteristics
1.6
90
I D = -6 A
V G = - 10V
ID=-4A
1.4
Normalized RDS(ON)
T C =25 o C
RDS(ON) (mΩ)
1
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
70
50
1.2
1.0
0.8
30
0.6
2
4
6
8
10
-50
0
50
100
150
o
-V GS ,Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
6
Normalized -VGS(th) (V)
5
-IS(A)
4
T j =150 o C
T j =25 o C
3
2
1.2
0.8
1
0
0.4
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4511GH-HF
P-Channel
f=1.0MHz
1000
I D = -6 A
V DS = - 28V
10
C iss
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
4
C oss
2
C rss
0
100
0
5
10
15
20
25
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
-ID (A)
10
1ms
1
10ms
100ms
DC
o
T C =25 C
Single Pulse
0.1
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
20
QG
T j =150 o C
-4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7