IRFH3707PbF-1 HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 30 V 12.4 mΩ 5.4 nC 12 A S S S D D G D D 3mm x 3mm PQFN Applications l l l l Synchronous Buck Converter for Computer Processor Power Isolated DC to DC Converters for Network and Telecom Buck Converters for Set-Top Boxes System/load switch Features Industry-standard pinout PQFN 3mm x 3mm Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Base Part Number Package Type IRFH3707PbF-1 PQFN 3mm x 3mm ⇒ Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH3707TRPbF-1 Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.4 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 29 ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current 18 96 PD @TA = 25°C Power Dissipation 2.8 PD @TA = 70°C Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range g g Units V 12 c A W 1.8 g 0.02 -55 to + 150 W/°C °C Thermal Resistance f Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient RθJA Junction-to-Ambient (t<10s) gh h Typ. Max. ––– 7.5 ––– 45 ––– 31 Units °C/W Notes through are on page 10 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 6, 2014 IRFH3707PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) Min. Typ. Max. Units V Conditions Drain-to-Source Breakdown Voltage 30 ––– ––– VGS = 0V, ID = 250μA Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.02 9.4 VGS(th) Gate Threshold Voltage ––– 1.35 14.5 1.8 ΔVGS(th) Gate Threshold Voltage Coefficient ––– -6.2 V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 12A mΩ 17.9 VGS = 4.5V, ID = 9.4A 2.35 V VDS = VGS, ID = 25μA ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.0 150 μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 nA VGS = 20V VGS = -20V gfs Qg Forward Transconductance Total Gate Charge 17 ––– ––– 5.4 ––– 8.1 S VDS = 15V, ID = 9.4A ––– 12.4 e e Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.1 ––– Qgs2 Qgd Post-Vth Gate-to-Source Charge Gate-to-Drain Charge ––– ––– 0.7 2.2 ––– ––– Qgodr Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 1.5 2.9 ––– ––– Qoss Output Charge ––– 3.8 ––– nC RG td(on) Gate Resistance Turn-On Delay Time ––– ––– 2.0 9.0 ––– ––– Ω tr td(off) Rise Time Turn-Off Delay Time ––– ––– 11 9.9 ––– ––– tf Ciss Fall Time Input Capacitance ––– ––– 5.6 755 ––– ––– Coss Crss Output Capacitance Reverse Transfer Capacitance ––– ––– 171 83 ––– ––– VDS = 15V nC VGS = 4.5V ID = 9.4A See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ns ID = 9.4A RG=1.3Ω See Fig.15 VGS = 0V pF VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. ––– Max. 13 Units mJ ––– 9.4 A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr (Body Diode) Diode Forward Voltage Reverse Recovery Time Qrr ton Reverse Recovery Charge Forward Turn-On Time c 2 www.irf.com © 2014 International Rectifier Min. Typ. Max. Units ––– ––– Conditions MOSFET symbol 3.5 D A showing the integral reverse p-n junction diode. TJ = 25°C, IS = 9.4A, VGS = 0V TJ = 25°C, IF = 9.4A, VDD = 15V di/dt = 200A/μs ––– ––– 96 ––– ––– ––– 20 1.0 30 V ns ––– 27 41 nC G S e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Submit Datasheet Feedback June 6, 2014 IRFH3707PbF-1 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V 100 10 1 2.7V BOTTOM 10 2.7V ≤60μs PULSE WIDTH Tj = 25°C ≤60μs PULSE WIDTH 1 10 0.1 100 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 10 T J = 25°C TJ = 150°C 1 VDS = 15V ≤60μs PULSE WIDTH 0.1 1.6 ID = 12A VGS = 10V 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 Tj = 150°C 1 0.1 0.1 VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V www.irf.com © 2014 International Rectifier 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback June 6, 2014 IRFH3707PbF-1 10000 14.0 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C, Capacitance (pF) C oss = C ds + C gd 1000 Ciss Coss Crss 100 ID= 9.4A 12.0 VDS= 24V VDS= 15V 10.0 8.0 6.0 4.0 2.0 0.0 10 1 10 0 100 2 4 6 8 10 12 14 16 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100 T = 150°C J 10 TJ = 25°C 1 100μsec 10 1msec 1 Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10msec T A = 25°C www.irf.com © 2014 International Rectifier 1.6 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback June 6, 2014 IRFH3707PbF-1 12 VGS(th) , Gate Threshold Voltage (V) 2.5 ID, Drain Current (A) 10 8 6 4 2 0 2.0 ID = 25μA 1.5 1.0 0.5 25 50 75 100 125 150 -75 -50 -25 T A , Ambient Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10. Threshold Voltage Vs. Temperature Thermal Response ( Z thJA ) °C/W 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 6, 2014 35 60 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH3707PbF-1 ID = 12A 30 25 20 T J = 125°C 15 10 T J = 25°C 5 2 4 6 8 10 12 14 16 18 20 ID 2.95A 3.63A BOTTOM 9.40A TOP 50 40 30 20 10 0 25 50 75 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage V DS V GS VDS + V - DD IAS 20V 150 RD D.U.T. RG DRIVER D.U.T RG 125 Fig 13. Maximum Avalanche Energy vs. Drain Current 15V L 100 Starting T J , Junction Temperature (°C) + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 A 0.01Ω tp Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit VDS 90% 10% VGS td(on) I AS Fig 14b. Unclamped Inductive Waveforms 6 www.irf.com © 2014 International Rectifier tr td(off) tf Fig 15b. Switching Time Waveforms Submit Datasheet Feedback June 6, 2014 IRFH3707PbF-1 D.U.T Driver Gate Drive P.W. + - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2μF .3μF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit 7 www.irf.com © 2014 International Rectifier Fig 18. Gate Charge Waveform Submit Datasheet Feedback June 6, 2014 IRFH3707PbF-1 PQFN Package Details Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 6, 2014 IRFH3707PbF-1 PQFN Part Marking PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 6, 2014 IRFH3707PbF-1 † Qualification information Industrial Qualification level (per JEDE C JE S D47F Moisture Sensitivity Level PQFN 3mm x 3mm RoHS compliant †† guidelines) MS L1 †† (per JEDE C J-S T D-020D ) Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.297mH, RG = 25Ω, IAS = 9.4A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rthjc is guaranteed by design. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Refer to application note #AN-994. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 6, 2014