MBR10200L(F)CT HD TO58 TO-220 Plastic-Encapsulate Diodes Schottky Rectifier Features ●Io 10A ITO- 220 AB TO- 220 AB 200V ●VRRM ●High surge current capability ●Low Vf Applications ● Rectifier 1 Marking 1 2 ● MBR10200L(F)CT Item 3 PIN 1 PIN 2 PIN 3 CASE 3 Symbol Unit Repetitive Peak Reverse Voltage VRRM V Average Rectified Output Current Io A 60HZ Half-sine wave, Resistance load, Tc(Fig.1) 10.0 IFSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 120 TJ ℃ -55~+150 TSTG ℃ -55 ~ +150 Surge(Non-repetitive)Forward Current Junction Temperature Storage Temperature Test Conditions 2 MBR10200(F)LCT 200 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Peak Forward Voltage Peak Reverse Current Thermal Resistance(Typical) Symbol Unit VF V IRRM1 IRRM2 RθJ-C mA ℃/W Test Condition IF =5.0A VRM=VRRM MBR10200(F)LCT 0.90(MAX) 0.85(TYP) Ta =25℃ 0.1 Ta =125℃ 1.5 Between junction and case 1) 2.0 Notes: Thermal resistance from junction to case per leg with heat-sink size of 2"×3"×0.25" AL-plate High Diode Semiconductor 1 Typical Characteristics FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) IO(A) FIG.1: FORWARD CURRENT DERATING CURVE 12 10 210 180 8.3ms Single Half Sine Wave JEDEC Method 150 8 120 6 90 4 60 2 30 0 50 70 90 110 130 150 Tc(℃) 0 1 100 Number of Cycles FIG3:Instantaneous Forward Voltage FIG.4：TYPICAL REVERSE CHARACTERISTICS 60 IR(mA) IF(A) 10 40 10 20 Tj=125℃ 1.0 10 5.0 0.1 1.0 Tj=75℃ 0.01 0.5 0.2 0.1 Ta=25℃ 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VF(V) 0.001 Tj=25℃ 0 20 40 High Diode Semiconductor 60 80 100 Voltage(%) 2 TO- 220 TO- 220 AB ITO- 220 AB JSHD JSHD High Diode Semiconductor 3 TO- 220 P acking Information Part Number tube inner box outer container Quantity 50 pieces 1000 pieces 5000 pieces Size（mm） 530*33*7 558*150*40 570*235*170 High Diode Semiconductor 4