IRF IRHMJ54160 Radiation hardened power mosfet surface mount (to-254aa tabless) Datasheet

PD-96916
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (TO-254AA Tabless)
IRHMJ57160
100V, N-CHANNEL
5
TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHMJ57160 100K Rads (Si)
RDS(on)
0.018Ω
ID
35A*
IRHMJ53160
300K Rads (Si)
0.018Ω
35A*
IRHMJ54160
600K Rads (Si)
0.018Ω
35A*
0.019Ω
35A*
IRHMJ58160 1000K Rads (Si)
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TO-254AA Tabless
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermatically Sealed
Electically Isolated
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Units
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
35*
35*
140
250
2.0
±20
500
35
25
3.4
-55 to 150
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.7 (Typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
* Current is limited by package
For footnotes refer to the last page
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1
12/24/04
IRHMJ57160
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
100
—
—
V
V GS = 0V, ID = 1.0mA
—
0.013
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.018
Ω
VGS = 12V, ID = 35A Ã
2.0
42
—
—
—
—
—
—
4.0
—
10
25
V
S( )
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
160
45
65
35
75
75
35
—
nA
nC
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 35A Ã
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 35A
VDS = 50V
ns
VDD = 50V, ID = 35A
VGS =12V, RG = 2.35Ω
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Ω
BVDSS
µA
nH
Test Conditions
Measured from Drain Lead (6mm/0.25in
from package) to Source Lead(6mm/0.25in
from package) with Source wires internally
bonded from Source Pad to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5620
1583
50
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
35*
140
1.2
270
1.9
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 35A, VGS = 0V Ã
Tj = 25°C, IF = 35A, di/dt ≤100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.50
0.21 —
—
48
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHMJ57160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Min
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (TO-254)
Diode Forward Voltage Ã
Max
Min
Test Conditions
Max
100
2.0
—
—
—
—
—
4.0
100
-100
10
0.013
100
1.5
—
—
—
—
—
4.0
100
-100
25
0.014
µA
Ω
—
0.018
—
0.019
Ω
VGS = 12V, ID =35A
—
1.2
1.2
V
VGS = 0V, IS = 35A
—
V
nA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 80V, VGS =0V
VGS = 12V, ID =35A
1. Part numbers IRHMJ57160, IRHMJ53160 and IRHMJ54160
2. Part number IRHMJ58160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
MeV/(mg/cm2))
36.7
59.8
82.3
VDS (V)
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
39.5
100
100
100
100
100
32.5
100
100
100
35
25
28.4
100
100
80
25
—
Energy
(MeV)
309
341
350
120
VGS
100
80
Br
60
I
40
Au
20
0
0
-5
-10
-15
-20
VDS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMJ57160
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
100
5.0V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
5.0V
10
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
100
V DS = 50V
15
20µs PULSE WIDTH
7
8
9
10
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
1000
6
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
TOP
ID = 35A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
10000
20
6000
Ciss
4000
Coss
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
C, Capacitance (pF)
IRHMJ57160
2000
ID = 35A
VDS = 80V
VDS = 50V
VDS = 20V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
1
10
0
100
0
30
90
120
150
180
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
60
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
100
100
TJ = 150 ° C
10
TJ = 25 ° C
1
V GS = 0 V
0.1
0.0
0.5
1.0
1.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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OPERATION IN THIS AREA
LIMITED BY R DS(on)
2.0
10µs
100µs
10
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
10ms
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHMJ57160
Pre-Irradiation
100
RD
VDS
LIMITED BY PACKAGE
VGS
ID , Drain Current (A)
80
D.U.T.
RG
60
+
-V DD
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
VDS
20
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.01
0.001
0.00001
0.20
0.10
0.05
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHMJ57160
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
TOP
1000
DRIVER
+
- VDD
0.01Ω
tp
EAS , Single Pulse Avalanche Energy (mJ)
1200
Fig 12a. Unclamped Inductive Test Circuit
A
BOTTOM
ID
16A
22A
35A
800
600
400
200
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
V(BR)DSS
150
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHMJ57160
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 0.82 mH
Peak IL = 35A, VGS = 12V
 ISD ≤ 35A, di/dt ≤ 330A/µs,
VDD ≤ 100V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
80 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-254AA Tabless
NOT ES :
1.
2.
3.
4.
DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
CONT ROLLING DIMENS ION: INCH.
T HIS OUT LINE IS A MODIFIED T O-254AA JEDEC OUT LINE.
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2004
8
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