DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary V(BR)DSS Features and Benefits RDS(ON) ID TA = +25°C 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA NEW PRODUCT 60V N-Channel MOSFET Low On-Resistance Low Gate-Threshold Voltage Low-Input Capacitance Fast Switching Speed Small-Surface Mount Package ESD Protected Gate, 1.2kV HBM Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Case: X1-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Terminals: Finish – NiPdAu over Copper Leadframe; Battery Operated Systems and Solid-State Relays Solderable per MIL-STD-202, Method 208 e4 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Weight: 0.001 grams (Approximate) Drain X1-DFN1006-3 Body Diode Gate Gate Protection Diode ESD PROTECTED TO 1.2kV Bottom View D Source Equivalent Circuit S G Top View Pin Configuration Ordering Information (Note 4) Part Number DMN65D8LFB-7 DMN65D8LFB-7B Notes: Case X1-DFN1006-3 X1-DFN1006-3 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. DMN65D8LFB Document number: DS35545 Rev. 4 - 2 1 of 6 www.diodes.com May 2015 © Diodes Incorporated DMN65D8LFB Marking Information From date code 1527 (YYWW), this changes to: X1 X1 Top View Bar Denotes Gate and Source Side Top View Dot Denotes Drain Side X1 X1 X1 X1 X1 X1 NEW PRODUCT DMN65D8LFB-7 X1 Top View Bar Denotes Gate and Source Side X1 = Part Marking Code DMN65D8LFB Document number: DS35545 Rev. 4 - 2 X1 X1 X1 DMN65D8LFB-7B 2 of 6 www.diodes.com May 2015 © Diodes Incorporated DMN65D8LFB Maximum Ratings Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value 60 20 260 210 ID 400 310 Units V V mA mA Thermal Characteristics Characteristic Power Dissipation, @TA = +25°C (Note 4) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 4) Power Dissipation, @TA = +25°C (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Electrical Characteristics Symbol PD RJA PD RJSA TJ, TSTG Value 430 290 840 147 -55 to +150 Units mW °C/W mW °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 - - 0.1 10 V µA µA VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) 1.2 - V Static Drain-Source On-Resistance RDS (ON) - - |Yfs| VSD 80 - 320 0.7 2.0 3.0 4.0 1.2 mS V VDS = VGS, ID = 250µA VGS = 10V, ID = 0.115A VGS = 5V, ID = 0.1115A VDS = 10V, ID = 0.115A VGS = 0V, IS = 0.115A Ciss Coss Crss tD(on) tr tD(off) tf - 25 4.7 2.5 3.27 3.15 12.025 6.29 - pF pF pF ns ns ns ns Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Ω Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 30V, VGEN = 10V, RGEN = 25Ω,ID = 0.115A 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single-sided. 5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2oz. Copper, single-sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMN65D8LFB Document number: DS35545 Rev. 4 - 2 3 of 6 www.diodes.com May 2015 © Diodes Incorporated DMN65D8LFB 1 0.6 VGS=10V 0.5 ID, DRAIN CURRENT (A) VGS=5.0V VGS=4.5V 0.3 VGS=2.5V 0.2 TA=25 C TA=-55C TA=85C 0.1 0.1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 V DS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristics 0.01 0 5 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE Fig. 2 Typical Transfer Characteristics 4 2.4 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 0 4.5 4 3.5 3 VGS=5V 2.5 VGS=10V 2 1.5 1 0.5 0 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Charge 2.2 VGS=10V, ID=115mA 2 1.8 1.6 VGS=5V, ID=115mA 1.4 1.2 1 0.8 0.6 0.4 -50 0.6 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 4 On-Resistance Variation with Temperature 2 50 1.8 45 CT, JUNCTION CAPACITANCE (pF) f=1MHz VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT TA=150C VGS =3.0V VGS=4.0V 0.4 TA=125 C VDS= 5.0V VGS=3.5V 1.6 1.4 ID=1mA 1.2 ID=250µA 1 0.8 0.6 0.4 30 CISS 25 20 15 10 COSS CRSS 0 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature Document number: DS35545 Rev. 4 - 2 35 5 0.2 DMN65D8LFB 40 4 of 6 www.diodes.com 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE Fig. 6 Typical Junction Capacitance 25 May 2015 © Diodes Incorporated DMN65D8LFB 1 TA=125°C TA=25°C IS, SOURCE CURRENT (A) NEW PRODUCT TA=150°C 0.1 TA=85°C T A=-55°C 0.01 0.001 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diode Forward Voltage vs. Current 1.2 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A1 Seating Plane D b Pin #1 ID e E b2 X1-DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm z L3 L2 L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions C G1 G2 X X1 Y Y1 Y1 G2 X Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 G1 X1 DMN65D8LFB Document number: DS35545 Rev. 4 - 2 5 of 6 www.diodes.com May 2015 © Diodes Incorporated DMN65D8LFB IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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